irf 560
Abstract: Diode LT 58A 9410A
Contextual Info: FAIRCHILD March 1997 M lC O N D U C T O R FDR9410A N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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1RFD110
Abstract: FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111
Contextual Info: 3 H A R R IS IRFD110/111/112/113 IRFD110R/111R/112R/113R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package 4 -P IN D IP • 1A and 0.8A, 80V - 100V TOP VIEW • rDS on) = 0 .6 ÎÎ and 0 .8 fi • Single Pulse Avalanche Energy Rated*
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irfd110/111/112/113irfd110r/111r/112r/113rirfd110irfd111+13irfd112irfd113irfd110rirfd111rirfd112rirfd113r1rfd110fd110fd-111 diodeof irfd 110irfd 110harris irfd110irfd11
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IRFD110
Abstract: IRFD113 IRF0110 c 3209 IRFD111 IRFD112
Contextual Info: - Standard Power MOSFETs File Number IRFD110, IRFD111, IRFD112, IRFD113 2314 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors
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Contextual Info: • 43 022 71 O O S M CH O 77T ■ H A R R I HAS S I R F D 1 1 0 / 1 1 1 / 1 1 2 / 1 1 3 I R F D 1 1 0 R / 1 1 1 R / 1 1 2 R / 1 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features 4-PJN DIP • 1A and 0.8 A , 8 0 V - 100V
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acrian RF POWER TRANSISTOR
Abstract: I3003 25CC TPR175 TPR400 TPR400-2 transistor DF 50 we400 Scans-00115664
Contextual Info: 0182998 ACRIAN n ^ a ISJm’I r ; ^ y GENERAL T7 INC j ^ « q BMC rj^ |j |!|gM tw g ; T P R 4 0 0 400 WATTS • 50 VOLTS 1030/1090 MHz DESCRIPTION The TPR400 is a silicon NPN common base RF power transistor designed specifically for pulsed operation as a transponder/interrogator amplifier in the 1030 to
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tpr400pw-10vcc-50dd01d71+11t-33-15tpr400-306-6pfacrian rf power transistori300325cctpr175tpr400-2transistor df 50we400scans-00115664
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IR2103 bldc driver
Abstract: 60NF60 e bike motor controller Electric Bike microcontroller ARM circuit active brake mosfet switch BLDC Motor 75N75 TE 555-1 HT45B0C ADC 7815
Contextual Info: Driving a BLDC Motor Using the HT45FM03B – C Language Driving a BLDC Motor Using the HT45FM03B – C Language D/N:HA0230E Introduction Brushless DC motors, which are controlled using electric commutation and PWM modulation, have the advantages of greater motor life by overcoming the problems associated with DC
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ht45fm03bd/nha0230eir2103 bldc driver60nf60+8e bike motor controllerelectric bike microcontrollerarm circuitactive brake mosfet switch bldc motor75n75te 555-1ht45b0cadc 7815
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IR2103 bldc driver
Abstract: electric bike motor assembly language program for speed control e bike motor controller IC2 7805 active brake mosfet switch BLDC Motor HT45B0C assembly language program for speed control of dc brushless bike brushless dc motor speed control bike
Contextual Info: Driving a BLDC Motor using the HT45FM03B Assembly Language Driving a BLDC Motor using the HT45FM03B (Assembly Language) D/N:HA0229E Introduction Brushless DC motors, in using electric commutation and PWM drive methods, greatly extend the life of electric motors, by overcoming problems derived from DC motor mechanical
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ht45fm03bd/nha0229eir2103 bldc driverelectric bike motor+8assembly language program for speed controle bike motor controlleric2 7805active brake mosfet switch bldc motorht45b0cassembly language program for speed control of dcbrushless bikebrushless dc motor speed control bike
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thyristor tag 8422
Abstract: ditty EPC-31 gpr 163 MIPS R4000 mmi2 thyristor handbook transistor mfsa 42 C790 D-10
Contextual Info: TX System RISC TX79 Core Architecture Symmetric 2-way superscalar 64-bit CPU Rev. 2.0 The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or
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64-bitthyristor tag 8422dittyepc-31+7gpr 163mips r4000mmi2thyristor handbooktransistor mfsa 42c790d-10
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transistor f613
Abstract: transistor bc 567
Contextual Info: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.
