FDB60 Search Results

Contextual Info: April 1998 FAIRCHILD MlC O N D U C T O R FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,

26AVG

Abstract: LD26
Contextual Info: April 1998 PAIRCHII-D M ICDNDUCTQ R tm FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

Contextual Info: November 1997 FAIRCHILD SEM ICONDUCTO R PR E LIM IN A R Y m FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,

FDP6030L

Abstract: FDB6030L
Contextual Info: FDP6030L/FDB6030L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

550C

Abstract: FDB603AL FDP603AL
Contextual Info: April 1998 FAIRCHILD M IC Q N D U C T D R tm FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,

Contextual Info: F A IR C H IL D July 1998 SEM IC ONDUCTO R tm FDP6035AL/FDB6035AL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional

FDB6030BL

Abstract: FDP6030BL
Contextual Info: FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

FDB6035AL

Abstract: FDP6035AL
Contextual Info: FDP6035AL/FDB6035AL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

FDP6021P

Abstract: FDB6021P
Contextual Info: FDP6021P/FDB6021P 20V P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. • –28 A, –20 V. RDS ON = 30 mΩ @ VGS = 4.5 V

fdb fairchild

Abstract: FDB6030L FDP6030L
Contextual Info: FAIRCHILD S E M IC O N D U C T O R Apnl 1998 tm FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

FDB6030L

Abstract: FDP6030L
Contextual Info: April 1998 FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

FDP6030BL

Abstract: m 9835 ZENER SINGLE COLOR CODE CBVK741B019 EO70 F63TNR FDB6030BL FDP7060 NDP4060L
Contextual Info: FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

CBVK741B019

Abstract: EO70 F63TNR FDB6030BL FDP6030BL FDP7060 NDP4060L
Contextual Info: FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. FRDB-600-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF FDB PACKAGE PRV Ratings from 50 to 1000 Volts SERIES FDB600 - FDB610

FDB6030L

Abstract: FDP6030L
Contextual Info: FDP6030L/FDB6030L 30V N-Channel PowerTrench MOSFET General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. FRDB-600-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF FDB PACKAGE PRV Ratings from 50 to 1000 Volts SERIES FDB600 - FDB610

Contextual Info: April 1998 RAIRCHII-D M ICDNDUCTO R ^ FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

FDB6035AL

Abstract: FDP6035AL
Contextual Info: July 1998 FAIRCHILD MICDNDUCTDR- FDP6035AL/FDB6035AL N-Channel Logic Level PowerTrench MOSFET Features General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional

S1230

Abstract: FDB6030L FDP6030L
Contextual Info: April 1998 FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

FDB6021P

Contextual Info: FDB6021P 20V P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. • –28 A, –20 V. RDS ON = 30 mΩ @ VGS = 4.5 V

SFDB

Abstract: FDB610 FDB600 FDB606
Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. FRDB-600-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF FDB PACKAGE PRV Ratings from 50 to 1000 Volts SERIES FDB600 - FDB610

Contextual Info: F A IR C H IL D SEM IC ONDUCTO R A P ril 1998 tm FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,

FDB6030BL

Abstract: FDP6030BL 45dt3
Contextual Info: S E M IC O N D U C T O R PRELIMINARY tm FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench iMOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional

D2Pak Package dimensions

Abstract: transistor equivalent table fdb6021p CBVK741B019 FDB6021P FDP6021P FDP7060
Contextual Info: FDP6021P/FDB6021P 20V P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. • –28 A, –20 V. RDS ON = 30 mΩ @ VGS = 4.5 V