Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FDME910 Search Results

    FDME910 Datasheets (1)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDME910PZT
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET P CH 20V 8A MICROFET Original PDF 7
    SF Impression Pixel

    FDME910 Price and Stock

    onsemi

    onsemi FDME910PZT_P

    FDME910PZT-P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical () FDME910PZT_P 142,245 918
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.38
    • 10000 $0.34
    Buy Now
    FDME910PZT_P 5,000 918
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.38
    • 10000 $0.34
    Buy Now
    FDME910PZT_P 4,442 918
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.38
    • 10000 $0.34
    Buy Now

    onsemi FDME910PZT-P

    Power Field-Effect Transistor, 8A I(D), 20V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FDME910PZT-P 151,687 1
    • 1 -
    • 10 -
    • 100 $0.36
    • 1000 $0.30
    • 10000 $0.27
    Buy Now

    FDME910 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDME910

    Abstract: B175 FDME910PZT
    Contextual Info: FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener


    Original
    fdme910pztfdme910b175 PDF

    Contextual Info: FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener


    Original
    fdme910pzt PDF

    Contextual Info: Advance Information FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description „ Max rDS on = 24 mΩ at VGS = -4.5 V, ID = -8 A This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.


    Original
    fdme910pzt PDF

    Contextual Info: FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener


    Original
    fdme910pzt PDF

    Contextual Info: Doc No. TA4-EA-06224 Revision. 1 Product Standards AN32258A http://www.semicon.panasonic.co.jp/en/ INTEGRATED WIRELESS POWER SUPPLY RECEIVER, Qi WIRELESS POWER CONSORTIUM COMPLIANT FEATURES DESCRIPTION  Integrated Wireless Power Receiver Solution  WPC Ver. 1.1 Compliant


    Original
    ta4-ea-06224an32258a48easures PDF

    Contextual Info: Product Standards Tentative Ver.1.11 AN32258A http://www.semicon.panasonic.co.jp/en/ INTEGRATED WIRELESS POWER SUPPLY RECEIVER, Qi WIRELESS POWER CONSORTIUM COMPLIANT FEATURES DESCRIPTION  Integrated Wireless Power Receiver Solution  WPC Ver. 1.1 Compliant


    Original
    an32258a PDF