FAILURE TEST DATA Search Results

Novacap

Abstract: mtbf 90 2004 FAILURE
Contextual Info: Class II 200ºC Operational Life Test Data Failure Rates at 90% Confidence Test Conditions: Time Period: Number of Capacitors Tested: Testing Location: Results: Conversion Factors: 2000hrs. @ 200ºC. Applied voltage is dependent on capacitors tested. March 2004 to July 2007.

SOP 8 200MIL

Contextual Info: TOSHIBA [13] Reliability Data 13. Reliability Data Intrinsic Failure Rate Estimation from Life Test Results 1995/3Q-1996/2Q Data Test Condition :Ta = 125°C, Vcc = 6.0V Operation 1000Hrs. Device 4120 Ta = 60°C Equivalent Device Hours Ea = 0.8V 391.15x106

Contextual Info: Cell-Based IC Metastability Evaluation Background Test Results The failure of synchronisation when latching asynchronous signals has been investigated on a test IC using StandardLib and PadLib2 cells. The evaluation presented in this Application Note is based on measurements conducted

AEC-Q100-004

Abstract: JESD22-A113 HDJD-J822
Contextual Info: HDJD-J822 Color Management System Feedback Controller Data Sheet Description Failure Rate Prediction The following cumulative test results have been obtained from testing performed at Avago Technologies in accordance with the latest revision of JEDEC. Avago

Optical Encoder Modules

Abstract: HEDL-5500 HEDL-5600 HEDL-6500
Contextual Info: HEDL-5500, HEDL-5600, HEDL-6500, HEDL-9x00 Series Motion Sensing Products, Optical Encoder Modules Reliability Data Sheet Description Failure Rate Prediction The following cumulative test results have been obtained from testing performed at Avago Technologies Malaysia

JESD-B-102

Abstract: AVAGO DIP JESD-A102 JA113
Contextual Info: ACPL-M71U, ACPL-M72U Wide Operating Temperature High Speed, Low Power CMOS Digital Optocoupler with R2CouplerTM Isolation Reliability Data Sheet Description Definition of Failure The reliability data shown includes Avago Technologies reliability test data from the reliability qualification done

MIL-STD-883 Method 3015.7

Abstract: EIA-583 H820 EIA 583
Contextual Info: VISHAY Vishay Telefunken Life Test Data for IRDC Modules Technology includes : TFDS3xxx, TFDx4xxx, TFDx6xxx Predicted failure rate (FITs), based on accelerated life testing At 60% upper confidence level derated to 55°C assuming the activation energy to be 0.8 eV.

MM-JESD22-A115-A

Abstract: JESD22-A115 AEDR-8400-140 AEDR-8400-142 HBM-JESD22-A114D
Contextual Info: AEDR-8400-140 and AEDR-8400-142 Reflective Surface Mount Optical Encoder Reliability Data Sheet Description Failure Rate Prediction The following cumulative test results have been obtained from testing performed at Avago Technologies Malaysia in accordance with the latest revisions of JEDEC Standard.

IRFP460Z

Abstract: IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205
Contextual Info: Switch and I/O Reliability Report March, 2003 International Rectifier Table Of Contents 1.0 Introduction 2.0 Environmental Stress And Failure Modes 3.0 The Matrix Qualification Philosophy 4.0 Summary Of Long Term Reliability Test 4.1 Transistors 4.1.1 HTRB

JESD22-B104-B

Abstract: JESD22-b103 JESD22-B104 iP1201 transistor Amp 2054 equivalent C1173 JESD22-B103B JESD22-B103-B
Contextual Info: International Rectifier Reliability Report for iPOWIR Family iP1001, iP1201, iP1202, iP2001, iP2002, iP2003 20-Apr-04 iPOWIR Family Reliability Testing Summary 4/20/2004 1 . HTOL - High Temperature Operating Life Test Failure Rate Device Number Conditon Samples

HEDS-5500

Abstract: HEDS-6500 HEDS-9000
Contextual Info: HEDS-5500, HEDS-6500 and HEDS-9000, 9100, 9200 Series Motion Sensing Products, Optical Encoder Modules Reliability Data Description Failure Rate Prediction The following cumulative test results have been obtained from testing performed at Avago Technologies in accordance with the latest revision of MIL- STD-883.

2005 Z

Abstract: R 753 tcr-125 TCR55 S10K 22-315
Contextual Info: CHINA 752 & 753 SERIES QUALIFICATION DATA FOR THE YEAR 2005 RES TEST BL# LET VALUE MIN MAX AVG RES QTY PARTS TOTAL PER PART TESTED FAILURE RESISTORS REPORT QTR PARTS RES FAILED FAILED PART SERIES YEAR NUMBER IN RES 19747 D 100/1K - - - 12 80 - 1 752

XAPP077

Abstract: xilinx MTBF 1014 1987 flip-flop IEEE Standard 1014-1987 XC7000 XC7300 XC9500
Contextual Info:  Metastability Considerations XAPP077 January, 1997 Version 1.0 Application Note Summary Metastability is unavoidable in asynchronous systems. However, using the formulas and test measurements supplied here, designers can calculate the probability of failure. Design techniques for minimizing metastability are also provided.

Contextual Info: N AMER PHILIPS/DISCRETE fl7D D bbS3T31 COOTS47 5 11 . T -01-01 LID RELIABILITY DATA | UNIT HOURS #O F FAILURES FAILURE RATE* 1483 1,475,840 2 .21 1520 1,519,000 .06 TEMPERATURE # F UNITS Operating Life T ,= 150°C Storage Life Ta = 150°C ' test • . l| §

LSI402Z

Abstract: LSI402ZX dB06 Internal ROM Booting
Contextual Info: Troubleshooting Guide for LSI402Z/ZX-Based Systems Application Note Contents 1 2 3 DB06-000269-00 Introduction What to look for after reset 2.1 Clock output 2.2 Internal booting - self test 2.3 External booting Possible failure symptoms and causes 3.1 Applying power

xilinx MTBF

Abstract: XC7000 XC7300 XC9500 IEEE Standard 1014-1987
Contextual Info:  Metastability Considerations XAPP 077 - January, 1997 Version 1.0 Application Note Summary Metastability is unavoidable in asynchronous systems. However, using the formulas and test measurements supplied here, designers can calculate the probability of failure. Design techniques for minimizing metastability are also provided.

LT6078

Abstract: LT6079 R513 lt607
Contextual Info: RELIABILITY DATA LT6078 / LT6079 8/21/2006 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE NEWEST DATE CODE K DEVICE HOURS 1 AT +125°C PLASTIC DIP 77 0533 0533 77 (1) Assumes Activation Energy = 1.0 Electron Volts (2) Failure Rate Equivalent to +55°C, 60% Confidence Level = 14.23 FITS

SMD 43A

Abstract: IRHNB7260 IRHNB8260
Contextual Info: PD - 91798 IRHNB7260 IRHNB8260 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω, MEGA RAD HARD HEXFET 200Volt, 0.070Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation test

IRH7054

Abstract: IRH8054
Contextual Info: PD - 90883A IRH7054 IRH8054 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 60Volt, 0.025Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test

V15000

Abstract: IRHNB7Z60 IRHNB8Z60
Contextual Info: PD - 91754 IRHNB7Z60 IRHNB8Z60 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω, MEGA RAD HARD HEXFET 30Volt, 0.009Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation test

IRHM7260

Abstract: IRHM8260
Contextual Info: PD - 91332C IRHM7260 IRHM8260 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 200Volt, 0.070Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test

SF2400

Contextual Info: P rel i m i n a r y P R O D U C T • AES-256 & 128 automatic double encryption at the drive level ensures the best secure data protection • Outstanding Predictive Failure Analysis available through Media Health Test • Supports the latest 2xnm/2ynm MLC flash memory with Toggle/

Contextual Info: P rel i m i n a r y P R O D U C T • AES-256 & 128 automatic double encryption at the drive level ensures the best secure data protection • Outstanding Predictive Failure Analysis available through Media Health Test • Supports the latest 2xnm/2ynm MLC flash memory with Toggle/

IRHM7264SE

Contextual Info: PD - 91393D IRHM7264SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 250Volt, 0.11Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test