F55N Search Results

Contextual Info: R evisio n s D e s c rip tio n /A p p ro v e d /D a te A p p ro v e d 1. D o ub le D -fla ts added to rear s h o u l d e r / E . K . / 03-10-04 2. B arrel length ch an ge d from 26m m to 3 0m m / E.K. / 03-23-04 C h e cke d Tolerances 1- 20= + /- 0.2 20-30=+/-0.3

N343632LTQ

Abstract: N3436 N343632L F55N
Contextual Info: CMOS NKK SRAM Low Voltage Fast Synchronous with Burst Counter N343632L 2M-BIT 64K X 32 _ -K. -M. -N • Features • C M O S S R A M organ ized as 6 5 ,5 3 6 X 32b its • S in g le + 3 .3 V P ow er Su p ply • Fast C lo ck A c c e ss tim e : 5 .5 n s/1 0 0 M H z , 6 n s/9 0 M H z ,

55NF06

Abstract: P55NF06 P55nf*06 Mosfet P55NF06
Contextual Info: 55NF06 Pb Free Plating Product 55NF06 Pb N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET „ 12 DESCRIPTION Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low