FDME910PZT Search Results
FDME910PZT Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDME910PZT | Fairchild Semiconductor | FETs - Single, Discrete Semiconductor Products, MOSFET P CH 20V 8A MICROFET | Original | 7 |
FDME910PZT Price and Stock
onsemi FDME910PZT_PFDME910PZT-P |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDME910PZT_P | 142,245 | 918 |
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| FDME910PZT_P | 5,000 | 918 |
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| FDME910PZT_P | 4,442 | 918 |
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onsemi FDME910PZT-PPower Field-Effect Transistor, 8A I(D), 20V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDME910PZT-P | 151,687 | 1 |
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Buy Now | ||||||
FDME910PZT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
FDME910
Abstract: B175 FDME910PZT
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Original |
fdme910pztfdme910b175 | |
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Contextual Info: FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener |
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fdme910pzt | |
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Contextual Info: Advance Information FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description Max rDS on = 24 mΩ at VGS = -4.5 V, ID = -8 A This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. |
Original |
fdme910pzt | |
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Contextual Info: FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener |
Original |
fdme910pzt |