FDB FAIRCHILD Search Results

AN9757

Contextual Info: 2012 FDB9403_F085 N-Channel Power Trench MOSFET 40V, 110A, 1.2mΩ D D Features „ Typ rDS on = 1mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 164nC at VGS = 10V, ID = 80A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263AB FDB SERIES

FDB9403

Contextual Info: 2012 FDB9403_F085 N-Channel Power Trench MOSFET 40V, 110A, 1.2mΩ D D Features „ Typ rDS on = 1mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 164nC at VGS = 10V, ID = 80A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263AB FDB SERIES

Contextual Info: FDB075N15A_F085 N-Channel Power Trench MOSFET 150V, 110A, 7.5mΩ D D Features „ Typ rDS on = 5.5mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263 FDB SERIES Applications

Contextual Info: FDB86360_F085 N-Channel Power Trench MOSFET D D 80V, 110A, 1.8mΩ Features „ Typ rDS on = 1.5mΩ at VGS = 10V, ID = 80A G „ Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A „ UIS Capability G „ RoHS Compliant TO-263 FDB SERIES „ Qualified to AEC Q101 Applications

Contextual Info: FDB9406_F085 N-Channel PowerTrench MOSFET 40 V, 110 A, 1.8 mΩ D D Features „ Typ RDS on = 1.31mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263 FDB SERIES Applications

mosfet 600V 20A

Abstract: Mosfet 600V, 20A
Contextual Info: FCB20N60F_F085 600V N-Channe MOSFET D D 600V, 20A, 190mΩ Features G „ Typ rDS on = 171mΩ at VGS = 10V, ID = 20A „ Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A G „ UIS Capability TO-263AB FDB SERIES S „ RoHS Compliant „ Qualified to AEC Q101 S For current package drawing, please refer to the Fairchild

Contextual Info: FDB86363_F085 N-Channel PowerTrench MOSFET D D 80 V, 110 A, 2.4 mΩ Features „ Typical RDS on = 2.0 mΩ at VGS = 10V, ID = 80 A G „ Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A „ UIS Capability G „ RoHS Compliant TO-263 FDB SERIES „ Qualified to AEC Q101

14N30

Abstract: fdb fairchild 200a 300v mosfet MOSFET 300V FDB SERIES APPLICATION NOTES
Contextual Info: UniFET FDB14N30 TM 300V N-Channel MOSFET Features Description • 14A, 300V, RDS on = 0.29Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18 nC)

93c66

Abstract: 68HC11 80
Contextual Info: Fairchild Application Note 1012 SPI Versus MICROWIRE™ EEPROM Comparison FAIRCHILD SEMICONDUCTOR TM 5V INTRODUCTION The SPI Serial Peripheral Interface provides a simple eight bit serial port useful in communicating with external devices. Prior to the SPI EEPROMs introduction, engineers used the standard

Contextual Info: April 1998 RAIRCHII-D M ICDNDUCTO R ^ FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

Contextual Info: April 1998 FAIRCHILD MlC O N D U C T O R FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,

26AVG

Abstract: LD26
Contextual Info: April 1998 PAIRCHII-D M ICDNDUCTQ R tm FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

Contextual Info: April 1998 RAIRCHII-D M ICDNDUCTO R tm FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,

7030BL

Abstract: fb 4710 1205S 1N4148 LL42 SC1205 SC1205CS
Contextual Info: SC1205 High Speed Synchronous Power MOSFET Driver POWER MANAGEMENT Description Features K Fast rise and fall times 15ns typical with 3000pf The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power MOSFETs. Each driver is capable of driving a 3000pF load in 20ns

Contextual Info: March 1998 RAIRCHII-D M ICDNDUCTO R tm FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high

Contextual Info: RAIRCHII-D M ICDNDUCTO R January 1996 tm NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

d60n

Contextual Info: F A IR C H IL D S E M IC O N D U C T O R April 1998 m FDP7030L / FDB7030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,

DP6035L

Abstract: FDP6035L FDB6035L
Contextual Info: FAIRCHILD S E M IC O N D U C T O R Apnl 1998 tm F DP6035L/FD B6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

FDB6035AL

Abstract: FDP6035AL
Contextual Info: July 1998 FAIRCHILD MICDNDUCTDR- FDP6035AL/FDB6035AL N-Channel Logic Level PowerTrench MOSFET Features General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional

fdb fairchild

Abstract: FDB6030L FDP6030L
Contextual Info: FAIRCHILD S E M IC O N D U C T O R Apnl 1998 tm FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

Contextual Info: F A IR C H IL D S E M IC O N D U C T O R March 1998 m FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T h ese N -C hannel en hance m en t m ode 1 po w e r field effect transistors are produced using Fairchild's proprietary, high

B7030

Abstract: FDP7030BL B7030BL DB7030BL FDB7030BL B703 zener diode reverse breakdown voltage 4.5V
Contextual Info: FAIRCHILD s e m ic o n d u c t o r J u ly 1 9 9 8 FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrench™ MOSFET G eneral D escription Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC

fdb fairchild

Abstract: Z2150 fdb7030l FDP7030L
Contextual Info: | |_ | | N ovem ber 1997 S E M IC O N D U C T O R m FDP7030L / FDB7030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T h ese N -C hannel logic level en hance m en t m ode pow er field effe ct transistors are produce d using Fairchild's proprietary,