F104 Search Results

Contextual Info: SIEM ENS BF 554 NPN Silicon RF Transistor • For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits Type Marking Ordering Code tape and reel BF 554 CC Q62702-F1042 Pin Co nfigural ion 1 2 3 B E Package1) C SOT-23

Contextual Info: WT-F104SP Side view Chip LED Product Specifications Specification Iv Material Quantity Z41:1610-1700 mcd Z42:1700-1800 mcd Z51:1800-1900 mcd Z52:1900-2010 mcd Z61:2010-2125 mcd @20mA/ Ta= 25 ;Tolerance: + 10% O Chromaticity As page 3~6 Coordinate @20mA/ Ta= 25 C;Tolerance: + 0.1%

LADR2

Abstract: f104z LADR0 LADR4 F472Z r103j UPD71055 R471J LAD-R2 R123J
Contextual Info: 8 7 M3.3V D10uF 6 5 4 3 2 1 L3.3V F104Z D10uF M5.0V F104Z L5.0V D D D10uF F104Z D10uF F104Z L3.3V -12V R103J R103J R103J R103J R103J R103J R103J R103J R103J R103J +12V D10uF F104Z D10uF 1N4148 LT1117 2 IN 3 TAB OUT TAB A D J 1 F104Z 5.0V R103J R103J R103J

7AC8

Contextual Info: F10474 1024 x 4-Bit Static Random Access Memory FA IR C H ILD A S chlum berger C om pany F100K ECL Product Description The F10474 is a 4096-bit read/w rite Random Access M em ory RAM , organized 1024 w ords by fo u r bits per w ord. It is designed for high-speed scratchpad, control

MB9BF104NA

Abstract: MB9BF105RA MB9BF104N MB9BF106N
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS706-00020-1v0-E 32-bit ARMTM CortexTM-M3 based Microcontroller MB9B100A Series MB9BF102NA/RA, F104NA/RA, F105NA/RA, F106NA/RA DESCRIPTION This series are a highly integrated 32-bit microcontroller that target for high-performance and cost-sensitive

F1040

Contextual Info: polyfet rf devices F1040 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F10415

Contextual Info: F10415 1024 X 1-Bit Static Random Access Memory F A IR C H IL D A Schlumberger Company F100K ECL Product Description The F10415 is a 1024-bit read/write Random Access Memory RAM , organized as 1024 words by one bit per word and designed lo r high-speed scratchpad, control

Contextual Info: F10474 1024 x 4-Bit Static Random Access Memory FAIRCHILD A Schlumberger Company ]fi 04-14 M em ory and High Speed L o g ic Description T he F10474 is a 4096-bit read/w rite Random Access M em ory R AM , organized 1024 w ords by fo u r bits per w ord. It is designed for high-speed scratchpad, control

Contextual Info: ECL ISOPLANAR MEMORY F10405 128x l-B IT FULLY DECODED RANDOM ACCESS MEMORY FAIRCHILD VOLTAGE C O M P E N S A T E D ECL G E N E R A L D ESC R IPTIO N - The F10405 is a 128-bit Read/W rite Random Access Mem­ ory, organized 128 w ords by one bit. It has ty p ic a l access tim e o f 12 ns and is designed

a983

Contextual Info: i F10474 1024 x 4-Bit Static Random Access Memory g A IR C H IL D A Schlumberger Company F100K ECL Product Description The F10474 is a 4096-bit read/write Random Access Memory RAM , organized 1024 words by four bits per word. It is designed for high-speed scratchpad, control

transistor 554

Abstract: Transistor BF 312 554 -1 transistor Q62702-F551 transistor U 554 BF 312
Contextual Info: NPN Silicon RF Transìstor BF 554 General RF small-signal applications up to 300 MHz, amplifier, mixer and oscillator in circuits Type Marking Ordering code or versions In bulk Ordering code for versions on 8 mm-tape Package BF 554 CC Q62702-F551 Q62702-F1042

