FBS MARKING TRANSISTOR Search Results

fbs MARKING TRANSISTOR

Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR360T

Abstract: SC75
Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP36

Contextual Info: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

IC 7306

Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR360T

Abstract: BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325
Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP36

Contextual Info: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP360W

Abstract: BFP36
Contextual Info: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP36

Contextual Info: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

sen 1327 gas sensor

Abstract: UK10N uk3n UK16N UK5N UKK3 UKK5 UK4-TG UK6N UK5-TWIN
Contextual Info: Modular Terminal Blocks Micro Terminal Blocks These Micro-Terminal blocks feature compact construction 4.2mm wide , are bridgeable in the center, have matching ground blocks and mount on NS 15 rails. MT1.5 9not shown) is a 2 conductor block (1-input, 1-output), MT1.5-TWIN has 1-input, 2 outputs

BFR360F

Abstract: AN077
Contextual Info: BFR360F NPN Silicon RF Transistor • Low noise amplifier for low current applications • Collector design supports 5V supply voltage 2 3 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package • Qualified according AEC Q101

Contextual Info: BFR360F NPN Silicon RF Transistor • Low noise amplifier for low current applications 2 3 • Collector design supports 5V supply voltage 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package • Qualified according AEC Q101

Contextual Info: BFR360F NPN Silicon RF Transistor* • Low voltage/ low current operation 2 3 • For low noise amplifiers 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR360F NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation 2 3
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 1
Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

2R5TPE470M9

Abstract: C3225X7R1E106M MAX8720 MAX8720EEI MAX8720ETX SI7390DP
Contextual Info: 19-3319; Rev 2; 9/05 KIT ATION EVALU E L B A IL AVA Dynamically Adjustable 6-Bit VID Step-Down Controller The MAX8720 step-down controller is intended for core CPU DC-DC converters in notebook computers. It features a dynamically adjustable output, ultra-fast transient

RF NPN POWER TRANSISTOR C 10-12 GHZ

Abstract: BFR360F TRANSISTOR MARKING NK
Contextual Info: BFR360F NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

BFR360F

Abstract: 104GHz transitor RF 98
Contextual Info: BFR360F NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation 2 3
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 1
Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR360F Low Noise Silicon Bipolar RF Transistor • Low noise amplifier for low current applications • Collector design supports 5 V supply voltage 2 3 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant and halogen-free thin small

Contextual Info: BFR360F NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation 2 3
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 1
Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR360F NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation 2 3
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 1
Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

IC 7437

Abstract: BFR360F
Contextual Info: BFR360F NPN Silicon RFTransistor Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR360F NPN Silicon RFTransistor Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: International I “ R Rectifier smpsmosfet , ^ lo _ !^8.!0 IR F IB /N d OA HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching • High Voltage Isolation = 2.5KVRMS® V d ss