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    FDI045N10A_F102 Search Results

    FDI045N10A_F102 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    98414-F10-20ULF
    		Amphenol Communications Solutions Header, Through Hole, Double row, 20, 2mm (0.079in), Vertical PDF
    G823F1022TEU
    		Amphenol Communications Solutions Socket 1.2mm Pitch, CRIPMING TYPE, 1x2PIN, PA66, HF, BLACK PDF
    REF102CU
    		Texas Instruments 2.5-ppm/°C drift, 10-V precision voltage reference 8-SOIC -25 to 85 Visit Texas Instruments Buy
    REF102CU/2K5
    		Texas Instruments 2.5-ppm/°C drift, 10-V precision voltage reference 8-SOIC -25 to 85 Visit Texas Instruments Buy
    REF102AUG4
    		Texas Instruments 2.5-ppm/°C drift, 10-V precision voltage reference 8-SOIC Visit Texas Instruments Buy

    FDI045N10A_F102 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDI045N10A_F102
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 120A I2PAK-3 Original PDF 10
    FDI045N10A-F102
    		ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 120A I2PAK-3 Original PDF 817.88KB
    SF Impression Pixel

    FDI045N10A_F102 Price and Stock

    onsemi

    onsemi FDI045N10A-F102

    MOSFET N-CH 100V 120A I2PAK
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    FDI045N10A_F102 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MOSFET 50V 100A TO-220

    Abstract: MOSFET 50V 100A FDP045N10A FDI045N10A
    Contextual Info: FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5mΩ Features Description • RDS on = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been


    Original     		FDP045N10A FDI045N10A MOSFET 50V 100A TO-220 MOSFET 50V 100A PDF

    FDP045N10A

    Abstract: FDI045N10A_F102
    Contextual Info: FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100 V, 164 A, 4.5 mΩ Features Description • RDS on = 3.8 mΩ ( Typ.)@ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has


    Original     		FDP045N10A FDI045N10A FDI045N10A_F102 PDF

    Contextual Info: FDP045N10A / FDI045N10A N-Channel PowerTrench MOSFET 100 V, 164 A, 4.5 mΩ Features Description • RDS on = 3.8 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has


    Original     		FDP045N10A FDI045N10A PDF