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Glenair Inc 800-011-07NC6-7SN Circular MIL Spec Connector CIRC MGHTY MSE (80/60) - CIRCULAR MIGHTY MOUSE
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Mouser Electronics	800-011-07NC6-7SN					1 - 10 $288.66 100 $221.07 1000 $221.07 10000 $221.07	Get Quote
Newark	800-011-07NC6-7SN	Bulk	35		1	1 $471.43 10 $259.10 100 $151.66 1000 $151.66 10000 $151.66	Buy Now
IXYS Corporation IXFH74N20P MOSFETs 74 Amps 200V 0.034 Rds
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TTI	IXFH74N20P	Tube	300		30	1 - 10 - 100 $4.01 1000 $3.81 10000 $3.81	Buy Now
IXYS Corporation IXFH60N65X2 MOSFETs MOSFET 650V/60A Ultra Junction X2
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TTI	IXFH60N65X2	Tube	300		30	1 - 10 - 100 $7.10 1000 $6.44 10000 $6.31	Buy Now
ROHM Semiconductor SCT3040KRC14 SiC MOSFETs TO247 1.2KV 55A N-CH SIC
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TTI	SCT3040KRC14	Tube	240		240	1 - 10 - 100 - 1000 - 10000 -	Buy Now
ROHM Semiconductor SCT3040KLGC11 SiC MOSFETs N-Ch 1200V SiC 55A 40mOhm TrenchMOS
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TTI	SCT3040KLGC11	Tube	120		30	1 - 10 - 100 $28.44 1000 $28.44 10000 $28.44	Buy Now

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107NC Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FDB9406 Abstract: FDB9406/MAX6958AAPE-datasheet Contextual Info: FDB9406_F085 N-Channel Power Trench MOSFET December 2012 FDB9406_F085 N-Channel Power Trench® MOSFET 40V, 110A, 1.8mΩ D D Features Typ rDS on = 1.31mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A G UIS Capability RoHS Compliant	Original	FDB9406 107nC O-263AB FDB9406/MAX6958AAPE-datasheet	PDF
Contextual Info: FDB9406_F085 N-Channel PowerTrench MOSFET 40 V, 110 A, 1.8 mΩ D D Features Typ RDS on = 1.31mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A G UIS Capability RoHS Compliant G Qualified to AEC Q101 TO-263 FDB SERIES Applications	Original	FDB9406 107nC O-263	PDF
Contextual Info: FDI9406_F085 N-Channel PowerTrench MOSFET 40 V, 110 A, 2.2 mΩ D Features Typ RDS on = 1.73mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A G UIS Capability RoHS Compliant Qualified to AEC Q101 TO-262AB FDI SERIES Applications	Original	FDI9406 107nC O-262AB	PDF
FDI9406 Contextual Info: FDI9406_F085 N-Channel Power Trench MOSFET December 2012 FDI9406_F085 N-Channel Power Trench® MOSFET 40V, 110A, 2.2mΩ D Features Typ rDS on = 1.73mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A G UIS Capability RoHS Compliant	Original	FDI9406 107nC O-262AB	PDF
RJK03P7DPA Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position	Original	0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1	PDF