TR-F104

Abstract: M1273 98-TR-F104
Contextual Info: Tape & Reel Packaging TR-F104 Tape Width, mm 8 Device Cavity Pitch, mm 4 Reel Size, inches 7 Devices per Reel, see note 1 2000 Note 1: PMA series also available in quantities of 10, 50, 100, 200, 500 and 1000 pcs. per reel. Mini-Circuits carrier tape materials provide protection from ESD Electro-Static Discharge during handling

Contextual Info: Extract from the online catalog REL-SW120/F104 Order No.: 2960371 The illustration shows the version REL-SG 24/F 104 KAMMRELAIS , contact F 104, size 2, heavy-duty contact, 2 PDTs,

Contextual Info: polyfet rf devices F1040 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: F1046BS Linear ICs Active Filter for Telecommunications status Military/High-RelN Nom. Supp V 5.0 Minimum Operating Temp (øC)0 Maximum Operating Temp (øC)70 Package StyleNone Mounting StyleT Pinout Equivalence CodeN/A # PinsN/A Ckt. (Pinout) Number DescriptionTV-IF Saw Filter; 38.0MHz carrier; adjustment free

MB95F108Am

Abstract: 108AMW MB95100AM
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS07-12614-3E 8-bit Proprietary Microcontrollers CMOS F2MC-8FX MB95100AM Series / /

F10480

Contextual Info: F10480 16,384 x 1-Bit Static Random Access Memory FAIRCHILD A S chlum berger C om pany M em ory and H igh Speed Logic Connection Diagram 20-Pin DIP T o p View Description The F10480 is a 16,384-bit read/w rite Random Access M em ory (RAM ), organized 16,384 w ords by one b i t per

Contextual Info: A S c h lu m b e rg e r C o m p a n y F10414 256 x 1-Bit Static Random Access M em ory B ipolar Division F10K ECL Product Description The F10414 is a 256-bit read/w rite Random Access M em ory RAM , organized 256 w ords by one bit. It is designed for high-speed scratchpad, control and buffer

Microcontrollers

Abstract: MB95100AM MB95F104AJSPMC
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS07-12614-5E 8-bit Proprietary Microcontrollers CMOS F2MC-8FX MB95100AM Series / /

MB9AF105N

Abstract: MB9AF104NA MB9AF104R k3759 h9618 MB9AF102 C8 SOT5 PINS MB9A100A MB9AF104
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS706-00022-1v0-E 32-bit ARMTM CortexTM-M3 based Microcontroller MB9A100A Series MB9AF102NA/RA, F104NA/RA, F105NA/RA DESCRIPTION The MB9A100A Series are a highly integrated 32-bit microcontroller that target for high-performance and

Contextual Info: ECL ISOPLANAR MEMORY F10410 256x1-BIT FULLY DECODED RANDOM ACCESS MEMORY FAIRCHILD VOLTAGE COMPENSATED ECL G E N E R A L D E S C R IP T IO N — The F 1 0 4 1 0 is a 2 5 6 -b it R e a d /W rite Random Access M em ory, organized 25 6 w ord s by one bit. It has typical access tim e o f 18 ns and is

EC-N023

Contextual Info: NOTES: UNLESS OTHERWISE SPECIFIED, TOLERANCES ARE 0.015” [.3 8 ' mm -0.010” [.254m m ~ .040 1,02m m F .030 [ 0 .7 6 m m _ .1 60 [ 4 .0 6 m m _ 0.09m m 0.06m m B EN#06-F1041 A ECN#02314 DESCRIPTION DRAWN C .230 [5.84m m .150 MIN [3.81 m m REV. REV. .350

Contextual Info: ECL ISOPLANAR MEMORY F10405 128xl-BIT FULLY DECODED RANDOM ACCESS MEMORY FAIRCHILD VOLTAGE COMPENSATED ECL G E N E R A L D E S C R IP T IO N - The F 1 0 4 0 5 is a 1 28 -b it R ead/W rite Random Access M em ­ o ry , organized 1 2 8 w ords b y one bit. !t has typical access tim e o f 12 nsand is designed

Contextual Info: F10470 Fig. 4 Write Mode Timing Note Tinning Diagram represents one solution which results in an optimum cycle time. Timing may be changed to fit various applications as long as the worst case limits are not violated. 4-40