F1 TRANSISTOR MARK Search Results

FOD250L

Abstract: FOD050L FOD050LR1 FOD050LR2 FOD053L FOD250LS FOD250LSD FOD250LT VDE0884
Contextual Info: LVTTL/LVCMOS 3.3V HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL: FOD050L DUAL-CHANNEL: FOD053L FOD250L PACKAGE SCHEMATIC 8 VCC N/C 1 8 V 1 7 VB + 2 8 VCC + 1 F1 _ 2 7 V01 3 6 V02 VF _ 6 VO 3 _ V 8 N/C 4 8 1 5 GND F2 5 GND + 4 1 FOD050L, FOD250L FOD053L

Contextual Info: LVTTL/LVCMOS 3.3V HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL: FOD050L DUAL-CHANNEL: FOD053L FOD250L PACKAGE SCHEMATIC 8 VCC N/C 1 8 V 1 7 VB + 2 8 VCC + 1 F1 _ 2 7 V01 3 6 V02 VF _ 6 VO 3 _ V 8 N/C 4 8 1 5 GND F2 5 GND + 4 1 FOD050L, FOD250L FOD053L

FOD250L

Contextual Info: LVTTL/LVCMOS 3.3V HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL: FOD050L DUAL-CHANNEL: FOD053L FOD250L PACKAGE SCHEMATIC 8 VCC N/C 1 8 V 1 7 VB + 2 8 VCC + 1 F1 _ 2 7 V01 3 6 V02 VF _ 6 VO 3 _ V 8 N/C 4 8 1 5 GND F2 5 GND + 4 1 FOD050L, FOD250L FOD053L

6N136

Abstract: a 2530 6N135 HCPL-2530 HCPL-2503 HCPL-2531 HCPL-4502 hcpl 2531 HCPL4502 HCPL2531
Contextual Info: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL: 6N135 DUAL-CHANNEL: HCPL-2530 6N136 HCPL-2531 PACKAGE HCPL-2503 HCPL-4502 SCHEMATIC N/C 1 8 VCC + 1 V 8 + 2 1 7 VB 8 VCC F1 _ 2 7 V01 3 6 V02 VF _ 3 6 VO _ VF2 N/C 4 8 5 GND + 4 5 GND 8 1 1 6N135, 6N136, HCPL-2503, HCPL-4502

MT6320

Contextual Info: PHOTO TRANSISTOR COUPLER MARKTECH INTERNATIONAL 1ÖE D • ST'l'ibSS G Q G Q M ? 6! 2 MT6350, MT6360 APPLICATIONS • OFFICE MACHINERY • COPIERS • SOLID STATE RELAY • SWITCHING POWER SUPPLY • PROGRAMABLE CONTROLLERS The MARKTECH MT6350 and MT6360 consist

MT3S113TU

Contextual Info: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 1.1. 2.2. 3.3. R7 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:|S21e|2=12.5dB Typ. (@ f=1GHz)

Contextual Info: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 2 3 1.1. 2.2. 3.3. R7 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:|S21e| = 12.5dB typ. (@ f=1GHz)

MT3S113

Abstract: transistor 2F to-236 4360A
Contextual Info: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking

IMX6

Abstract: MARKING Pa 6pin TRANSISTOR 6pin ic marking code P2 2SC2413K T108 A10Z
Contextual Info: IMX6 Transistor, dual, NPN Features Dimensions Units : mm • available in SMT6 (IMD, SC-74) package • package marking: X6 • package contains two independent NPN transistors (2SC2413K) • same size as UMT3 (UMT, SC-70) so same placement machine can be

CBVK741B019

Abstract: F63TNR MMBTA43 MPSA42 MPSA43 PN2222N DATE CODE FAIRCHILD
Contextual Info: MPSA43 MMBTA43 C E C B TO-92 B SOT-23 E Mark: 1E NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. See MPSA42 for characteristics. Absolute Maximum Ratings*

transistor marking MCs

Abstract: SOT 23 CODE MCS NPN marking MCs marking MCs sot-323 Q62702-F1645 bfs 11
Contextual Info: BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Type Marking Ordering Code Pin Configuration BFS 17W MCs 1=B Q62702-F1645 2=E Package 3=C SOT-323 Maximum Ratings of any single Transistor Parameter

6c2 transistor

Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
Contextual Info: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor

SOT 23 CODE MCS

Abstract: transistor marking MCs Q62702-F940 bfs 11 SOT 23 marking MCS
Contextual Info: BFS 17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. Type Marking Ordering Code Pin Configuration BFS 17P MCs 1=B Q62702-F940 2=E Package 3=C SOT-23 Maximum Ratings of any single Transistor

rf transistor mark code H1

Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
Contextual Info: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

MARKING W3 SOT23 TRANSISTOR

Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

BC635

Abstract: BC636 BC636-AP
Contextual Info: BC636 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment BC636 BC636 TO-92 / Bulk BC636-AP BC636 TO-92 • ■ ■ / Ammopack SILICON EPITAXIAL PLANAR PNP TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY

MPSA65

Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Contextual Info: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

Contextual Info: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency

diode GP 829

Abstract: MDA215 MDA209 Diode GP 622 BY239 stub BD241C BLV2046 MDA208 philips ferrite 4b1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV2046 UHF power transistor Product specification 1997 Aug 22 Philips Semiconductors Product specification UHF power transistor BLV2046 FEATURES PINNING - SOT460A • Emitter ballasting resistors for optimum temperature

CBVK741B019

Abstract: F63TNR MMBTH20 MPSH20 PN2222N Q100 transistor mark code t1 Ohmite RF Z-235 MPS-H20
Contextual Info: MPSH20 / MMBTH20 MPSH20 MMBTH20 C E C B TO-92 E B SOT-23 Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*

Contextual Info: TRANSISTOR COUPLER MARKTECH IN TER NATI ON AL lfiE D • 57mS5 0000474 3 M T5800, M T5810 'T - m - s i GaAlAs INFRARED LED+ PHOTO TRANSISTOR The MT5800 and MT5810 consist of a photo transistor optically coupled to an aluminum gallium arsenide infrared emitting diode in a five lead VDE package. MTPC5800 is

QS 100 NPN Transistor

Abstract: NPN transistor mhz s-parameter transistor w 431 IC 431 2SC4536 IC 7482 534-1 MAG RF Transistor s-parameter 638 transistor transistor rf
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4536 DESCRIPTION •Low Noise NF = 1.5 dB TYP. @VCE = 10 V, IC = 10 mA, f = 1 GHz ·Low Distortion IM2 = 57.5 dB TYP. @VCE = 10 V, IC = 50 mA IM3 = 82 dB TYP. @VCE = 10 V, IC = 50 mA

Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

MPSH10 s parameters

Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency