FDG6301 Search Results

Contextual Info: November 1998 FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to

ultra FAST DMOS FET Switches

Abstract: FDG6301N SC70-6
Contextual Info: FDG6301N_F085 Dual N-Channel, Digital FET General Description Features 25 V, 0.22 A continuous, 0.65 A peak. RDS ON = 4 Ω @ VGS= 4.5 V, RDS(ON) = 5 Ω @ VGS= 2.7 V. These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's

F63TNR

Abstract: FDG6301N FDG6302P SC70-6 CBVK741B019
Contextual Info: July 1999 FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to

ZENER SINGLE COLOR CODE

Abstract: CBVK741B019 F63TNR FDG6301N FDG6302P SC70-6
Contextual Info: July 1999 FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to

Contextual Info: F A IR C H IL D July 1999 SEM IC O N D U C TO R tm FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This

Marking Code m sc70-6

Abstract: jedec SC-70-6 package SC70-6 SPI SC70-6 Marking Code m sc70-6 25 fdg6301n F63TNR bs sc70 Marking Code m sc70-6 .25 bb sc70-6
Contextual Info: July 1999 F = / \ IR G H Il_ D S E M IC O N D U C T O R tm FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This

FDG6301N

Abstract: SC70-6
Contextual Info: July 1999 FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to

Contextual Info: July 1999 FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to

A9 SOT-23

Abstract: zener sot-23 a9 CBVK741B019 F63TNR FDG6301N SC70-6 land pattern sc70-6
Contextual Info: November 1998 FAIRCHILD S E M IC O N D U C T O R tm FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

Contextual Info: FDG6301N_F085 Dual N-Channel, Digital FET General Description Features 25 V, 0.22 A continuous, 0.65 A peak. RDS ON = 4 Ω @ VGS= 4.5 V, RDS(ON) = 5 Ω @ VGS= 2.7 V. These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's

Common rail piezo injector driver

Abstract: Common rail injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector driver Piezo Direct Injection SCHEMATIC IGNITION WITH IGBTS FAN7085 DRIVER injector Common rail FQD3P50TM FQD12N201
Contextual Info: AUTOMOTIVE SOLUTIONS TO MAXIMIZE FUEL EFFICIENCY & REDUCE CO2 EMISSIONS Saving our world, 1mW at a time www.fairchildsemi.com INTRODUCTION Fairchild Semiconductor Automotive Solutions Whether specifying an intelligent ignition control for high performance engine management systems or

OPA2333-HT

Abstract: SBOS483C OPA2333 OPA2333SJD Amplifier k thermocouple texas
Contextual Info: OPA2333-HT www.ti.com SBOS483C – JULY 2009 – REVISED DECEMBER 2010 1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIER ZERO-DRIFT SERIES Check for Samples: OPA2333-HT FEATURES 1 • • • • • • Low Offset Voltage: 26 mV Max 0.01-Hz to 10-Hz Noise: 1.5 mVPP

Contextual Info: BurrĆBrown Products from Texas Instruments OPA333 OPA2333 SBOS351C – MARCH 2006 – REVISED MAY 2007 1.8V, microPOWER CMOS OPERATIONAL AMPLIFIERS Zerø-Drift Series FEATURES • • • • • • • • DESCRIPTION LOW OFFSET VOLTAGE: 10 V max ZERO DRIFT: 0.05μV/°C (max)

Contextual Info: OPA369 OPA2369 BurrĆBrown Products from Texas Instruments SBOS414A – AUGUST 2007 – REVISED SEPTEMBER 2007 1.8V, 1 A max, Zerø-Crossover RAIL-TO-RAIL I/O OPERATIONAL AMPLIFIER FEATURES DESCRIPTION 1 • • • • • • 2 ZERØ-CROSSOVER LOW POWER: 1μA max

02333Q

Abstract: INA321A OPA2333 OPA2333AQDRQ1 REF3140 SBOS463A
Contextual Info: OPA2333-Q1 www.ti.com SBOS463A – DECEMBER 2008 – REVISED JUNE 2010 1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIER ZERO-DRIFT SERIES Check for Samples: OPA2333-Q1 FEATURES 1 • • • • • • • D OR DGK PACKAGE TOP VIEW Qualified for Automotive Applications

