FC80 Search Results

Contextual Info: O rd e rin g n u m b e r: EN 4338A FC808 Silicon Epitaxial Planar Type High-Speed Switching Composite Diode Cathode Common F eatu re s • Composite type with 4 diodes contained in the CP package currently in use, saving the mounting space greatly. • Fast switching speed.

FC803

Abstract: SB007W03C
Contextual Info: Ordering number :EN3193A FC803 Silicon Schottky Barrier Diode 30V, 70mA Rectifier Features Package Dimensions • Low forward voltage VF max=0.55V . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 4 diodes contained in the CP package currently in use, improving the mounting

FC809

Abstract: SB007-03CP
Contextual Info: Ordering number :EN3908A FC809 Silicon Barrier Diode 30V, 70mA Rectifier Applications Package Dimensions • General rectification applications. · High frequency rectification switching regulators, converters, choppers . unit:mm 1236A [FC809] Features · Low forward voltage (VF max=0.55V) .

Contextual Info: FC8000 Terrestrial Digital Multimedia Broadcast RF tuner & Demodulator 1.2. Features q Highl integrated digital device for DAB stream and Audio PAD data receiver Eureka 147) q q l Korea DAB/DMB (TTAS.KO -07.0024 and interfaces (I2S) TTAS.KO-07.0026) standard compliant

COUPLED RECEIVER

Abstract: arinc 818 Communications Controller 10 gbps transceiver arinc 818 GaAs array, 850nm Ultra Communications 8B-10B
Contextual Info: OPTO-FireTM Transceiver The C-MAC FC8001 OPTO-FireTM transceiver range is based on a high performance ruggedised optical interface from Ultra Communications Inc. which is qualified and operational in space*. The product, manufactured in the UK is intended for industrial, military, space and other harsh environment applications for

Contextual Info: O rd e rin g n u m b e r: EN 3108B _ NO.3108B FC802 Silicon Epitaxial P la n ar Type Com posite D iode for H igh-Speed S w itch in g A pp lications Features • Composite type with 4 diodes contained in the CP package currently in use, resulting in the greatly

FC808

Contextual Info: Ordering number :EN4338A FC808 Silicon Epitaxial Plannar Type High-Speed Switching Composite Diode Cathode Common Features Package Dimensions • Composite type with 4 diodes contained in the CP package currently in use, saving the mounting space greatly.

DCA015

Abstract: FC801
Contextual Info: Ordering number :EN3107A FC801 Silicon Epitaxal Planar Diode Composite Diode for High-Speed Switching Applications Features Package Dimensions • Composite type with 4 diodes contained in the CP package currently in use, improving the mounting efficiency greatly.

AN 34002

Abstract: marking 805 FC805 SB05 IR150 an 34001
Contextual Info: Ordering number :EN3400B FC805 Silicon Schottky Barrier Diode 30V, 500mA Rectifier Features Package Dimensions • Low forward voltage VF max=0.55V . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space

FC804

Abstract: ITR10723 ITR10724 ITR10725 ITR10726
Contextual Info: 注文コード No. N 3 1 9 4 A FC804 No. N 3 1 9 4 A N2000 半導体ニューズ No.3194 とさしかえてください。 FC804 特長 シリコンショットキバリアダイオード 30V, 200mA 整流素子 ・順電圧が低い（VF max=0.55V） 。

FC803

Abstract: ITR10719 ITR10720 ITR10721 ITR10722 SB007W03C
Contextual Info: 注文コード No. N 3 1 9 3 A FC803 No. N 3 1 9 3 A N2000 半導体ニューズ No.3193 とさしかえてください。 FC803 特長 シリコンショットキバリアダイオード 30V, 70mA 整流素子 ・順電圧が低い（VF max=0.55V） 。

Contextual Info: Ordering number :EN3908A FC809 Silicon Barrier Diode 30V, 70mA Rectifier Applications Package Dimensions • General rectification applications. · High frequency rectification switching regulators, converters, choppers . unit:mm 1236A [FC809] Features · Low forward voltage (VF max=0.55V) .

