F5000 Search Results

F5000

Abstract: F5100 F5100R
Contextual Info: VCXO 3.3V SMD / VOLTAGE CONTROLLED CRYSTAL OSCILLATOR F5100 The F5100 is similar to the F5000 VCXO except the supply voltage is 3.3 Volts. This package also gives the frequency control features of a VCXO in a smaller, ceramic surface mount package. Frequency

F4100

Abstract: F4200 F5500 FOX305 KFO90AT RTC72423
Contextual Info: SURFACE MOUNT OSCILLATORS OSCILLATORS TAPE AND REEL SPECIFICATIONS • TAPE SPECIFICATIONS millimeters MODEL FSO-2 KFO90AT F3345/F3355 F3400/F3410 F4100 F4200 F5000/F5100(VCXO) F5500 FOX739/59 RTC72423 FOX305 FOX312 FOX801 A Æ1.5 Æ1.5 Æ1.5 Æ1.5 Æ1.5

Contextual Info: VCXO 3.3V SMD / VOLTAGE CONTROLLED CRYSTAL OSCILLATOR F5100 The F5100 is similar to the F5000 VCXO except the supply voltage is 3.3 Volts. This package also gives the frequency control features of a VCXO in a smaller, ceramic surface mount package. Frequency

FOX305B

Abstract: FOX312BE FOX801 smd marking 95
Contextual Info: Fox Electronics Part Description1 Guide for TCXOs/VCXOs FOXElectronics ####.###### 1 5570 Enterprise Parkway 941-693-0099 2000 FOX ELECTRONICS Fort Myers, Florida 33905 Fox Production SMD Reel Quantities 759/739 Series F5000/F5100 Series FOX801 Series

Contextual Info: VCXO SMD VOLTAGE CONTROLLED CRYSTAL OSCILLATOR F5000 OSCILLATORS The F5000 series gives the frequency control features of a VCXO in a smaller, ceramic surface mount package. Frequency can be pulled up to ±100PPM by varying a control voltage of2.5 V applied to pin 1

smd tr yc

Abstract: F5000
Contextual Info: VCXO SMD VOLTAGE CONTROLLED CRYSTAL OSCILLATOR F5000 OSCILLATORS The F5000 series gives the frequency control features of a VCXO in a smaller, ceramic surface mount package. Frequency can be pulled up to ± 1OOPPM by varying a control voltage of 2.5 V applied to pin 1

Contextual Info: InNET TECHNOLOGIES tecllno^ ^ e jj 3 t F5000S Electrical E L E C T R IC A L S P E C IF IC A T IO N S (REV. X TRANSMIT IMPEDANCE: 100 Ohms CUT OFF FREQUENCY: 5MHz, 10MHz BAND PA SS INSERTION LO SS: (6 -9 M H z ) 4.0dB MAX. (+) - ATTENUATION: 1MHz 27MHz

F5000

Abstract: 100PPM F5000R
Contextual Info: VCXO SMD / VOLTAGE CONTROLLED CRYSTAL OSCILLATOR F5000 The F5000 series gives the frequency control features of a VCXO in a smaller, ceramic surface mount package. Frequency can be pulled a minimum to ±100PPM by varying a control voltage of 2.5 V applied to pin 1 by up to ±2 V.

45.000MHZ

Abstract: F1523BA F5000 F5100
Contextual Info: VOLTAGE CONTROLLED CRYSTAL OSCILLATORS SELECTION GUIDE • SURFACE MOUNT VCXOs VCSAXT PRODUCT VCSAT F5000/F5100 Frequency Range 1.000 ~ 45.000MHz 1.000 ~ 52.000MHz 2.000 ~ 30.000MHz Frequency Stability ±25, 50, 100 PPM ±25, 50, 100 PPM ±50 PPM Key Features

Contextual Info: VCXO SMD / VOLTAGE CONTROLLED CRYSTAL OSCILLATOR F5000 The F5000 series gives the frequency control features of a VCXO in a smaller, ceramic surface mount package. Frequency can be pulled up to ±100PPM by varying a control voltage of 2.5 V applied to pin 1 by up to ±2 V.

