F2 SOT23 Search Results
F2 SOT23 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TBAS16 | Toshiba Electronic Devices & Storage Corporation | Switching Diode, 80 V, 0.215 A, SOT23 | Datasheet | ||
| BAV99 | Toshiba Electronic Devices & Storage Corporation | Switching Diode, 100 V, 0.215 A, SOT23 | Datasheet | ||
| TBAV70 | Toshiba Electronic Devices & Storage Corporation | Switching Diode, 80 V, 0.215 A, SOT23 | Datasheet | ||
| TBAW56 | Toshiba Electronic Devices & Storage Corporation | Switching Diode, 80 V, 0.215 A, SOT23 | Datasheet | ||
| BAV70 | Toshiba Electronic Devices & Storage Corporation | Switching Diode, 100 V, 0.215 A, SOT23 | Datasheet |
F2 SOT23 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
F5 MARK
Abstract: marking f3 sot-23 KST1009F1 KST1009F2 KST1009F3 KST1009F4 KST1009F5 marking code F3
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kst1009f1/f2/f3/f4/f5ot-23f5 markmarking f3 sot-23+6 | |
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Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation |
OCR Scan |
kst1009f1/f2/f3/f4/f5ot-23kst1009f1kst1009f2+3 | |
BFS19Contextual Info: BFS19 SMALL SIGNAL NPN TRANSISTOR • ■ ■ Type Marking BFS19 F2 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS RF APPLICATION UP TO 100 MHz 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS |
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bfs19ot-23 | |
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Contextual Info: SAMSUNG ELECTRONICS INC bOE » • 7^4142 TRANSISTORS 0Q11524 *i27 « S r i G K FUNCTION GUIDE SOT-23 Type Transistors Continued Condition D evio and Polarity (Marking) NPN VcEO (V) PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) |
OCR Scan |
0q11524ot-23kst1009f2kst1009f3+6 | |
KSC3488
Abstract: KSC853 KSA953 KSC815
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OCR Scan |
ot-23kst1009f2kst1009f3kst1009f4+10 | |
KSC815Contextual Info: TRANSISTORS FUNCTION GUIDE SOT-23 Transistors Continued Device and Polarit(Marking) Condition NPN PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) BCW 29(Ct) BCW31(D1) 1.1.2 (V) 25 25 25 25 25 20 20 V ce lc (A) (V) 3 3 3 3 1 (mA) MIN |
OCR Scan |
ot-23kst1009f2kst1009f3kst1009f4+7 | |
AX620
Abstract: gee transistor RAo sot-23 SC06960
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OCR Scan |
bfs19ot-23sc06960dd7a05d+3 | |
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Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 25 5 50 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage |
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kst1009f1/f2/f3/f4/f5ot-23kst1009f1kst1009f2+3 | |
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Contextual Info: RFM Preliminary MICRO-DEVICES R F2 3 14 | GENERAL PURPOSE LOW NOISE AM PLIFIER T y p ic a l A p p lic a tio n s • Broadband Gain Blocks • Driver Stage for Power Amplifiers • Final PA for Low-Power Applications • Oscillator Loop Amplifiers • IF or RF Buffer Amplifiers |
OCR Scan |
rf2314 | |
MMBT3960
Abstract: MMBT3960A MMBT4260 MMBT6543 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1 MMBC1321Q2
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OCR Scan |
ot-23mmbt3960ammbt3960mmbt6543+12 | |
74AHC14
Abstract: U22-C BKLVMAIN
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Original |
minismdc1100603b100u/16v0805c+6 | |
RF2364
Abstract: RF2365 f236 sot23-5 rf amplifier p12
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rf2365rf2364f236sot23-5 rf amplifier p12 | |
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Contextual Info: 62 7 BFU520A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU520A is part of the BFU5 family of transistors, suitable for small signal to medium |
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bfu520aaec-q101 | |
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Contextual Info: 62 7 BFU530A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU530A is part of the BFU5 family of transistors, suitable for small signal to medium |
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bfu530aaec-q101 | |
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MAX4249
Abstract: MAX4250 MAX4251 MAX4252 MAX4253 MAX4254 MAX4255 MAX4256 MAX4257 mosfet pmos
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max424922mhzmax4255max4257+8 | |
L282 ST
Abstract: L281 L282 TL431 TS3431 SOT-23-3Lpackage sot23 L282 ST TL431 SOT-23 MARKING AKV
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ts3431100maot23-3ltl431+8 | |
D103
Abstract: D104 D107 D108 F100 MAX4162 MAX4163 MAX4164
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Original |
max4162250khzot23-5max4163+7 | |
D103
Abstract: D104 D107 F100 MAX4130 MAX4132 MAX4134 3e10
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Original |
max413010mhz900uaot23-5+8 | |
MAX4332
Abstract: D103 D104 D107 D108 F100 MAX4330 MAX4334
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Original |
max4330245uaot23-5max4332+7 | |
65e8
Abstract: MAX4165 3VI2 D103 D104 D107 D108 F100 MAX4167 MAX4169
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Original |
max4165ot23-5max416714-pin+8 | |
50 Amp 100 volt mosfet
Abstract: D107 MAX4242 D103 D104 F100 MAX4240 MAX4244
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max4240ot23-5max424214-pin+7 | |
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Contextual Info: AH373 Internal Pull-up Hall Effect Latch Features General Description - 2.2V to 20V DC operation voltage - Built-in pull-up resistor - 25mA output sink current - Operating temperature: −40°C ~ +125°C - Package: SIP3, SOT23 AH373 is a single-digital-output Hall-effect sensor |
Original |
ah373 | |
SOT23 hall
Abstract: REGULATOR AVR R 129 Rev A AH337
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ah337sot23 hallregulator avr r 129 rev a | |
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Contextual Info: AH375 Single Phase Hall Effect Latch Features General Description - 2.2V to 20V DC operation voltage - Temperature compensation - Wide operating voltage range - Open drain pre-driver - 25mA maximum sinking output current - Package: SIP3, SOT23 AH375 is an integrated Hall effect latched sensor |
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ah375 | |