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    FDI045N10A Search Results

    FDI045N10A Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDI045N10A
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 120A I2PAK-3 Original PDF 10
    FDI045N10A_F102
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 120A I2PAK-3 Original PDF 10
    FDI045N10A-F102
    		ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 120A I2PAK-3 Original PDF 817.88KB
    SF Impression Pixel

    FDI045N10A Price and Stock

    onsemi

    onsemi FDI045N10A-F102

    MOSFET N-CH 100V 120A I2PAK
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    DigiKey FDI045N10A-F102 Tube 252 1
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    Avnet Americas FDI045N10A-F102 Tube 1,000 15 Weeks 50
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    Mouser Electronics FDI045N10A-F102 4,000
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    Newark FDI045N10A-F102 Bulk 1,000
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    Quest Components FDI045N10A-F102 57
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    TME FDI045N10A-F102 1
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    Richardson RFPD FDI045N10A-F102 1,000
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    onsemi FDI045N10A

    MOSFET N-CH 100V 120A I2PAK
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    DigiKey FDI045N10A Tube 50
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    FDI045N10A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDP045N10A / FDI045N10A N-Channel PowerTrench MOSFET 100 V, 164 A, 4.5 mΩ Features Description • RDS on = 3.8 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has


    Original     		FDP045N10A FDI045N10A PDF

    MOSFET 50V 100A TO-220

    Abstract: MOSFET 50V 100A FDP045N10A FDI045N10A
    Contextual Info: FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5mΩ Features Description • RDS on = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been


    Original     		FDP045N10A FDI045N10A MOSFET 50V 100A TO-220 MOSFET 50V 100A PDF

    FDP045N10A

    Abstract: FDI045N10A_F102
    Contextual Info: FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100 V, 164 A, 4.5 mΩ Features Description • RDS on = 3.8 mΩ ( Typ.)@ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has


    Original     		FDP045N10A FDI045N10A FDI045N10A_F102 PDF