FAST RECOVERY BRIDGE RECTIFIER, 60A, 600V Search Results

Contextual Info: APT60DF60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IC = 60A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • • +

scr 8a 200v

Abstract: do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183
Contextual Info: Product Guide Power Semiconductors Microsemi more than solutions - enabling possibilities R TM Microsemi Power Semiconductors Contents Selection Military Qualified

Contextual Info: APT60GA60JD60 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Contextual Info: APT60DF60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IC = 60A @ Tc = 80°C Application •    Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~        

600v 30a IGBT

Abstract: Fast Recovery Bridge Rectifier, 60A, 600V apt30gt60 APT30GT60BR APT44GA60BD30 MIC4452 fast recovery diode trr Pt
Contextual Info: APT44GA60BD30 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

600v 30a IGBT

Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT30GT60BR APT54GA60BD30 MIC4452
Contextual Info: APT54GA60BD30 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

100A 300V IGBT

Abstract: Fast Recovery Bridge Rectifier, 60A, 600V
Contextual Info: APT60GA60JD60 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Fast Recovery Bridge Rectifier, 60A, 600V

Abstract: 600v 30a IGBT ultraFast Recovery Bridge Rectifier DIODE ED 15 Fast Recovery Rectifier, 300V Ultrafast Recovery Rectifier Bridge APT47GA60JD40 APT6017LLL MIC4452
Contextual Info: APT47GA60JD40 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

7512N

Abstract: Fast Recovery Bridge Rectifier, 60A, 600V 55-12NO7
Contextual Info: VBE 55-12NO7 ECO-PAC TM Single Phase Rectifier Bridge IdAV = 59 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 1200 1200 D Typ A N VBE 55-12NO7 K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM TVJ = 45°C VR = 0

IXYS DS

Contextual Info: VUE 75-12NO7 ECO-PAC TM Threee Phase Rectifier Bridge IdAV = 74 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED Preliminary Data VRSM VRRM V V 1200 1200 D Typ VUE 75-12NO7 A H N K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM

Contextual Info: VBE 55-12NO7 ECO-PAC TM Single Phase Rectifier Bridge IdAV = 59 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 1200 1200 D Typ A N VBE 55-12NO7 K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM TVJ = 45°C VR = 0

Contextual Info: APT60GA60JD60 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Contextual Info: VBE 55-12NO7 ECO-PAC TM Single Phase Rectifier Bridge IdAV = 59 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED Preliminary Data VRSM VRRM V V 1200 1200 D Typ A N VBE 55-12NO7 K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM

Fast Recovery Bridge Rectifier, 60A, 600V

Contextual Info: VUE 75-12NO7 ECO-PAC TM Threee Phase Rectifier Bridge IdAV = 74 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 1200 1200 D Typ VUE 75-12NO7 A H N K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM TVJ = 45°C VR = 0

Fast Recovery Bridge Rectifier, 60A, 600V

Abstract: APT60GA60JD60 APT60GT60BR MIC4452 fast recovery diode 1a
Contextual Info: APT60GA60JD60 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

bridge rectifier 24V AC to 24v dc

Abstract: 1N5408 smd diodes GSIB1560
Contextual Info: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4

triac mw 131 600d

Abstract: 65n06
Contextual Info: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717

Contextual Info: APT30DF60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IF = 30A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • • +

Contextual Info: APT47GA60JD40 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Contextual Info: APT47GA60JD40 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Contextual Info: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise

APT44GA60B

Abstract: APT44GA60BD30 APT44GA60SD30 MIC4452 SD30
Contextual Info: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Contextual Info: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT FEATURES APT44GA60SD30C TO -24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise

474J

Contextual Info: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low