27JUN2003 Search Results
27JUN2003 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 70, 90ns PROGRAMMING TIME – 10 s per Byte/Word typical 35 MEMORY BLOCKS |
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m29w160etm29w160eb | |
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Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 70, 90ns PROGRAMMING TIME – 10 s per Byte/Word typical 35 MEMORY BLOCKS |
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m29w160etm29w160eb | |
856298Contextual Info: Preliminary Data Sheet Part Number 856298 1220 MHz SAW Filter Features • • • • • • • • • For broadband access applications Usable bandwidth 10 MHz Low loss High attenuation No impedance matching required for operation at 200 Ω Balanced operation |
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27-jun-2003856298 | |
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Contextual Info: Preliminary Data Sheet Part Number 856298 1220 MHz SAW Filter Features • • • • • • • • • For broadband access applications Usable bandwidth 10 MHz Low loss High attenuation No impedance matching required for operation at 200 Ω Balanced operation |
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27-jun-2003 | |
IEC61360-4
Abstract: EIA-724
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m29w160etm29w160ebtsop48iec61360-4+1 | |
MTA-156
Abstract: awg 78001
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OCR Scan |
27jun2003mta-156awg 78001 | |
M29W160ET
Abstract: M29W160E M29W160EB TFBGA48 27-Nov-2002
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m29w160etm29w160ebtsop48tfbga48+2 | |
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Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 35 MEMORY BLOCKS |
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m29w160etm29w160eb | |
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Contextual Info: Preliminary Data Sheet Part Number 856331 836.5/881.5 MHz SAW Duplexer Features • • • • • • • • • • For AMPS, CDMA and TDMA applications Usable bandwidth 25 MHz each band High Tx-Rx isolation Low insertion loss High attenuation Single-ended operation |
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15x4527-jun-2003 | |
114-18063
Abstract: 114-18063-1 114-18063-123 114-18063-12 PBT-GF 1-967642-1 MVQ30 DIN 16901-140 Tyco 967642
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OCR Scan |
20sep200227jun200320jul2005114-18063+8 | |
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Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY n SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read n ACCESS TIMES: 70, 90ns n PROGRAMMING TIME – 10 s per Byte/Word typical n 35 MEMORY BLOCKS |
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m29w160etm29w160eb | |
9668e
Abstract: SR 13009 BY284 455e 2246 09 06 232 6843 9826e MAR 618 transistor MS1324 RX3 0633
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sp3243084e03059e03000e03+11 | |
M29W160EB
Abstract: M29W160E M29W160ET TFBGA48 2aa 555
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m29w160etm29w160ebm29w160etfbga48+1 | |
v23612
Abstract: V23612-A802-G76 PEEK
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OCR Scan |
01aug200127jun200305mar200402mar2001+5 | |
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Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST J LTR DWN DATE DESCRIPTION RELEASED FJD0-0230-03 04JUL03 R EVIS ED FJD 0-0235-03 07JUL03 - 1 :$ APVD N.S Y.K N.S Y.K |
OCR Scan |
fjd0-0230-0304jul0307jul03ul157kir+5 | |