F100M Search Results

fuse F100mA

Abstract: X10229 trigger module Thyristor triggering module phase control trigger BS7671 X10213 X10255 soft start phase control triggering with microprocessor
Contextual Info: SPECIFICATIONS MICROPROCESSOR BASED 10V TO 440V DUAL MODE TRIGGER MODULE Min line voltage 5V ac Trigger output rating 1A Max line voltage 440V ac Power consumption 1.2 watts Operating frequency 50 to 60 Hz +/- 5% Mono-link fuse F100mA HRC Max electrical isolation

MPSA63

Abstract: MPSA63 equivalent 100C100B mps-a63 C10AA MPSA62 mpsa64
Contextual Info: TOSHIBA TRANSISTOR MPSA62, 63, 64 SILICON PNP EPITAXIAL TYPE PCT PROCESS DESIGNED FOR PRE-AMPLIFIER INPUT APPLICATIONS REQUIRING HIGH INPUT IMPEDANCE. FEATURES : • High DC Current Gain I I C-10«A : hFE- 5000(Min.) MPSA63 10000(Min.) MPSA64 20000(Min.) MPSA62

YTS2222A

Abstract: transistor marking 1p Z
Contextual Info: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage

YTS4401

Abstract: MARKING e1v
Contextual Info: SILICON NPN EPITAXIAL TYPE YTS4401 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES : • Low Leakage Current : Ic]jv=100nA Max. , Iggy=-100nA (Max.) @ VCE=35V, V b e =-0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage

Contextual Info: HI5760 Semiconductor Data Sheet PRELIMINARY February 1999 10-Bit, 125/60 MSPS, High Speed D/A Converter • Throughput Rate . . . . . . . . . . . . . . . . . . . . . . . 125 MSPS Ordering Information TEMP. RANGE oC PACKAGE • Low Power . . . . . . . . . . . . . . . 165mW at 5V, 27mW at 3V

Contextual Info: M i- 2N2222A GENERAL PURPOSE NPN TRANSISTOR 61096 OPTOELECTRONIC PRODUCTS DIVISION Features • • • • 0 210 5 33 , 0 170(4 32) [' TO -18 style package Rugged package - able to withstand high acceleration load Hermetically sealed MIL-S-19500 screening available

A4H1

Abstract: HD6417750RBG240 264-PIN BSC COMPUTER SCIENCE digital logic design Notes Transistor mcr 22-8 413 REJ10B0210-0400 A5H1 zo 607 HD6417750RBP240V Tag 225 600 replacement
Contextual Info: REJ09B0366-0700 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. SH7750, SH7750S, SH7750R Group 32

2SK19

Abstract: transistor 2sk19 2SK19BL 2SK19-BL transistor 2sk 70 transistor 2sk 220O OAT 3Z transistor kt 301
Contextual Info: 19 2SK o vv * O V H P fci*« « o PM T u n e r ^ IL I C O N N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR +m » - a n d VHP A m p l i f i e r U n it A p p lic a tio n s . * 5 .8 MAX. W iJiU i9 ^ *S ^ > „ i S 3 ^ A t J - f >" ^ : i Ops = ! W * - * s 20dB (T y p . (f= 1 0 0 M H z )

2SJ83

Abstract: 2SK238 2SJ82 2SK241 2SK240 2SK203 2SK220 2S119 2SK197 2SK198
Contextual Info: - 38 - * . 1 fr K ft f M € tí: € 2SK197 B ÍL B ÍL 2SK198 tñ“ F 2 SK196 H 2SK199 2SK201 NEC 2SK203 NEC 2SK208 m m m £ 4 -k % Vg s * X V* m (V) * (V) 800m 2m 120 0.2 -2 10 10m G 150m -lOn -0.5 2m 14m 10 -0.3 -4 10 LF A J N D -30 GDO 10m G 150m

2SK520

Abstract: 2SK523 2SK508 2SK537 2sk515 2SK511 2SK514 2SK518 2SK519 2sk43
Contextual Info: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . (V) «• m të P d /P c h * * (A) * * (W) Ig s s (max) (A) Vg s (V) ^ W (Ta=25°C) te (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) Id (A) Q (min) (S) 1 I >>60 B -— ' ü Vd s (V) Id

DSA-001

Abstract: hitachi HD6417750BP200 822 1334 Hitachi DSA002753
Contextual Info: SuperH SH 32-Bit RISC MCU/MPU Series SH7750 High-Performance RISC Engine Hardware Manual ADE-602-124B Rev. 3.0 09/20/99 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in

