FC40V7177B Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC40V7177B! .' , Unat MW • St'« I 7.1~7.7GH* BAND lO W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 7 1 7 7 B is a n in te rn a lly im p e d a n c e -m a tc h e d GaA s p o w e r F E T especially designed fo r use in 7 . 1 — 7 . 7

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V7177B P R E U - nc,uic. ^ 3 7 .1 — 7 .7G H z BA N D lO W IN TE R N A LLY M ATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 1 7 7 B is an in te rna lly im p e d a n ce -m a tch e d GaAs power F E T especially designed fo r use in 7 1 — 7 .7

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Abstract: MGFC40V7177 MGFC40V7177B
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M FC40V7177B s<^pa,a' 7 .1 — 7 .7 G H z BAND 1 0 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 1 7 7 B is an in te rna lly im p e d a n ce -m a tch e d GaAs power F E T especially designed fo r use in 7 .1 — 7 .7

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FC40V7177B so" pa „m C U '1-' . 7 .1 — 7 .7 G H z BAND ÎO W INTERNA LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 7 1 7 7 B is a n in te rn a lly im p e d a n c e -m a t c h e d G aA s p o w e r F E T especially designed fo r use in 7 . 1 — 7 . 7