F5045 Search Results

F5045P

Abstract: F5045
Contextual Info: http://www.fujisemi.com F5045P FUJI High-side IPS High-side Intelligent Power Switch Features Outline Drawings [mm] • Low minimum operating voltage min.3V • Low stand by current • Two input terminals (for on state hold) • Over current detection • Over temperature shutdown

F5045P

Abstract: IPS Electronic Circuit Diagram
Contextual Info: http://www.fujisemi.com F5045P FUJI High-side IPS High-side Intelligent Power Switch Features Outline drawings [mm] • Low minimum operating voltage min.3V • Low stand by current • Two input terminals (for on state hold) • Over current detection • Over temperature shutdown

F50450

Contextual Info: PRODUCT H" 9 1 6 2 2 -Y X X H (DIM‘‘D‘‘) 9 1 6 2 2 -4 X X 5 pm 9 1 6 2 2 -3 X X 0 .7 5 p m / PLATING COOE / 2 0 0 p “ SnPb MIN. OVER N! MIN. SnPb OVER Ni 30 p " Au MIN. OVER Ni MIN. SnPb OVER Ni 9 1 6 2 2 -3 X X H SOLDER TAIL WITH HOUSING HIGH TEMP.

F5045

Contextual Info: FDZ5045N 30V N-Channel Logic Level PowerTrench BGA MOSFET General Description Features Combining Fairchild’s 30V PowerTrench process with state of the art BGA packaging, the FDZ5045N minimizes both PCB space and RDS ON . This BGA MOSFET embodies a breakthrough in packaging

Contextual Info: S E M IC O N D U C T O R ADVANCE INFORMATION tm FDZ5045N 30V N-Channel Logic Level PowerTrench BGA MOSFET General Description Features Combining Fairchild’s 30V PowerTrench process with state of the art BGA packaging, the FDZ5045N minimizes both PCB space and R DS on . This BGA

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

F5044

Abstract: XCF02SVOG20C Xilinx XCF08P xcf04svOg20c XCF16PFS48C XCF04S fit XCF01S-VO20C F50450 marking aab 8 tsop XCF04SVO20C0936
Contextual Info: R DS123 v2.4 July 20, 2004 3 9 Platform Flash In-System Programmable Configuration PROMS Preliminary Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • Low-Power Advanced CMOS FLASH Process • Endurance of 20,000 Program/Erase Cycles

F5045

Abstract: FDZ5045N 30MM2
Contextual Info: FDZ5045N 30V N-Channel Logic Level PowerTrench BGA MOSFET General Description Features Combining Fairchild’s 30V PowerTrench process with state of the art BGA packaging, the FDZ5045N minimizes both PCB space and RDS ON . This BGA MOSFET embodies a breakthrough in packaging

FDZ5045N

Contextual Info: S E M IC O N D U C T O R tm FDZ5045N 30V N-Channel Logic Level PowerTrench BGA MOSFET General Description Features Com bining Fairchild’s 30V PowerTrench process with state of the art BGA packaging, the FDZ5045N m inim izes both PCB space and R DS on . This BGA

F5045P

Abstract: F5045 marking h04 sop marking h04 sop-8 MS5F06881
Contextual Info: 0. Cautions ･ Although Fuji Electric Device Technology is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric Device Technology semiconductor products in your equipment, you are