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ao4604ao4604l-ao4604l16789aba2cde9afdc+2transistor f613transistor bc 567
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jd 1803
Abstract: otc114 E2p 93 transistor 2SD1834 B14A DTC143YKA DTC143ZKA transistor marking w9 2SA1690 UMW10
Contextual Info: The Class and Basic Ordering Units for Standard and Semi-standard Products T o m a k e it e a sier for th e cu sto m er to s e le c t th e ty p e o f product b est suited to specific applications, we offer transistors in three types. : an d 1 sta n d a rd ,
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2sa17742sa18212sa18852sc4617+162sc46182sc46192sc46492sc47252sc47262sc4997jd 1803otc114e2p 93 transistor2sd1834b14adtc143ykadtc143zkatransistor marking w92sa1690umw10
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transistor d 1264 a
Abstract: transistor A 1264 transistor d 1264
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has
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buk98150-55ot223transistor d 1264 atransistor a 1264+1transistor d 1264
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Contextual Info: D EVELO PM EN T DATA PCD3360 T h is data sheet co n ta in s advance in fo rm a tio n and sp e cificatio n s are su b ject to change w ith o u t n otice. - A _ PROGRAMMABLE MULTI-TONE TELEPHONE RINGER G E N E R A L D ESC R IPTIO N The PCD3360 is a CMOS integrated circuit, designed to replace the electro-mechanical bell in telephone
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Datenbuch
Abstract: Raupenhaus hermsdorf VEB Halbleiterbauelemente thermistore Scans-048 Frankfurt Oder LB1201 DSAGER0002 Thermistor 15k
Contextual Info: I I i n □ electronic Hinweis: Die Daten von Dioden und Transistoren aus dieser Unterlage sind bereits in anderen Datenbüchern des Raupenhauses enthalten. Deshalb wurde aus diesem Buch nur der Teil "Halbleiter-Widerstände" entnommen. Halbleiter-Bauelemente
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datenbuchraupenhaushermsdorfveb halbleiterbauelemente+6thermistorescans-048frankfurt oderlb1201dsager0002thermistor 15k
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K1HC
Abstract: FVT6
Contextual Info: HD66300T-Horizontal Driver for TFT-Type LCD Color TV PRELIMINARY D escription The HD66300T is a horizontal driver used for TFTtype Thin Film Transistor L C D color TVs. Specifi cally, it drives thedrainbussignalsofaTFT-type L C D panel. The HD66300T receives as input tjiree video signals R,
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LC1 D12 P7
Abstract: XC2000 XC3000 XC4000 XC5200 XC5202 XC5204 XC5206 XC5210 XC5215
Contextual Info: XC5200 Field Programmable Gate Arrays August 6, 1996 Version 4.01 Preliminary Product Specification Features • Fully supported by XACTstep Development System - Includes complete support for XACT-Performance™, X-BLOX™, Unified Libraries, Relationally Placed
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xc5200pq100vq100xc5202+10xc5204xc5206xc5210xc5215tq144pg156lc1 d12 p7xc2000xc3000xc4000
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3904S
Abstract: wi fi marking code transistor HK
Contextual Info: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 ^ ^ • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SM BT 3906S (PNP)
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3904s100ma3906svps05604+5eha07178q62702-a1201ot-363wi fimarking code transistor hk
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AH5E
Abstract: ic 3773 g0532 JE 33 T108 marking "l34" AH-045 fI0262
