FAIRCHILD MICROWAVE POWER TRANSISTOR Search Results

induction heating ic

Abstract: SGL60N90DG3YD induction heating saturation
Contextual Info: SGL60N90DG3 General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These

FGL40N150DTU

Contextual Info: FGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A

Contextual Info: SGF15N90D General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These

igbt 1000v 10A

Contextual Info: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche

igbt induction cooker

Abstract: induction heating cooker FGA50N100BNTD2 induction cooker circuit with IGBT induction cooker application notes induction cooker fairchild induction cooker fairchild induction heater induction cooker component induction heater
Contextual Info: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche

HMC415

Abstract: microwave mosfet
Contextual Info: MICROWAVE CORPORATION v00.0103 A SIMPLE CMOS POWER CONTROL CIRCUIT FOR THE HMC408LP3 AMPLIFIER General Description The HMC408LP3 is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor HBT Power Amplifier MMIC, which offers +30 dBm P1dB.

HMC408LP3

Abstract: HMC408 HMC415 FDC6323L HMC314 HMC326MS8G HMC327MS8G HMC406MS8G HMC407MS8G HMC413QS16G
Contextual Info: v00.0103 HMC408LP3 PRODUCT NOTE A Simple CMOS Power Control Circuit for The HMC408LP3 Amplifier General Description The HMC408LP3 is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor HBT Power Amplifier MMIC, which offers +30 dBm P1dB.

SGL40N150

Abstract: igbt 40a 600v
Contextual Info: SGL40N150 General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150 is designed for induction heating applications. • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A

SGL40N150

Contextual Info: SGL40N150 General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150 is designed for induction heating applications. • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A

SGF15N90D

Contextual Info: SGF15N90D General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These

fairchild induction heater

Abstract: SGL60N90DG3
Contextual Info: SGL60N90DG3 General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These

FGL40N150D

Contextual Info: FGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A

SGL40N150D

Contextual Info: SGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A

Contextual Info: SGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A

Contextual Info: Wideband, Microwave, 0.5W Monolithic Amplifier 50Ω AVM-273HP+ 13 to 26.5GHz The Big Deal • • • • • Wideband 13 – 26.5 GHz Output power up to +27dBm Excellent directivity, 43 dB typ. @ 20 GHz Unconditionally stable Excellent gain flatness, ±1 dB

Contextual Info: Wideband, Microwave, 0.5W Monolithic Amplifier 50Ω AVM-273HP+ 13 to 26.5GHz The Big Deal • • • • • Wideband 13 – 26.5 GHz Output power up to +27dBm Excellent directivity, 43 dB typ. @ 20 GHz Unconditionally stable Excellent gain flatness, ±1 dB

Contextual Info: Wideband, Microwave, 0.5W Monolithic Amplifier 50Ω AVM-273HP+ 13 to 26.5GHz The Big Deal • • • • • Wideband 13 – 26.5 GHz Output power up to +27dBm Excellent directivity, 43 dB typ. @ 20 GHz Unconditionally stable Excellent gain flatness, ±1 dB

ECJ-1VB1H102K

Abstract: RMPA0966
Contextual Info: PRELIMINARY RMPA0966 i-Lo WCDMA Band V Power Amplifier Module tm Features General Description • 42% CDMA/WCDMA efficiency at +28dBm Pout The RMPA0966 Power Amplifier Module PAM is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting Cellular CDMA/WCDMA/HSDPA,

Solder Paste, Indium 5.8

Abstract: ECJ-1VB1H102K RMPA1966 SN63 SN96 grm39
Contextual Info: PRELIMINARY RMPA1966 i-Lo tm WCDMA Band II Power Amplifier Module Features General Description • 40% WCDMA efficiency at +28.5dBm Pout The RMPA1966 Power Amplifier Module PAM is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting UMTS/WCDMA/HSDPA

GTO MODULE

Abstract: ECJ-1VB1H102K SN63 SN96 Solder Paste, Indium 5.8
Contextual Info: PRELIMINARY RMPA1766 i-Lo tm WCDMA Band IV Power Amplifier Module Features General Description • 40% WCDMA efficiency at +28dBm Pout The RMPA1766 Power Amplifier Module PAM is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting UMTS/WCDMA/HSDPA

TOp-264 vg

Contextual Info: Wideband, Microwave, 0.5W Monolithic Amplifier 50Ω AVM-273HP+ 13 to 26.5GHz The Big Deal • • • • • Wideband 13 to 26.5 GHz Output power up to +27dBm Excellent directivity, 43 dB typ. @ 20 GHz Unconditionally stable Excellent gain flatness, ±1 dB

Contextual Info: Wideband, Microwave, 0.5W Monolithic Amplifier 50Ω AVM-273HP+ 13 to 26.5GHz The Big Deal • • • • • Wideband 13 to 26.5 GHz Output power up to +27dBm Excellent directivity, 43 dB typ. @ 20 GHz Unconditionally stable Excellent gain flatness, ±1 dB

ATC550L104KT

Contextual Info: Wideband, Microwave, 0.5W Monolithic Amplifier 50Ω AVM-273HP+ 13 to 26.5GHz The Big Deal • • • • • Wideband 13 to 26.5 GHz Output power up to +27dBm Excellent directivity, 43 dB typ. @ 20 GHz Unconditionally stable Excellent gain flatness, ±1 dB

GRM39Y5V104Z16V

Contextual Info: February 2005 RMPA1963 i-Lo US-PCS CDMA, CDMA2000-1X and WCDMA Power Amplifier Module Features General Description • 38% CDMA/WCDMA efficiency at +28 dBm Pout ■ 14% CDMA/WCDMA efficiency 85 mA total current at +16 dBm Pout ■ Linear operation in low-power mode up to +19 dBm