Backing Up Epson Toyocom Real-Time Clock Chips

Contextual Info: AN-1006 Application Note Backing Up Epson Toyocom Real-Time Clock Chips A Demonstration Tool for Cymbet EnerChip™ Solid State Thin Film Rechargeable Batteries is fully charged. At full charge, the current is in the sub-nanoamps. A simple but effective technique prevents the battery from discharging

thermistor cl-30

Contextual Info: OPA2333-HT www.ti.com SBOS483C – JULY 2009 – REVISED DECEMBER 2010 1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIER ZERO-DRIFT SERIES Check for Samples: OPA2333-HT FEATURES 1 • • • • • • Low Offset Voltage: 26 mV Max 0.01-Hz to 10-Hz Noise: 1.5 mVPP

smd diode Mbr0540

Abstract: CMD17-21VGC/TR8 4301 SMD TRANSISTOR SG 21 DIODE SMD smd transistor 2p data SSQ-105-02-T-D-RA Caplugs VC-234-8 Oscilloscope USB 100mhz Schematic APXA160ARA331MJC
Contextual Info: Application Note 1493 ZL6100EVAL1Z Evaluation Board The ZL6100 is an integrated mixed-signal power conversion and management IC that combines an efficient step-down DC/DC converter with key power and thermal management functions in a single package. The ZL6100 incorporates current sharing and adaptive

Inventec VAIL 2.0

Abstract: PC9603 Inventec INVENTEC davos INVENTEC DAVOS 3.0 GST5009 C5761 Compaq P58 VSS28 CN5-001
Contextual Info: DAVOS-DF PV-1-BUILD 2004.11.04 EE DATE DATE POWER DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : DAVOS-DF SIZE CODE A3 CS SHEET DOC. NUMBER REV PC9603 1 A01 OF 65 TABLE OF CONTENTS

RT9713

Abstract: C6091 C6093 R61531 c6090 C6085 c6092 inventec vail 1.0 Inventec 070912FR015S200ZU
Contextual Info: VAIL SI2-BUILD-FINAL 2004.08.31 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : VAIL1.0 SIZE CODE A3 CS SHEET DOC. NUMBER REV Model_No 1 OF AX2 67 TABLE OF CONTENTS

c5586

Abstract: c5679 C5694 c5487 47N253 c5664 c5598 c5717 C5488 ez 4r 823
Contextual Info: Approvals Revisions REV ECN NO. Description Of Change DATE DFTG. ENGR. REL. TABLE OF CONTENTS PAGE 4 - CLOCK GENERATOR 5-7 - BANIAS PROCESSOR 8-10 - ODEM 11-14 - DDR 15-18 - ATI_M10_P 19-20 - VGA DDR 21 -LCD&TV CONNECTOR INTERFACE 22- CRT INTERFACE 23-25- ICH4-M

C5478

Abstract: dd5011 C5088 c5468 c5470 c5388 C5480 c5344 C5386 Inventec
Contextual Info: Approvals Revisions REV ECN NO. Description Of Change DATE DFTG. ENGR. REL. TABLE OF CONTENTS PAGE 4 - CLOCK GENERATOR 5-7 - BANIAS PROCESSOR 8-12 - MONTARA-GM 13-16 - DDR 17 - TV ENCODER 18 - CRT 19 - LVDS 21-23- ICH4-M 24 - HDD CONNECTOR 25 - CD-ROM CONNECTOR

12c675

Abstract: 8541P Inventec tpa6017 sc1470I LPC47N249 *8541p L1019 R502 3443 070435FR015
Contextual Info: Approvals Revisions REV ECN NO. Description Of Change DATE DFTG. ENGR. REL. TABLE OF CONTENTS PAGE 4 - CLOCK GENERATOR 5-7 - BANIAS PROCESSOR 8-10 - ODEM 11-14 - DDR 15-18 - ATI_M10_P 19-20 - VGA DDR 21 -LCD INTERFACE 22-24- ICH4-M 25 - HDD CONNECTOR 26 - CD-ROM CONNECTOR

Contextual Info: BurrĆBrown Products from Texas Instruments OPA333 OPA2333 SBOS351C – MARCH 2006 – REVISED MAY 2007 1.8V, microPOWER CMOS OPERATIONAL AMPLIFIERS Zerø-Drift Series FEATURES • • • • • • • • DESCRIPTION LOW OFFSET VOLTAGE: 10 V max ZERO DRIFT: 0.05μV/°C (max)