Contextual Info: PJ2N3904 NPN Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR • • Collector-Emitter Voltage: VCe o = 40V Collector Dissipation: Pc max = 625 mW TO-92 SOT-23 B ABSOLUTE M AXIM U M RATINGS (Ta = 25 C) Symbol Rating Unit Collector-Base Voltage VCBO

2SC2633

Abstract: 2SC2590 2SA1110 2SA1125 2SA1254 2SC2206 2SA111 2SA11 CC1216
Contextual Info: PANASONIC INDL/ELEK-CSEPII} h =5yV7S> ' 7SC T 3 D | bT3SflS4 3 I - 7 □□ÔûfiGfi 2 S A in o 2SA1110 y U 3 > P N P x fcf£ ¿ r i s T \s~f\s 2SC2590 fc a y y i j > • If • ■ i~ f î2 /S i P N P Epitaxial Planar Power Amplifier >) /'Complementary Pair with

HD6417750SF167V

Abstract: BSC COMPUTER SCIENCE visual basic Notes HXXXXX hudi D63D48 SZ100 DBL 1035 Nippon capacitors SCHEMATIC ATI graphics card HD6417750BP200M
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FGX591 ISSUE 3 - NOVEMBER 1995_ O_ PARTMARKING DETAILCOMPLEMENTARY TYPE- P1 FCX491 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Collector-Base Voltage VALUE UNIT V CBO

Contextual Info: SM-8 COMPLEMENTARY M EDIUM POWER HIGH GAIN TRANSISTORS ZDT6718 ISSUE 1 - NOVEMBER 1995 - ci c r _U Bi Ct C L =□ Ei NPN C» 1 1 ZD b2 c2 l 1 ZO e2 pnp PARTMARKING DETAIL- T6718 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L NPN

ZTX1051A

Abstract: transistor 3342
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1051A ISSUE 2 -JANUARY 95. " ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BOL ZTX1051A UNIT Collector-Base Voltage VCBO 150 V Collector-Em itter Voltage VCEO 40 V Em itter-Base Voltage VEBO

transistor C 245 b

Abstract: ZTX1053A
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1053A ISSU E 2 - JANUARY 1995_ — — — — — — — - ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L Collector-Base Voltage ZT X 1 05 3A U N IT v CBO 150 V Coliector-Emitter Voltage

F220M

Contextual Info: Series 1008HF Unshielded Surface Mount Inductors SERIES 1008HF NON-MAGNETIC CORE 4.7 8.2 10.0 12.0 15.0 18.0 22.0 27.0 33.0 39.0 47.0 56.0 68.0 82.0 100 ±20% ±20% ±20% ±20% ±20% ±20% ±20% ±20% ±20% ±20% ±20% ±10% ±10% ±10% ±10% 40 40 30 30 30

Contextual Info: Coils and Inductors Lead Wireless Power Inductors P•F Series / H•PI Series SMD type current inductors are suitable for power supply smoothing chokes, DC/DC voltage converter choke coils, and noise protection measures. P•F and H•PI Series inductors have been developed mainly for

thyristor firing circuit

Abstract: Betatherm 10K3A1 10K3A1 fast acting circuit breakers mcb gate firing thyristor firing circuits BS7671 X10213 X10229 X10255
Contextual Info: 3 PHASE BURST FIRING 0-40°°C / 0-150°°C TEMPERATURE CONTROLLER BMT-3A X10298 INTRODUCTION This microprocessor based dual range temperature control module incorporates the unique MONO-LINK - Gate to Gate firing feature which uses single path hard firing for each phase

Contextual Info: 45E D • ^ 0 ^ 7 2 5 0 DDlVflbl 2 TOSHIBA TRANSISTOR T0S4 - MPS2907A SILICON PNP EPITAXIAL TYPE PCT PROCESS TO SHIBA (DISCRETE/OPTO) FOR HIGH SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUTRY. FEATURES : . High DC Current Gain Specified : -0.1- 500mA

transistor marking MK

Abstract: YTS2222
Contextual Info: TOSHIBA TRANSISTOR YTS2907 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR HIGH-SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUITRY FEATURES: . High DC Current Gain Specified : -0.1~ -500mA . High Transition Frequency : @ Ic— 50mA, fx*200MHz(Min.)

1k eprom

Abstract: Hitachi DSA002732
Contextual Info: Hitachi SuperH RISC engine SH7750 Series SH7750, SH7750S Hardware Manual ADE-602-124C Rev. 4.0 4/21/00 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in