FAST RECOVERY DIODE 1000V 30A Search Results

5AAFT

Contextual Info: ERD27ERD77 10A*1000V »±'<9-*y*-K • a « g a E ? y *-K : Outline Drawings FAST RECOVERY DIODE : Features • Glass passivated ch ip H ig h reverse v o lta g e c a p a b ility • 7>9"sY'ffc S tu d m o u n te d : Applications 9 S w itc h in g p o w e r s u p p lie s

High-Rel Discrete Semiconductors

Abstract: fast recovery diode 1000v 10A fast recovery diode 400v 5A fast recovery diode 600v 5A IN4954 150a 400v diode bridge diode 50v 5A 3-Phase Full-Wave Bridge Rectifier Zener Diode Glass 50v DIODE RECTIFIER BRIDGE SINGLE 55a 600v
Contextual Info: 2010 Catalog High-Rel Discrete Semiconductors Assembly Products Semtech’s Strategy in Discrete Products is to supply devices, either in axial, surface-mount or custom assembly configurations, that are rugged in design and in packages that are both hermetic and varied

smps with uc3842 and tl431

Abstract: mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a mc34063 step up 5a MOSFET 1000v 30a uc3842 step down mc34063 triple output
Contextual Info: POWER SUPPLY EQUIPMENT STMicroelectronics SOLUTIONS Power Converter Block Diagram Mains Mains Rectification Conditioning Mains Rectification / Inrush Current Limitation Mains Conditioning Primary Secondary Primary Secondary RECOMMENDED DEVICES MAIN FEATURES

Contextual Info: APT30DF100HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 1000V IC = 30A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • •

8005-K

Abstract: BPC35 Collmer Semiconductor kbpc3510 RDF005-RDF10 kbpc 50a 10m BPC6005-KBPC610 RKBPC6005 CD600 RW00SM AKBPC3504
Contextual Info: < s Silicon Bridge Rectifiers 1 Amp Silicon Bridge Rectifiers D F 005-D F10 Series. Single-phase, full-wave bridge rectifiers in 4-pin Dual-in-Line packages. 50V to 1000V VRRM . 1A (l0 ), 30A peak one-half cycle surge. Epoxy package has UL94V-0 flame retardant rating. Lead solderable per MIL-STD

fast recovery diode 1000v 30A

Abstract: 6RI50E-080M5 ESAL-01-01C 6RI30G-160 2fi300a-060 6RI75G-160B 6RI100G160 2RI250E-060 diode 100a 1000v 6RI75G160B
Contextual Info: DIODE MODULES Quick Selection Guide Nov-01 Comprehensive chart Rated current General use diode modules Repetitive peak reverse voltage VRRM 300V 30A 50A 600V 800V 6RI30E-060 6RI30E-080 6RI50E-060 6RI50E-080 1000V 1200V 1600V 6RI30G-120 6RI30G-160 6RI50E-080B

URG30100C

Abstract: RURG30100CC URG30100
Contextual Info: RURG30100CC Data Sheet Title UR 010 C bt A, 00V rafa Dual ode) utho eyrds A, 00V rafa Dual ode, errpoon, minctor, ache ergy ted, itch wer pes, wer itch January 2000 File Number 2935.3 30A, 1000V Ultrafast Dual Diode Features The RURG30100CC is an ultrafast dual diode with soft

URG30100C

Abstract: RURG30100CC
Contextual Info: RURG30100CC Data Sheet January 2002 30A, 1000V Ultrafast Dual Diode Features The RURG30100CC is an ultrafast dual diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RURH30100CC

Abstract: URH30100C
Contextual Info: RURH30100CC Data Sheet January 2002 30A, 1000V Ultrafast Dual Diode Features The RURH30100CC is an ultrafast dual diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction.

RUR30100

Abstract: rur30100 Diode RURP30100
Contextual Info: RURP30100 Data Sheet January 2002 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted, epitaxial construction.

