FAST RECOVERY DIODE 1A TRR 200NS Search Results

FAST RECOVERY DIODE 200ns

Abstract: fast recovery diode 1a trr 200ns fast recovery diode 2a trr 200ns TO3 package RthJC diode 15A FAST RECOVERY DIODE 200ns 2a NTE6200 NTE6202 NTE6206 NTE6208
Contextual Info: NTE6200 thru NTE6210 Positive Center Tapped Silicon Recitifers 30 Amp 15A per diode Features: D D D D Available in Standard (NTE6200 & NTE6202) and Fast (NTE6206 thru NTE6210) Recovery 250 Amps Peak One Half Cycle Surge Current Fast Recovery Types: trr = 200ns Max

Contextual Info: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated

150A diode

Abstract: 300V switching transistor QCA150BA60 600v 3a ultra fast recovery diode high hfe transistor E7610
Contextual Info: TRANSISTOR MODULE Hi- QCA150BA60 UL;E76102 M QCA150BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is

fast recovery diode 2a trr 200ns

Abstract: vvvf motor QCA100BA60 600v 2A ultra fast recovery diode dc motor control 100A Darlington 300v
Contextual Info: TRANSISTOR MODULE Hi- QCA100BA60 UL;E76102 M QCA100BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is

QCA75BA60

Abstract: fast recovery diode 1a trr 200ns 600v 1.5a fast recovery transistor 600V 75A ultra fast recovery time diode 100ma
Contextual Info: TRANSISTOR MODULE Hi- QCA75BA60 UL;E76102 M QCA75BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is

darlington 8A 300V

Abstract: 300V switching transistor SQD400BA60 M6 transistor
Contextual Info: TRANSISTOR MODULE Hi- SQD400BA60 UL;E76102 M SQD400BA60 is a Darlington power transistor module with a ULTRA HIGH hFE, high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is electrically isolated

diode 300v 200A

Abstract: 200A diode 026A darlington 8A 300V QCA200BA60 dual DIODE 200A 600V transistor 026a
Contextual Info: TRANSISTOR MODULE Hi- QCA200BA60 UL;E76102 M QCA200BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is

RURU150120

Contextual Info: RURU150120 Data Sheet January 2000 File Number 4146.1 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

RURU150120

Contextual Info: RURU150120 Data Sheet January 2002 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

Vbe 40 transistor

Abstract: SQD300BA60 600v 10A ultra fast recovery diode diode module 6A darlington power transistor 10a fast recovery diode 1a trr 200ns
Contextual Info: TRANSISTOR MODULE Hi- SQD300BA60 UL;E76102 M SQD300BA60 is a Darlington power transistor module with a ULTRA HIGH hFE, high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is electrically isolated

E2 diode

Abstract: Diode B2x
Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1

K06N60

Abstract: fast recovery diode 2a trr 200ns SKB02N60
Contextual Info: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

K06N60

Abstract: fast recovery diode 2a trr 200ns PG-TO-220-3-1 SKP02N60
Contextual Info: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

Contextual Info: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

K06N60

Abstract: SKB02N60 200v 1.5v 3a diode 400v 3a low vf diode
Contextual Info: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

Contextual Info: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

Contextual Info: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

Contextual Info: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for: - Motor controls

SKB02N60

Abstract: SKP02N60 200v 1.5v 3a diode
Contextual Info: SKP02N60 SKB02N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

K06N60

Abstract: SKB02N60 PG-TO-263-3-2
Contextual Info: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,

Contextual Info: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for frequency inverters for washing machines,

K02N120

Contextual Info: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation  Short circuit withstand time – 10 s

QF30AA60

Abstract: QF20AA60 TRANSISTOR JC SQD200A60 SQD300A40 SQD200A40 D 1380 Transistor SQD400BA60 20S0 sqd300a60
Contextual Info: TRANSISTOR MODULE SQD200A40/60 UL;E76102 （M） 95max 80±0.25 23 23 ● IC＝200A, 62max 48±0.25 15 （Applications） Motor Control（VVVF）, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 4ｰφ5.5 1 2 3 C1 E1 C1 B2 E2 VCEX＝400/600V

Q67040-S4215

Abstract: SKB02N60 SKP02N60
Contextual Info: SKP02N60 SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls