FDFS Search Results

F63TNR

Abstract: FDFS2P102A soic-8 33a
Contextual Info: FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

FDFS2P753Z

Contextual Info: FDFS2P753Z tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description „ Max rDS on = 115mΩ at VGS = -10V, ID = -3.0A The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low

FDFS2P106A

Contextual Info: FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P106A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

max1546

Abstract: compal foxconn nec c1106 transistors c945 p 331 transistor R913 capacitor c250 r200 hp desktop pc schematic PCI 1520 smd transistor M26 sot23
Contextual Info: A B C D E Digitally signed by fdsf DN: cn=fdsf, o=fsdfsd, ou=ffsdf, email=fdfsd@fsdff, c=US Date: 2010.02.15 18:43:09 +07'00' LA-2411 1 1 Compal confidential 2 2 www.kythuatvitinh.com Schematics Document DT TRANSPORT or Prescott uFCPGA with ATI-RC300M+SB200 core logic

0.1U_0402_16V4Z

Abstract: mda48 aos3401 BLM18PG121SN1D Compal Electronics M54-p r2561 BSS84S compal efl50 ls
Contextual Info: 5 4 3 2 1 Digitally signed by fdsf DN: cn=fdsf, o=fsdfsd, ou=ffsdf, email=fdfsd@fsdff, c=US Date: 2010.02.15 18:47:35 +07'00' D C D Mini EFL50 ATI VGA/B M52-P C www.kythuatvitinh.com Revision 1.0 B B A A Compal Secret Data Security Classification Issued Date

RTM865T-433

Abstract: alc268 pci7412 ISL6262 BCM4401E PM_DPRSLPVR rtm865t 8768L ICH7M 1D05V
Contextual Info: Huron Clock Block Diagram Digitally signed by fdsf DN: cn=fdsf, o=fsdfsd, ou=ffsdf, email=fdfsd@fsdff, c=US Date: 2010.02.15 09:50:42 +07'00' Crystal 14.318MHz X1/X2 Crystal 32.768KHz KBC WPC 8768L FWH PCLK_KBC 33 MHz PCLK_FHW PCI_2/REQ_SEL 1394Controller

fdfs6n303

Abstract: MOSFET with Schottky Diode schottky diode mosfet dc to dc boost converter low drop voltage
Contextual Info: August 1999 F/\IRCHII_0 iM IC D N D U C T O R tm FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology combines a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The

FDFS2P753Z

Abstract: 30A 45V SCHOTTKY BARRIER RECTIFIER
Contextual Info: FDFS2P753Z tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description „ Max rDS on = 115mΩ at VGS = -10V, ID = -3.0A The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low

2P102

Abstract: F011 F63TNR F852 FDFS2P102 L86Z
Contextual Info: August 1999 FDFS2P102 FETKEY P-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology combines a high cell density MOSFET and low forward drop 0.47V Schottky diode into a single surface mount power package. The

a7840

Abstract: fdfs6n303
Contextual Info: FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor’s FETKEY technology combines high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The MOSFET and

Contextual Info: FAIRCHILD S E M IC O N D U C T O R August 1999 tm FDFS2P102 FETKEY P-Channel MOSFET with Schottky Diode General Description Features -3.3 A, -20 V. RDS 0N = 0.125 £2 @ VGS = -10 V Rdsion) = 0.200 £2 @ VGS = -4.5 V. Fairchild Semiconductor's FETKEY technology combines a

mosfet with schottky diode

Abstract: FDFS2P103A
Contextual Info: FDFS2P103A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P103A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

FDFS2P103

Abstract: fairchild NDS
Contextual Info: FDFS2P103 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P103 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

FDFS2P106A

Contextual Info: FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P106A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

Contextual Info: FDFS2P753Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description „ Max rDS on = 115mΩ at VGS = -10V, ID = -3.0A The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low

fdfs6n303

Abstract: 6n303 L86Z SOIC-16 F011 F63TNR F852
Contextual Info: October 2001 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.

Contextual Info: FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P106A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

6n303

Abstract: fdfs6n303 fdfs SOIC-16
Contextual Info: October 2001 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.

fdfs6n303

Abstract: FDC6392S SOIC-8 mosfet FDFS2P102 FDFS2P102A FDFS2P103 FDFS2P106A FDW6923
Contextual Info: Discrete MOSFET and Schottky Diodes Products VDS V RDS(on) Max (Ohm) VGS= ID (A) QG Schottky Diode 10V 4.5V 2.5V (nC) @ VGS (V) VF (V) @ IF (A) PD (W) SOIC-8 N-Channel FDFS6N303 30 6 0.035 0.05 - 12 4.5 0.42 3 2 FDFS2P106A -60 3 0.11 0.14 - 15 10 0.58 2

Contextual Info: FDFS2P103 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P103 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

6N754

Contextual Info: Final Datasheet FDFS6N754 Integrated N-Channel PowerTrench tm MOSFET and Schottky Diode 30V, 4A, 56mΩ Features General Description „ Max rDS on = 56mΩ at VGS = 0V, ID = 4A The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very

Contextual Info: FRACTION-DIVIDED FREQUENCY SYNTHESIZERS FDFS Series Model Freq. Range GHz Step Size (MHz) Power Out (dBm) Phase Noise (dBc/Hz@1 K/@10K) Harmonics (dBc) Spurious (dBc) Frequency Control Power Supply (V/mA) Case FDFS-0506 0.5-0.8 1 +10 -100 -20/-15 -60 serial/parallel

FDFS6N548

Contextual Info: FDFS6N548 tm Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 7A, 23mΩ Features General Description „ Max rDS on = 23mΩ at VGS = 10V, ID = 7A The FDFS6N548 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low

FDFS6N754

Abstract: 30V vgs
Contextual Info: Final Datasheet FDFS6N754 Integrated N-Channel PowerTrench tm MOSFET and Schottky Diode 30V, 4A, 56mΩ Features General Description „ Max rDS on = 56mΩ at VGS = 0V, ID = 4A The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very