URH30100C

Abstract: RURH30100CC 1225AL diode 1000V 100a
Contextual Info: RURH30100CC Data Sheet Title UR 010 C bt A, 00V rafa Dual ode) utho eyrds A, 00V rafa Dual ode, errpoon, minctor, ache ergy ted, itch wer pes, wer January 2000 File Number 2932.3 30A, 1000V Ultrafast Dual Diode Features The RURH30100CC is an ultrafast dual diode with soft

igbt 1000v 30a

Abstract: RURG30100
Contextual Info: RURG30100 Data Sheet Title URG 100 bt A, 00V rafa ode) utho eyrds A, 00V rafa January 2000 3213.2 30A, 1000V Ultrafast Diode Features The RURG30100 is an ultrafast diode with soft recovery characteristics trr < 110ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

RHR30100

Abstract: RHR30100C RHRG30100CC RHR30
Contextual Info: RHRG30100CC Data Sheet January 2002 30A, 1000V Hyperfast Dual Diode Features The RHRG30100CC is a hyperfast dual diode with soft recovery characteristics trr < 65ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.

rur30100 Diode

Abstract: RUR30100 RURP30100
Contextual Info: RURP30100 Data Sheet January 2000 File Number 2877.4 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted,

RHR30100

Abstract: rhr30100 diode RHRP30100 HRP 100
Contextual Info: RHRP30100 Data Sheet Title HRP 100 bt A, 00V pert ode) utho rpoon, pert odes vache ergy ted, itch wer pes, wer itch File Number 3940.2 30A, 1000V Hyperfast Diode Features The RHRP30100 is a hyperfast diode with soft recovery characteristics trr < 65ns). It has half the recovery time of

RHR30100

Abstract: RHRP30100 rhr30100 diode
Contextual Info: RHRP30100 Data Sheet January 2002 30A, 1000V Hyperfast Diode Features The RHRP30100 is a hyperfast diode with soft recovery characteristics trr < 65ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RHRG30100

Contextual Info: RHRG30100 Data Sheet Title HR 010 bt A, 00V pert ode utho eyrds A, 00V pert ode, errpoon, pert odes vache ergy ted, itch wer pes, wer itch January 2000 File Number 3941.2 30A, 1000V Hyperfast Diode Features The RHRG30100 is a hyperfast diode with soft recovery

RHRG30100

Contextual Info: RHRG30100 Data Sheet January 2002 30A, 1000V Hyperfast Diode Features The RHRG30100 is a hyperfast diode with soft recovery characteristics trr < 65ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RHR30100

Abstract: RHR30100C RHRG30100CC
Contextual Info: RHRG30100CC Data Sheet Title HR 010 C bt A, 00V pert al ode) utho January 2000 File Number 3942.2 30A, 1000V Hyperfast Dual Diode Features The RHRG30100CC is a hyperfast dual diode with soft recovery characteristics trr < 65ns). It has half the recovery

25CPF

Abstract: 30CPF 30CPF10 30CPF12 30EPF 30EPF10 30EPF12
Contextual Info: Preliminary Data Sheet I2138 09/97 QUIETIR Series 30EPF. 30CPF. HV FAST SOFT RECOVERY RECTIFIER DIODE VF < 1.41V @ 30A trr = 95 ns VRRM 1000 to 1200V Description/Features The 30EPF. & 30CPF. soft recovery QUIETIR rectifier series has been optimized for combined

MOSFET 1000v 30a

Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
Contextual Info: OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package

60CPF10

Abstract: 60CPF12 60EPF10 60EPF12
Contextual Info: Preliminary Data Sheet I2130 07/97 QUIETIR Series 60EPF. 60CPF. HV FAST SOFT RECOVERY RECTIFIER DIODE VF < 1.2V @ 30A trr = 95 ns VRRM 1000 to 1200V Description/Features The 60EPF. & 60CPF. fast soft recovery QUIETIR rectifier series has been optimized for combined short

Contextual Info: APT10026JLL 1000V 30A 0.260Ω POWER MOS 7 R S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

igbt induction cooker

Abstract: FGA50N100 "induction cooker" circuit induction cooker circuit with IGBT induction heating cooker IC for induction cooker FGA50N100BNTDTU IGBT 600V 30A TO-3P IGBT 1000V 60A BNTD
Contextual Info: FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for