Socket S1g1

Abstract: AMD Turion 64 Mobile Technology AM2 amd amd AM2 opteron pin package HTC B834 Socket S1g1 Processor Functional AMD SEMPRON 3000 socket 754 DIAGRAM SEMPRON Socket 754 AM2 31117 CMPXCHG16B
Contextual Info: BIOS and Kernel Developer's Guide for AMD NPT Family 0Fh Processors Publication # 32559 Revision: 3.16 Issue Date: November 2009 2005-2009 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices,

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

Contextual Info: MEMORY CMOS 1 M x 16 BITS HYPER PAGE MODE DYNAMIC RAM M B 8 1 V 1 8 1 6 5 A -6 0 /6 0 L /-7 0 /7 0 L CMOS 1,048,576 x 16 BITS Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V18165A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory

Contextual Info: MEMORY CMOS 1 M x 16 BITS HYPER PAGE MODE DYNAMIC RAM MB8116165B-50/-60 CMOS 1,048,576 x 16 BITS Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8116165B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The MB8116165B features a “hyper page” mode of operation whereby

Contextual Info: PRE LIM IN AR YMarch 1996 Edition 2.2 FUJITSU PRODUCT PROFILE SHEET MB8 1 1 6 1 6 0 A - 6 0 /- 7 0 CMOS 1M X 16BIT FAST PAGE MODE DYNAMIC RAM CMOS 1,048,576 x 16BIT Fast Page Mode Dynamic RAM The Fujitsu MB8116160A is a fully decoded CMOS Dynamic RAM DRAM that contains

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -1 0 1 9 3 -2 E MEMORY CMOS 1 M x 16 BITS HYPER PAGE MODE DYNAMIC RAM M B 8 1 V 1 8 1 6 5 A -6 0 /6 0 L /-7 0 /7 0 L CMOS 1,048,576 x 16 BITS Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V18165A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory

Contextual Info: MEMORY CMOS 1 M x 16 BIT HYPER PAGE MODE DYNAMIC RAM MB81V18165 B-50/-60/-50L/-60 L CMOS 1,048,576 x 16 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V18165B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The MB81V18165B features a “hyper page” mode of operation whereby

Contextual Info: - PRELIMINARYJuly 1996 Edition 1.0 _ _ PRODUCT PROFILE SHEET : MB811171622A-125/-100/-84/-67 F U J IT S U [2K Refresh] CMOS 2 x 512Kx 16 SYNCHRONOUS DRAM CMOS 2 BANKS OF 524,288-WORDS x 16-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB811171622A is a CMOS Synchronous Dynamic Random Access Memory

Contextual Info: -P R E L IM IN A R Y October 1995 Edition 1.1 = FUJITSU PRODUCT PROFILE SHEET MB 8 116165 A- 60/-70 CMOS 1M X 16BIT HYPER PAGE M O D E DYNAMIC RAM CMOS 1,048,576 x 16BIT Hyper Page Mode Dynamic RAM The Fujitsu MB8116165A is a fully decoded CMOS Dynamic RAM DRAM that contains

8118165A

Abstract: 8118165
Contextual Info: MEMORY CMOS 1Mx 16 BIT HYPER PAGE MODE DYNAMIC RAM M B 8118165A-60/-70 CMOS 1,048,576 x 16 BIT Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu M B8118165A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The MB8118165A features a “hyper page” mode of operation whereby

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET A E 5E MEMORY CMOS 2 x 512 K x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-70/-80 CMOS 2-Bank x 524,288-Word x 16 Bit ; Synchronous Dynamic Random Access Memiôiry DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random AccessiMemory SDRAM containing

diode b1c SMD

Abstract: NB b6 smd transistor diode bb4 7g diode F4 3J smd diode S6 6D smd b1c marking ae21 SMD FSR327 transistor smd marking ka p7 rmk bh
Contextual Info: M ISSION S TATEMENT Fox Electronics' mission is to provide a broad line of frequency control products to worldwide electronics markets. Combining the disciplines of engineering, manufacturing, quality assurance, operations, information systems and marketing, Fox strives to provide its customers with superior quality,

F3345R

Abstract: F3415 FRC3 F3171 F1100E F1100ER F1144E F1144ER F1145E F1145ER
Contextual Info: FOX Pb FREE MATRIX The Fox definition of Lead Free is any device or assembly where the content of Pb is <0.1%wt of the device or assembly PHASE 1 PHASE 2 PHASE 3 11/19/2003 Prod Fam F1100E F1100ER F1144E F1144ER F1145E F1145ER F1148E F1523BA F1523BAM F1602T

C000H-DFFFH

Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
Contextual Info: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation