F62 CURRENT TRANSISTOR Search Results

LDTD123YLT1G

Abstract: f62 current transistor marking F62 f62 transistor
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTD123YLT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an

f62 current transistor

Contextual Info: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors Pb-Free package is available FFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow positive biasing of the

Contextual Info: 8050S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * Complement to 8550S * Collector C urrent: Ic=500mA * Collector D issipation: Pc=225mW Tc=25°C ABSOLUTE MAXIMUM RATINGS a t Tan*-25°C

marking F62

Abstract: 100MHZ DTD123Y
Contextual Info: DTD123Y Bias Resistor Transistor NPN Silicon COLLECTOR 3 P b Lead Pb -Free R1 1 BASE 3 1 R2 2 EMITTER 2 SOT-23 Absolute maximum ratings (TA = 25ºC) Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature

marking F62

Abstract: M7025 f62 current transistor
Contextual Info: KSA1182 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to SOT-23 KSC2859 ABSOLUTE MAXIMUM RATINGS TA“ 2 5 t C haracteristic Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

K 4005 transistor

Abstract: k5012 f62 current transistor
Contextual Info: Transistors Digital transistors built-in resistors DTD123YK / DTD123YS •F e a tu re s 1) B uilt-in bias resistors enable the configuration of an inverter circuit without connecting external input re sistors (see the e quivalent cir­ cuit). 2) The bias resistors consist of thinfilm resistors with complete isola­

transistors marking ND

Abstract: marking F62
Contextual Info: DTD123YK Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm • • • • • available in an SMT3 (SMT, SC-59) package package marking: DTD123VK; F62 a built-in bias resistor allows inverter circuit configuration without external

Contextual Info: SILICON TRANSISTOR FA1L3Z M EDIUM SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • in m N lim «t«rs Resistor Built-in TYPE B o— \W ~ - R i = 4.7 k n *1 • Complementary to FN1L3Z ABSOLUTE M AXIM U M RATINGS

Contextual Info: Transistors Digital transistors built-in resistors DTD123YK / DTD123YS • F e a tu re s •E x te rn a l dim ensions (Units: mm) 1 ) B u ilt-in bias re s is to rs e n a b le the con fig u ra tio n of an inverter circu it DTD123YK 1;1+0-2 - 0.1 w ithout con ne cting external input

DTD123Y

Abstract: DTD123YK DTD123YS SC-72 T146
Contextual Info: DTD123YK / DTD123YS Transistors Digital transistors built-in resistors DTD123YK / DTD123YS zExternal dimensions (Unit : mm) 2.9±0.2 DTD123YK 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (2) 0 to 0.1 2.8±0.2 1.6 +0.2 −0.1 (1) ROHM : SMT3 EIAJ : SC-59 +0.1

Contextual Info: DTD123YK / DTD123YS Transistors Digital transistors built-in resistors DTD123YK / DTD123YS zExternal dimensions (Unit : mm) 2.9±0.2 DTD123YK 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (2) 0 to 0.1 2.8±0.2 1.6 +0.2 −0.1 (1) ROHM : SMT3 EIAJ : SC-59 +0.1

Contextual Info: DTD123YK NPN 500mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC 50V 500mA 2.2kW 10kW IC(MAX.) R1 R2 SMT3 OUT IN GND DTD123YK SOT-346 (SC-59) lFeatures 1) Built-In Biasing Resistors lInner circuit 2) Built-in bias resistors enable the configuration of

T146

Abstract: DTD123YK
Contextual Info: Digital transistors built-in resistors DTD123YK zDimensions (Unit : mm) 2.9 DTD123YK 1.1 0.4 0.8 (3) (2) (1) 0.95 0.95 0.15 1.9 ROHM : SMT3 EIAJ : SC-59 0.3Min. zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors

Contextual Info: SILICON TRANSISTOR 2SA1608 HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FEA TU RES PACKAGE DIMENSIONS in m illim e te rs • High fT : f T =400 MHz • Complementary to 2SC3739 2 . 110.1 1 .2 5 ± 0 .1 A B S O L U T E M AXIM UM R A T IN G S

transistor irf620

Contextual Info: IRF620 Data Sheet Title F62 bt 0A, 0V, 00 m, June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: MITSUBISHI TRAN SISTOR M O D U LES ! HIGH POWER SWITCHING U SE INSULATED TYPE f QM75DY-HB I j QNI750Y-HB • Ic • Vcex Collector current.75A Collector-emitter voltage. 600V • hFE DC current gain. 750

Contextual Info: Transistors Digital transistors built-in resistors DTD123YK / DTD123YS •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Built-in bias resistors en ab le the configuration of an inverter circuit 2.9±0.2 DTD123YK + 1 1 0.2 ; -0.1 1.9+0.2 without connecting external input

2ss9014

Abstract: ss8015 A 671 transistor SS9013 SS9014 U007 transistor ss9014 SS9012 T-31-21 50nr
Contextual Info: IM E D SAMSUNG SEM ICONDUCTOR . INC I 7*^4142 " SS9012 4 I 00073*1 T - f i ~ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • High total power dissipation: PT=825mW High Collector Current. (Ic = -500mA) Complementary to SS9013

tico 732

Abstract: hengstler tico 732 pulse counter hengstler Danaher 66266-3 Hengstler relay F211 F221 F222 1310301
Contextual Info: Benutzerhandbuch User Manual Zweikanaliger Multifunktionszähler Bidirectional Multifunction-Counter tico 732 0. 1. 1.1 1.2 1.3 1.4 2. 2.1 2.2 2.3 2.4 2.5 3. 3.1 3.2 3.3 4. 4.1 4.2 4.3 4.4 4.5 5. 5.1 5.2 5.3 5.4 5.5 6. 6.1 6.2 6.3 6.4 6.5 7. 8. Sicherheitshinweise .

E78996 rectifier module

Abstract: irfk4h350 IRFK4H351
Contextual Info: HE D I 4ÛS5452 OOQTGlc? 4 | IN TERN ATION AL Data Sheet No. PD-9.448B R EC TIFIER T-39-27 INTERNATIONAL RECTIFIER RECOGNIZED I « R HEXPAK POWER MODULE IRFK4H3SO IRFK4H351 File no E78996 Isolated Base Power HEXFET Parallel Assembly 400 Volt, 75 mil HEXPAK

2920A

Abstract: NS2N A2JA 2N2920A 2N2913 2N2920
Contextual Info: mmm types 2N2813 t h r u 2N29?o mZSMA 2N2972 THRU 2N2979 DUAL N P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 1 1 1 6 5 . M A R C H 1969 A BR O A D F A M IL Y OF D U A L T R A N S IS T O R S R ECO M M EN D ED FO R Differential Amplifiers High-Gain, Low-Noise, Audio Amplifiers

equivalent transistor TT 3034

Abstract: transistor TT 3034 A771 TRANSISTOR transistor b722 124e transistor Transistor b865 tc 144e DTC1132 B718 TRANSISTOR 124E
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

B861 transistor

Abstract: equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR
Contextual Info: R OJ N m DTA/DTB/DTC/DTD I DIGITAL TRANSISTOR APPLICATION: • j EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEA T U R ES; • R ep laces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

transistor b722

Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded