FAIRCHILD SEMICONDUCTOR MARKING INFORMATION Search Results

Contextual Info: LL4148 Small Signal Diode Cathode Band COLOR BAND MARKING 1ST BAND Black SOD80 The 1st Band indicates the cathode band the 1st Band indicates the cathod Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity Color Band Marking

Contextual Info: Advance Information FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description „ Max rDS on = 24 mΩ at VGS = -4.5 V, ID = -8 A This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.

Contextual Info: FJD5553 NPN Silicon Transistor Features • Fast Speed Switching • Wide Safe Operating Area • High Voltage Capability C 2 E 3 1 B Application DPAK Marking : J5553 1 • Electronic Ballast • Switch Mode Power Supplies 1. Base 2. Collector 3. Emitter Ordering Information

Contextual Info: FJX3904 NPN Epitaxial Silicon Transistor Feature 3 • General-Purpose Transistor 2 1 SC-70 1. Base 2. Emitter 3. Collector Package Marking and Ordering Information Device Item Device Marking Package Packing Method Qty pcs FJX3904TF S1A SC-70 TAPE & REEL

Contextual Info: FJD5555 NPN Silicon Transistor Features • Fast Speed Switching • Wide Safe Operating Area • High Voltage Capability C 2 E 3 1 B Application 1 • Electronic Ballast • Switch Mode Power Supplies Marking : J5555 1. Base 2. Collector 3. Emitter Ordering Information

Contextual Info: FLZ2V2 - FLZ39V Zener Diodes Cathode Band Color Band Marking Tolerance A B C D SOD80 1st Band Black Black Black Black Ordering Information Device Marking Device Color Band Marking Refer to Per Tolerance Product table list Package Reel Size Tape Width Quantity

marking 03s

Contextual Info: Advance Information FDN7603S N-Channel PowerTrench SyncFETTM 30 V, 4.8 A, 43 m: Features General Description „ Max rDS on = 43 m: at VGS = 10 V, ID = 4.8 A The FDN7603S has been designed to minimize losses in power conversion application. Advancements in both silicon and

Contextual Info: Advance Information FDN7603S N-Channel PowerTrench SyncFETTM 30 V, 4.8 A, 43 m: Features General Description The FDN7603S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest

Contextual Info: BCP53 PNP General-Purpose Amplifier Description 4 This device is designed for general-purpose mediumpower amplifiers and switching circuits for collector currents to 1.0 A. Sourced from process 79. 3 2 1 SOT-223 1. Base 2,4. Collector 3. Emitter Ordering Information

12SnOFC

Abstract: BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent
Contextual Info: Date Created: 1/9/2004 Date Issued: 2/13/2004 PCN # 20040204 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will

FZT749

Contextual Info: FZT749 PNP Low Saturation Transistor Description 4 These devices are designed with high-current gain and low saturation voltage with collector currents up to 3 A continuous. 3 2 1 SOT-223 1. Base 2,4. Collector 3. Emitter Ordering Information Part Number Marking

MB10S

Contextual Info: MB10S 0.5 A Bridge Rectifiers Features • Low-Leakage + • Surge Overload Rating: 35 A Peak - • Ideal for Printed Circuit Board • UL Certified: UL #E111753 and E326243 SOIC-4 Polarity symbols molded or mark on body Ordering Information Part Number Marking

Contextual Info: MB1S - MB8S 0.5 A Bridge Rectifiers + Features - • Low-Leakage • Surge Overload Rating: 35 A peak • Ideal for Printed Circuit Board SOIC-4 • UL Certified: UL #E111753 and E326243 Polarity symbols molded or mark on body Ordering Informations Part Number

Contextual Info: MMBTA55 PNP General-Purpose Amplifier Description C This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from process 73. E SOT-23 Mark: 2H B Ordering Information Part Number Marking Package Packing Method

Contextual Info: BAT54HT1G Schottky Barrier Diodes Connection Diagram 1 1 A2 2 SOD-323 2 Ordering Information Part Number Marking Package Packing Method BAT54HT1G A2 SOD-323 2L Tape and Reel Absolute Maximum Ratings 1 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

Contextual Info: BCX17 PNP General-Purpose Amplifier Description 3 This device is designed for general-purpose amplifiers and switching applications at currents to 0.5 A. Sourced from process 78. 2 1 SOT-23 Mark: T1 1. Base 2. Emitter 3. Collector Ordering Information Part Number

Contextual Info: FSB660A PNP Low Saturation Transistor Description C These devices are designed with high-current gain and low saturation voltage with collector currents up to 2 A continuous. E B SuperSOT -3 SOT-23 Ordering Information Part Number Marking Package Packing Method

Contextual Info: RS1A - RS1M Fast Rectifiers Features • Glass-Passivated Junction • For Surface Mounted Applications • Built-in Strain Relief, Ideal for Automated Placement SMA/DO-214AC • UL Certified: Certificate # E326243 COLOR BAND DENOTES CATHODE Ordering Information

BD135

Contextual Info: BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 1. Emitter TO-126 2.Collector 3.Base Ordering Information Part Number Marking BD13516S BD1356STU

Contextual Info: BU406 / 406H / 408 NPN Epitaxial Silicon Transistor Features • High-Voltage Switching • Use In Horizontal Deflection Output Stage 1 1.Base TO-220 2.Collector 3.Emitter Ordering Information Part Number Marking Package Packing Method BU406 BU406 TO-220 3L

Contextual Info: RS1A - RS1M Fast Rectifiers Features • Glass-Passivated Junction • For Surface Mounted Applications • Built-in Strain Relief, Ideal for Automated Placement SMA/DO-214AC • UL Certified: Certificate # E326243 COLOR BAND DENOTES CATHODE Ordering Information

Contextual Info: KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Marking Package Packing Method KSA1015GRTA

Contextual Info: KST42 / KST43 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST42MTF 1D SOT-23 3L Tape and Reel KST43MTF 1E SOT-23 3L Tape and Reel

Contextual Info: BD433/435/437 NPN Epitaxial Silicon Transistor Features • Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base Ordering Information Part Number Marking Package Packing Method