FAJ 20 Search Results

Contextual Info: 43G 2271 Q 053b35 3Ô 5 « H A S H a rris S E M I C O N D U C T O R 2N7306D, 2N7306R £ faJ REGISTRATION PENDING Currently Available as FRE460 D, R, H . Radiation Hardened N-Channel Power MOSFETs April 1994 Features Package • 12A, 500V, RDS(on) = 0.410£2

GP2522

Abstract: GP2L20R GP2L20L GP2503 GP2524 NJL5143EL NJL5146EA NJL5147EL NJL5161K NJL5162K
Contextual Info: - 33 6 - « S g ít m g n % à’j î-5 n. ! T „ :-2 5 ’C , X. : \ -7 9 - m : 7', = 25C'i Vr ÎJ.f iir fr faj 'L Vu, I f vmA) !Q ' ¡V ) im A i Y' “Ci - 10k 5 45 25 - 2 0 '7 0 I f Ver. VvF. «t I f le t, II m ax !V ï im A i 1mA) typ (¿¿s1 150

Contextual Info: 1 2 3 X A Lochbild (board d r illin g s) a L Le L o c h e r d[( holes 00,05 Position — position aa + V' - 0,09 0,06 3 , 28 <D 5 26 I 5 4 6 7 i_n Kontakt-Typ _ » □ pin-type ii r D E F 2 i_ n A x cvi cvi ua— i - fAJ - A- (A ) +♦+»H+JH+H* n

ISR154-400

Abstract: 1sr151 3DZ61 isr139-400 1SR133-600 1SR139 1SR139-100 1SR139-200 1SR139-400 1SR149
Contextual Info: 114F 247 247 41 89J 114F 89J 89J 89J 89J 247 247 89J 89 J Í 14F 89J 89J 114F 89J 89J 25A 24B 113A 113A 89J ta. ¡X W faj tO LO LO 485F 485J 485 J 485 J 485F 19E 114C 114C 114C 42 05 01 0 1 S S * ffi Ï e àü m jj e <0 1 co *> a p £ e e c w \/ v ^ \/ t- t - V-. 1l_ L- L- U

Contextual Info: 1 A 2 X L oc h bi l d (board d r illin g s) 3 a L Le L o c h e r d[( holes 00,05 Position — position aa + V' - 0,09 0,06 3 , 28 5 26 I 5 4 6 7 i_n Kontakt-T yp pin-type ii -ABC D E F 2 i_n x cvi cvi ua— i - fAJ - A- (A ) +♦+»H+JH+H* n o e o o o o o -o o o o o e o o o o o o (A )—(A

Contextual Info: SK 20 DGD 065 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper Q$RS E$ E$XY QFRS C-L MNO$P 407,- %*8,23.-, -', .6.,+ C- L MN <VU? O$ E$XYL M ; E$0%&P *' L W &- C¥ Diode - Inverter, Chopper SEMITOP 3 3-phase bridge rectifier

h569-445

Abstract: H569-445 G1 FAJ 38 ED83127-30 ED83127-30 G-D T-83150-30 848258679 BDFB ED83127 G61A
Contextual Info: Secondary DC Power Distribution Bay H569-445 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Secondary DC Power Distribution Bay H569-445 Notice:

h569-445

Abstract: H569445 ED83127-30 G-D ED83127-30 H569 T-83150-30 Diode FAJ ED83019-50 schematic symbol circuit breaker panel ED83127
Contextual Info: Secondary DC Power Distribution Bay H569-445 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 5 May 2000 2000 Lucent Technologies Product Manual Select Code 157-005-104 Comcode 108405283 Issue 5 May 2000 Lucent Technologies Secondary DC Power Distribution Bay

ED83127-30

Abstract: BDFB ED83127 power distribution frame ED83127 fuse panel lineage 2000 BDFB FUSES KS21320 J85568D-1 blown fuse indicator with alarm h569-429
Contextual Info: Product Manual J85568D-1 Select Code 157-005-101 Comcode 106991391 Issue 5 March 1998 Lucent Technologies Lineage 2000 Eight-Load BDFB Battery Distribution Fuse Bay and Six-Load PDF (Power Distribution Frame) Notice: Every effort was made to ensure that the information in this

Diode FAJ 45

Abstract: Diode FAJ package
Contextual Info: 1 * GaAs INFRARED EMITTING DIODE IFTIELECTlllltS CQX14, CQX16 The CQX14/16 are 940nm LHDs in narrow angle, TQ-46 packages. SÊAHNÛ ST1332 N Good optica! to mechanical alignment SYMBOL INCHES MiN ' MAX. A 0b «>0 «•0, e * h i k L « .01« 209 255 .021 .230

FAJ 20 ESD

Abstract: FAJ 20 "IEC 61000" modem 2FAJ-M16R B0412
Contextual Info: NT *R oH S CO M PL IA Features • ■ ■ ■ ■ Applications Lead free as standard RoHS compliant* ESD protection Protects up to eight data lines Low insertion loss ■ ■ ■ Cell Phones PDAs and Notebooks GPS and SMART Cards 2FAJ-M16R – Integrated Passive & Active Device using MLP

FAJ 20 ESD

Abstract: B0412 F B0412 FAJ ESD FAJ 40 2FAJ-M16R
Contextual Info: NT *R oH S CO M PL IA Features • ■ ■ ■ ■ Applications Lead free as standard RoHS compliant* ESD protection Protects up to eight data lines Low insertion loss ■ ■ ■ Cell Phones PDAs and Notebooks GPS and SMART Cards 2FAJ-M16R – Integrated Passive & Active Device using MLP

