FCSI0599M200 Search Results

Contextual Info: FMM5522GJ VSATMMIC FEATURES • • • • • • High Output Power: P-|<jB = 35.0dBm Typ. High Gain: G-ih r = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION

Contextual Info: FLM5972-8F C-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 39.0dBm Typ. • High Gain: G ^ b = 8.5dB (Typ.) • High PAE: riadd = 31% (Typ.) • Low IM3 = -45dBc@Po = 28.0dBm • Broad Band: 5.9 ~ 7.2GHz • Impedance Matched Zin/Zout = 50Q

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Abstract: power amplifier mmic
Contextual Info: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 25.5dBm Typ. High Gain: G1dB = 9dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology

Contextual Info: FMM5522GJ VSAT MMIC FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION

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Abstract: FMM5702 FMM5702X FUJITSU MMIC LNA
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

Contextual Info: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P id B : 23.0dBm (Typ.) • High Gain: ( G ^ b ): 18dB (Typ.) • High PAE: riadd = 18% (Typ.) •;■ * ,iq'-4 ‘; .*■' 1; 1TH '-W S *. .•xJ1 ' ji l * ■ ! > : , ! J 9 ■ L 1

Contextual Info: FLL310IQ-3A L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 30W Excellent Linearity Suitable for class A and class AB operation. High PAE: 40%. DESCRIPTION The FLL310IQ-3A is a 30 Watt GaAs FET that employs a push-pull design which

Contextual Info: FLM7179-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 8.0dB (Typ.) High PAE: hadd = 30% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W

Contextual Info: FLM7179-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: hadd = 38% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W

FMM5702X

Abstract: FMM5702
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

FMM5804X

Abstract: fujitsu power amplifier GHz
Contextual Info: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P1dB : 23.0dBm (Typ.) • High Gain: (G1dB): 18dB (Typ.) • High PAE: ηadd = 18% (Typ.) • Wide Frequency Band: 17.5-31.5 GHz • Impedance Matched Zin/Zout = 50Ω • 0.25µm PHEMT Technology

FLM7179-12F

Contextual Info: FLM7179-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω

FLM5972-8F

Contextual Info: FLM5972-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -45dBc@Po = 28.0dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω

Contextual Info: FLM7785-12F C-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 41 -506171 Typ. • High Gain: G ^ b = 8.5dB (Typ.) • High PAE: riadd = 34% (Typ.) • Low IM3 = -46dBc@Po = 30.5dBm • Broad Band: 7.7 ~ 8.5GHz • Impedance Matched Zin/Zout = 50Q

Contextual Info: FMM5522GJ VSAT MMIC FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION

CD 294

Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package

fujitsu gaas fet

Abstract: FLL310IQ-3A
Contextual Info: FLL310IQ-3A L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 30W Excellent Linearity Suitable for class A and class AB operation. High PAE: 40%. DESCRIPTION The FLL310IQ-3A is a 30 Watt GaAs FET that employs a push-pull design which

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Abstract: fujitsu power amplifier GHz fujitsu phemt FUJITSU RF 053
Contextual Info: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • High Output Power: P ^ b = 25.5dBm Typ. • High Gain: G ^ b = 9dB (Typ.) • High PAE: riadd = 20% (Typ.) • Wide Frequency Band: 27.5-31.5 GHz

Contextual Info: FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: hadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50W

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Contextual Info: FLM7785-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: hadd = 34% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50W

FLM7179-12F

Abstract: cq 443 fet 2819 18 g
Contextual Info: FLM7179-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 41 -506171 Typ. High Gain: G ^ b = 9.0dB (Typ.) High PAE: riadd = 38% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Q

FLM1011-3F

Abstract: fujitsu gaas fet
Contextual Info: FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 35.0dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Q

FMM5522GJ

Contextual Info: FMM5522GJ VSAT MMIC FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION

FMM5702

Abstract: FMM5702X 34500 544 mmic 2732G NF 936
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for