Contextual Info: NEC - f — S 7 • Ss— K Compound Transistor FA1A4P 'J □ > S#lF*3ìScNPN:i: f t W t 'iM i ^ m m l R i = 10 kQ , R 2 = 47 kQ ) 2 .8 + 0.2 0.65—8; i s 1.5 O F N 1 A 4 P t => > 7 ° ' ) 9 y 9 ') T l È f f l T 'è i t . II s zj u 9 9 •^ - x f S i ' I E
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pws10ah5eic 3773g0532+5je 33t108marking "l34ah-045fi0262
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fqmb
Abstract: LD 25 V BUK793-60A philips ah 686
Contextual Info: Philips Components Data sheet status P re lim in a ry s p e c ific a tio n date of issue PHILIPS March 1991 BUK793-60A PowerMOS transistor SensorFET INTERNATIONAL SbE ]> Li GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a
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buk793-60a711gfl5b00mm747711dfleb+3fqmbld 25 vphilips ah 686
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2SD1491
Abstract: S0426 14s6 RL-50 m1.0425 l0897 u236
Contextual Info: NEC Silicon Power Transistor r - 2SD1491Ü 3 ^ ; •X ; y 4 * - K, ’T — K r f êï f é v u / >f ^ # T H i “ - ' . } ; « *HB0 JÊfi! 1mm h > F m) uv h 7 ^ r 8.5 M A X . m i t M t « 2.8 M A X . ~4> 3 2 ± o i t ' t c CM % ft o +1 I T K i t i 7 ) T 'i a ,
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2sd1491ptlta-25s042614s6+4rl-50m1.0425l0897u236
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SV3a
Abstract: WSOP 48 socket 0B 2262 20-PIN LZ21N3V LZ21N3VS SV-3A
Contextual Info: SHARP LZ21N3V/VS L Z 21N 3V /V S 1/2-type Interline Color CCD Area Sensors with 2 140 k Pixels DESCRIPTION PIN CONNECTIONS The LZ21N3V/VS are 1/2-type 8.08 mm solid- TOP VIEW 20 -P IN H A L F -P IT C H W D IP state image sensors that consist of PN photo
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lz21n3v/vssv3awsop 48 socket0b 2262+420-pinlz21n3vlz21n3vssv-3a
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xeh 250 120
Abstract: T108 TC-6056 UUJK
Contextual Info: 5 ; . = /— 1^. ~J— NEC m Com pound Transistor FAI L4Z ty - ÌV - • m m $ f t o^qrxffi^^lLtv^tc ( R x= 4 7 2.8 + 0.2 0.651 1.5 kQ) O E o F N 1 L 4 Z =? > 7 ° t (T a Il U / = > 9 ]) X i t m T ' è £-?< 25 °C ) h& ^r # Se VcBO te 60 V Marking Z JU 9 9 ' ^ - l " / 9 f f J M E
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pws10xeh 250 120t108tc-6056+1uujk
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D287A
Abstract: SH120 Ga 81 SR118
Contextual Info: HD66300T Horizontal Driver for TFT-Type LCD Color TV Description Features The HD66300T is a horizontal driver used for TFT-type (Thin Film Transistor) LCD color TVs. Specifically, it drives the drain bus signals of a TFT-type LCD panel. • LCD drive outputs: 120
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hd66300td287ash120ga 81+1sr118
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hd61105
Abstract: no2rg SR119 msf1 D113 D114 D115 D116 D117 D118
Contextual Info: HD66300T Horizontal Driver for TFT-Type LCD Color TV Description The HD66300T is a horizontal driver used for TFT-type (Thin Film Transistor) LCD color TVs. Specifically, it drives the drain bus signals of a TFT-type LCD panel. The HD66300T receives as input three video signals R, G, B, and their inverted signals 5, * and %.
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hd66300thd61105no2rgsr119+7msf1d113d114d115d116d117d118
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rkm 33 transistor
Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
Contextual Info: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.
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fma10afma11aimb10aimb11a+16imb16imb17aimd10aimd14imd16aimh10arkm 33 transistorbkd transistordtd133hkabkd c6dtb133hkatransistor bjd2sa1885rkm 20 transistor2sc5274rkm transistor
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