FAJ 20 ESD

Abstract: "IEC 61000" modem 2FAJ-M16R B0412
Contextual Info: PL IA NT Features CO M • *R oH S ■ ■ ■ ■ Applications Lead free as standard RoHS compliant* ESD protection Protects up to eight data lines Low insertion loss ■ ■ ■ Cell Phones PDAs and Notebooks GPS and SMART Cards 2FAJ-M16R – Integrated Passive & Active Device using MLP

lineage rectifier tyco NP2500

Abstract: np2500* shelf application note NP2500 rectifier tyco NP2500 circuit diagram TYCO 596A RECTIFIER FAJ ESD tyco np1200 rectifier tyco NP2500 Galaxy protocol TYCO np1500 RECTIFIER
Contextual Info: Galaxy Rack-Mounted Vector Controller J85501M-1 Product Manual Select Code 167-792-117 Comcode 108993564 Issue 2 January 2008 Product Manual Select Code 167-792-117 Comcode 108993564 Issue 2 January 2008 Rack-Mounted Vector Controller J85501M-1 Notice: The information, specifications, and procedures in this manual are

114-18063

Abstract: 114-18063-1 114-18063-123 114-18063-12 PBT-GF 1-967642-1 MVQ30 DIN 16901-140 Tyco 967642
Contextual Info: 7 T H IS DRAWING IS U N P U B L I S H E D . VE RTRAUL ICHE UNVE ROE ER ENTL IEH TE ZEICHNUNG COPYRIGHT 2002 BY TYCO ELECTRONICS im R ELE A S E D FOR P U B LIC A T IO N FREI FUER V E R O E F F E N T L I C H U N G CORPORATION. ALL RIGHTS RESERVED. AI I F R F T H T F

RJ45 jack detail drawing

Abstract: RJ45 receptacle dimension drawing ECO-11-005033
Contextual Info: CO 7 THIS T D R A WI N G COPYRIGHT IS UNPUBLISHED. RELEASED ALL F OR 2 PUBLICATION Rlt,H Ti LOC REV I S I ONS D I ST AA 22 RESERVED. LTR DE S C R I P T I O N DWN DATE APVD 20APR11 RK HMR B2 REVISED PER ECO-11-005033 6 I I 6 I 5 I -2 & 6 I I 6 I 5 I -4 ONLY.

K791

Abstract: Diode FAJ package Diode FAJ Diode FAJ 45
Contextual Info: [ • 9 m iELECIIIIIU GaAs INFRARED EMITTING DIODE 1N626S The 1N6265 is a 940nm LED in a wide angle, TO-46 package. SEATING PILANE -Mh t 11 * Good optica! to m echanical alignment ST1331 e 8, INCHES MILUMETERS MOTES MIN. MAX MAX. MIN. .155 3 53 .616 .407 ,533

Contextual Info: • m m Chatsworth, CA M ic m m s e m i P rog ress P ow ered b y T echnology 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • Through Hole Package Capable of 600mWatts of Power Dissipation NPN General Purpose Amplifier

Contextual Info: KODENSHI 2SE CORP S S M S b Q fl D □ D Q Q 1 7 C1 5 • 4 S ' DIMENSIONS Unit: mm SD-101,102,103 l i , * # 7 1 4 .0 *1 4d:0.1 o^04o +toI o D FEATURES T t x- U j_ • a ta s itta u . 1. 2.54 5 ±0.1 S? o Uin o IS The SD-101,102,103 are position sensors for automatic fo­

Contextual Info: C2 Q21 / C2 Q2 2 S e r i e s 6.20mm p i t c h wire to wire c o n n e c t o r Assembly Layout 11.9-1 -43.8 REF.- I- Specifications: P oles 2 ~ 3 P oles P it c h b e tw e e n p oles 2.00m m R a t e d V o lt a g e 6 0 0 V AC,DC R ated C urrent 10A AWG # 1 4

ci 4502

Abstract: ECT180
Contextual Info: 4A 35V Tjw150V 7¿Zfr n íZ h FSQS04A035 Fully Molded similar to TO-220AC ttfl» Nihon Inter Electronics Corporation Specification. Construction '> 3 * Schottky Barrier Diode Application High Frequency Rectification I I MAXIMUM RATINGS Ta=25cC: Unless otherwise specified

1B06A

Abstract: B1326 2SC3353 2SC3353A LR35 npn vce 900v
Contextual Info: Power T ransistors t.R 3 2 flS 2 0 0 1 b 4 2 4 . 2SC3353, 2SC3353A 335 2SC3353, 2SC3353A Silicon NPN Triple-Diffused Junction Mesa Type Package Dimensions High Breakdown Voltage, High Speed Switching U nit I mm 4.4m ax. • Features • High speed switching

MOTOROLA 2N5179

Abstract: 2N5179 motorola 2n5179
Contextual Info: MOTOROLA SC XSTRS/R F 4bE b3 b 7 2 S 4 OGT HÜT b 4 • MOTb D MOTOROLA “T=3l-lS ■ SEMICONDUCTOR i TECHNICAL DATA 2N5179 The RF Line 4.5 dB @200 MHz HIGH FR E Q U E N C Y TR A N S IS TO R NPN SILIC O N NPN S ILIC O N R F HIGH F R E Q U E N C Y TR A N S IS TO R

2SA968-2SA968A

Abstract: 2SA968B 2SA968A transistor 2sC2238 2sa968 2sc2238 2SC2238 2SA968 3RE30 PNP 2SA968 transistor 2sa968b
Contextual Info: SILICON PNP E P IT A X IA L TR A N SIS TO R P C T P R O C ESS o mijmtam 1CL3MAJC. O M £ S * * ii4 § ffl O Power A m p lifie r O D riv e r • 1-7 • 2S C 2 2 3 8 ¿ a > - 7 ' U • Can Stag e A p p lic a tio n s . A m p lifie r A p p lic a tio n s . :