vcsel SMD

Abstract: arinc 818 10gb TX drive ARINC 818 SERIAL TRANSMITTER AND DUAL RECEIVER Ultra Communications
Contextual Info: OPTO-FireTM Transceiver The C-MAC FC8001 OPTO-FireTM transceiver range is based on a high performance ruggedised optical interface from Ultra Communications Inc. which is qualified and operational in space*. The product, manufactured in the UK is intended for space, military and other harsh environment applications for airborne and

KT 804

Abstract: FC804
Contextual Info: Ordering number :EN3194A FC804 Silicon Schottky Barrier Diode 30V, 200mA Rectifier Features Package Dimensions • Low forward voltage VF max=0.55V . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 2 diodes contained in the CP package currently in use, improving the mounting

AN82527F8

Abstract: AS82527F8 SB82558B S82595FX TA80960KB25 TL82543GC sb82371sbsu093 ku82596sx20sz713 SB82371SB GD82559ERSL3TU
Contextual Info: i960 MICROPROCESSORS Continued Intel Part No. A80960JA3V25 A80960JA3V33 A80960JD3V33 A80960JD3V50 A80960JD3V66 A80960JF3V25 A80960JF3V33 A80960KA16 A80960KA25 A80960KB16 A80960KB20 A80960KB25 A80960MC25 FC80960HA25SL2GU FC80960HA33SL2GV FC80960HA40SL2GW

Contextual Info: Ordering number :EN3107A FC801 Silicon Epitaxal Planar Diode Composite Diode for High-Speed Switching Applications Features Package Dimensions • Composite type with 4 diodes contained in the CP package currently in use, improving the mounting efficiency greatly.

FC806

Abstract: ITR10731 ITR10732 ITR10733 ITR10734 SB01
Contextual Info: 注文コード No. N 3 4 0 1 A FC806 No. N 3 4 0 1 A N2000 半導体ニューズ No.3401 とさしかえてください。 FC806 特長 ショットキバリアダイオード 50V, 100mA 整流素子 ・順電圧が低い（VF max=0.55V） 。 ・逆回復時間が短い（trr max=10ns）

marking 802

Abstract: DCB015 FC802
Contextual Info: Ordering number :EN3108B FC802 Silicon Epitaxal Planar Diode Composite Diode for High-Speed Switching Applications Features Package Dimensions • Composite type with 4 diodes cintained in the CP package currently in use, resulting in the greatly improved circuit board using efficiency.

Contextual Info: VS-FC80NA20 www.vishay.com Vishay Semiconductors SOT-227 Power Module High Side Chopper - Power MOSFET, 100 A FEATURES 3 D MOSFET • Enhanced body diode dV/dt and dIF/dt capability • Improved gate avalanche and dynamic dV/dt ruggedness 2 (G) 1 (S, K)

Contextual Info: Ordering number:EN4337A _Silicon Epitaxial Planar FC807 Type High-Speed Switching Composite Diode Anode Common Features • Composite type with 4 diodes contained in the CP package currently in use, improving the mounting efficiency greatly.

Contextual Info: Ordering number:EN4337A FC807 Silicon Epitaxial Planar Type High-Speed Switching Composite Diode Anode Common Features Package Dimensions • Composite type with 4diodes contined in the CP package currently in use, improving the mouting efficiency greatly.

kt 807

Abstract: FC807
Contextual Info: Ordering number:EN4337A FC807 Silicon Epitaxial Planar Type High-Speed Switching Composite Diode Anode Common Features Package Dimensions • Composite type with 4diodes contined in the CP package currently in use, improving the mouting efficiency greatly.

s8005

Abstract: 1SS351 B10018 SB30-09 SB3009 SB30-03P S80050 SB40-05J
Contextual Info: Schottky Barrier Diodes Breakdown voltage V lo (mA) 15 50 30 Breakdown voltage (V) 90 150 lo (mA) 180 15 SB002-15CP SB002-15SPA 0.02 S8005-09CP S3005-09SPA 0.05 3.0 SB007-03Q SB007-03CP SB007-03SPA SB007T03C SB007T03Q SB007W03Q S8007W03C SB007W03S FC803 (CP6)

3400B

Abstract: FC805 SB05-03C 34002
Contextual Info: Ordering n u m b e r: EN3400B _ FC805 NO.3400B Silicon Schottky Barrier Diode 30V, 500mA Rectifier F eatu re s • Low forward voltage Vp max = 0.55V . •Fast reverse recovery time (trr max = 10ns). • Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space