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APT47GA60JD40 Datasheets (1)

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Microsemi

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
APT47GA60JD40		Microsemi	Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 47;	Original	PDF	249.89KB	9

APT47GA60JD40 Price and Stock

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Microchip Technology Inc


Microchip Technology Inc APT47GA60JD40 Transistor IGBT Chip N-Channel 600V 87A Screw Mount - Rail/Tube (Alt: APT47GA60JD40)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	APT47GA60JD40	Tube			20	1 - 10 - 100 $26.37 1000 $25.05 10000 $25.05	Buy Now
Newark	APT47GA60JD40	Bulk			250	1 - 10 - 100 - 1000 $24.20 10000 $24.20	Buy Now
Microchip Technology Inc	APT47GA60JD40	Tube		20 Weeks		1 $29.07 10 $29.07 100 $25.10 1000 $23.03 10000 $22.27	Buy Now
Onlinecomponents.com	APT47GA60JD40					1 $27.75 10 $25.50 100 $23.30 1000 $23.24 10000 $23.24	Buy Now
Master Electronics	APT47GA60JD40					1 $27.75 10 $25.50 100 $23.30 1000 $23.24 10000 $23.24	Buy Now

APT47GA60JD40 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Fast Recovery Bridge Rectifier, 60A, 600V Abstract: 600v 30a IGBT ultraFast Recovery Bridge Rectifier DIODE ED 15 Fast Recovery Rectifier, 300V Ultrafast Recovery Rectifier Bridge APT47GA60JD40 APT6017LLL MIC4452 Contextual Info: APT47GA60JD40 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	apt47ga60jd40 e145592 fast recovery bridge rectifier, 60a, 600v 600v 30a igbt +6ultrafast recovery bridge rectifier diode ed 15 fast recovery rectifier, 300v ultrafast recovery rectifier bridge apt6017lll mic4452	PDF
1119 GE Abstract: APT47GA60JD40 APT6017LLL MIC4452 Contextual Info: APT47GA60JD40 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	apt47ga60jd40 e145592 1119 ge apt6017lll +1mic4452	PDF
Contextual Info: APT47GA60JD40 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	apt47ga60jd40 e145592	PDF
Contextual Info: APT47GA60JD40 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	apt47ga60jd40 e145592 switchin27	PDF
SP6-P Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original	10f-a sp6-p n-channel mosfet 800v 50a to-247 smps 1000w igbt reference design +7drf1400 45a, 1200v n-channel npt series igbt aptes80da120c3g apt35dl120hj semiconductors cross reference igbt triple modules 100a 2000w mosfet power inverter	PDF
smps 1000W Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit Contextual Info: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain	Original	des691 10f-a smps 1000w 600v 300a igbt dc to dc boost converter +8sp6-p drf1400 smps 500w half bridge drf1300 1000w inverter mosfet 1000w solar power inverter apt30gt60brg 3000w inverter mosfet circuit	PDF
SOT-227 lead frame Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series Contextual Info: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic	Original	mil-prf-19500 so-268 o-220 o-247 +12o-264 ot-227 sot-227 lead frame 5kw smps full bridge s.m.p.s plad15kp apt10026l2fllg 5kw smps full bridge fast recovery rectifiers mx gp 043 smbx6.0a do215aa pfc 1.5kw 1.5ke series	PDF