FAST CYCLE RAM Search Results

lm814

Abstract: ID32-001
Contextual Info: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR

L-SIM-30-1

Contextual Info: SIEMENS 1 M X 8-Bit Dynamic RAM Module HYM 22100S-60/-70/-80 Advanced Information • 1 048 576 words by 8-bit organization • Fast access and cycle 60 ns access time 110 ns cycle time -60 70 ns access time 130 ns cycle time (-70 80 ns access time 150 ns cycle time (-80

Contextual Info: SIEMENS 1M X 9-Bit Dynamic RAM Module HYM 32200S/L-60/-70/-80 Advanced Information • 1 048 576 words by 9-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time 130 ns cycle time (-70 version)

M28C64

Abstract: PDIP28 PLCC32
Contextual Info: M28C64 PARALLEL 64K 8K x 8 EEPROM WITH SOFTWARE DATA PROTECTION FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:

Contextual Info: SIEMENS 1M X 64-Bit Dynamic RAM Module HYM 641010GS-60/-70 HYM 641020GS-60/-70 Preliminary Information • 1 048 576 words by 64-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time 130 ns cycle time (-70 version)

AT28C010-12LC

Abstract: AT28C010-12BC
Contextual Info: AT28C010 Features • • • • • • • • • • • Fast Read Access Time -1 2 0 ns Automatic Page W rite Operation Internal Address and Data Latches for 128 Bytes Internal Control Timer Fast Write Cycle Time Page W rite Cycle Tim e - 1 0 ms maximum

94500S

Contextual Info: SIEM ENS 4 M x9-B it Dynamic RAM Module HYM 94500S/-60/-70/-80 HYM 94500L/-60/-70/-80 Advanced Information • 4 194 304 words by 9-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time 130 ns cycle time (-70 version)

edo simm mm

Abstract: edo simm 20.32 mm 32 mbyte edo simm 20.32 mm
Contextual Info: SIEMENS 2M X 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 322005S/GS-50/-60 * SIMM modules with 2 097 152 words by 32-bit organization for PC main memory application * Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version)

IS41C82052-50J

Abstract: IS41C82052-50JI IS41C82052-50T IS41C82052-60J IS41C82052-60T
Contextual Info: IS41C82052 IS41LV82052 ISSI 2M x 8 16-MBIT DYNAMIC RAM WITH FAST PAGE MODE NOVEMBER 2000 FEATURES DESCRIPTION • Fast Page Mode Access Cycle • TTL compatible inputs and outputs • Refresh Interval: - 2,048 cycles/32 ms • Refresh Mode: RAS-Only,

74ABT244

Abstract: Q67100-Q2004
Contextual Info: 1M x 72-Bit Dynamic RAM Module ECC - Module HYM 721000GS-60/-70 Preliminary Information • 1 048 576 words by 72-bit ECC - mode organization • All inputs, outputs and clock fully TTL compatible • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version)

SOJ42

Contextual Info: SIEMENS HYM 321005S/GS-50/-60 1M X 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version Advanced Information * SIMM modules with 1 048 576 words by 32-bit organization for PC main memory applications * Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version)

Contextual Info: ISSI' IS41C16257 256K x 16 4-MBIT DYNAMIC RAM WITH FAST PAGE MODE ADVANCE INFORMATION AUGUST 1997 DESCRIPTION FEATURES • Fast access and cycle time • TTL compatible inputs and outputs • Refresh Interval: 512 cycles/8 ms Refresh Mode : RAS-Only, CAS-before-RAS (CBR),

Contextual Info: Order this document by MCM417400B/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M X 4 Advance Information 16M CMOS Dynamic RAM Family Fast Page Mode x4 2K Refresh MCM417400B Fast Page Mode 2048 Cycle Refresh The family of 16M dynamic RAMs is fabricated using sub-m icron CMOS

20S60

Contextual Info: SIEMENS 1 M X 32-Bit Dynamic RAM Module 2 M X 16-Bit Dynamic RAM Module HYM 321110/20S-60/-70/-80 Advanced Information • 1 048 576 words by 32-bit organization (alternative 2 097 152 words by 16-bit) • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version)

Contextual Info: Order this document by MCM218160B/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family Fast Page Mode, 1M x 16, and 1K Refresh MCM218160B Fast Page Mode 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.4 1 CMOS

511000B/BL-60

Abstract: hyb 511
Contextual Info: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 5110OOB/BJ/BZ-60/-70/-80 HYB 511000BUBJL/BZL-60/-70 Advanced Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 511000B/BL-60

Contextual Info: SIEMENS 1 M x 32-Bit Dynamic RAM Module 2 M x 16-Bit Dynamic RAM Module HYM 321110/20S-60/-70/-80 Advanced Information • 1 048 576 words by 32-bit organization (alternative 2 097 152 words by 16-bit) • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version)

Contextual Info: S IE M E N S 4M X 36-Bit Dynamic RAM Module HYM 364020S/GS-60/-70 Prelim inary Inform ation • 4 194 304 w ords by 36-Bit organization alternative 8 388 608 w ords by 18-bit • Fast access and cycle time 60 ns access tim e 110 ns cycle tim e (-60 version)

IS41LV16257B

Abstract: 41LV16257B PK13197T40
Contextual Info: IS41LV16257B JUNE 2007 256K x 16 4-MBIT DYNAMIC RAM WITH FAST PAGE MODE FEATURES DESCRIPTION • • • • The ISSI IS41LV16257B is 262,144 x 16-bit highperformance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as

303F

Abstract: DS1230W STK16C88-3
Contextual Info: STK16C88-3 32Kx8 AutoStore+ nvSRAM FEATURES DESCRIPTION • Fast 35 ns Read Access & R/W Cycle Time The Simtek STK16C88-3 is a 256Kb fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. • Directly Replaces Battery-Backed SRAM Modules such as Dallas/Maxim DS1230W

Contextual Info: SIEMENS 1M X 36-Bit Dynamic RAM Module 2M X 18-Bit Dynamic RAM Module HYM 361120GS-60/-70/-80 Advanced Inform ation • 1 048 576 w ords by 36-bit organization (alternative 2 097 152 words by 18-bit) • Fast access and cycle time 60 ns access time 1 1 0 n s cycle time (-60 version)

K4F640812D

Abstract: K4F660812D
Contextual Info: Industrial Temperature K4F660812D,K4F640812D CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) ar e

Contextual Info: VITELIC V 55C 100 FAMILY H IG H PERFORMANCE, LOW POWER, 1M x 1 B IT FAST PAGE MODE, CMOS DYN AM IC RAM ADVANCED , Features Description Separate I/O 60 ns RAS access time 45 ns Fast Page mode cycle time 512 refresh cycles each 8 ms Low power, CMOS standby current

Contextual Info: ISSI IS41LV16257B AUGUST 2004 256K x 16 4-MBIT DYNAMIC RAM WITH FAST PAGE MODE FEATURES DESCRIPTION • • • • The ISSI IS41LV16257B is 262,144 x 16-bit highperformance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as