F011 TRANSISTOR Search Results

F011 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

F011 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
bcy59 equivalent Abstract: BU108 BUY69 BC326 F011 transistor BSCECC F011 bcy78 equivalent bcy79 equivalent ica 350 Contextual Info: BS9000 NPN Power Transistors TO-3 Package B S Type Num ber VCBO Com m ercial Equivalent Case Outlines A bsolu te M axim um Ratings IC A VEBO PTOT 8 50 5 5 10 6 7 50 70 B S 93 63 B S 93 65 B S 93 63 F014 F191 F016 B D 2 53 , A, B C BU105 BU108 3 5 0 to 900	OCR Scan	BS9000 BS9363 BS9365 BD253 BU105 BU108 BS936S bcy59 equivalent BUY69 BC326 F011 transistor BSCECC F011 bcy78 equivalent bcy79 equivalent ica 350	PDF
2N3053 equivalent Abstract: f012 transistor t05 BC107 pnp equivalent 2n4036 equivalent BS9365 F112 BS9365F112 BC177 equivalent bc108 equivalent BS93G5 Contextual Info: BS9000 Small Signal Transistors Absolute Maximum Rating 8 S Type Number 6 S 9360 F001 BS9360 F001 BS9360 F001 BS9360 F002 BS9360 F002 BS9360 F002 B S9360 F003 B S9360 F003 B S9360 F003 BS9360 F004 BS9360 F004 BS9360 F004 BS9360 F005 BS9360 F005 BS9360 F005	OCR Scan	BS9000 BS9360 BFT32 BFT33 BFT34 B59360 2N3053 equivalent f012 transistor t05 BC107 pnp equivalent 2n4036 equivalent BS9365 F112 BS9365F112 BC177 equivalent bc108 equivalent BS93G5	PDF
BU105 Abstract: BUY69 BU108 BU137 F014 transistor 5010 S010 BS-9000 BU137A Contextual Info: Discrete Semiconductors T e x a s In s t r u m e n t s BS9000 High Speed Rectifiers D C Tw no Number BS9331 BS9331 BS9331 BS9331 BS9331 F027 F027 F027 F027 F027 Commercia! Equivalent Case 1N3879/R 1N3880/R 1N3881/R 1 N3882/R 1N3883/R S010 S010 S010 S010 S010	OCR Scan	BS9000 BS9331 1N3879/R 1N3880/R 1N3881/R 1N3882/R BU105 BUY69 BU108 BU137 F014 transistor 5010 S010 BS-9000 BU137A	PDF
SI4532DY Abstract: F852 transistor CBVK741B019 F011 F63TNR F852 FDS9953A L86Z Contextual Info: Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This	Original	Si4532DY -30Voduct F852 transistor CBVK741B019 F011 F63TNR F852 FDS9953A L86Z	PDF
CBVK741B019 Abstract: F011 F63TNR F852 FDS9412 FDS9953A L86Z Contextual Info: FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain	Original	FDS9412 CBVK741B019 F011 F63TNR F852 FDS9412 FDS9953A L86Z	PDF
gs 9412 Abstract: F011 F63TNR F852 FDS9412 L86Z SOIC-16 D1294 Contextual Info: November 1997 FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	FDS9412 gs 9412 F011 F63TNR F852 FDS9412 L86Z SOIC-16 D1294	PDF
CBVK741B019 Abstract: F011 F63TNR F852 FDS9953A L86Z NDS9933A 28A-600 F011 transistor Contextual Info: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior	Original	NDS9933A CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS9933A 28A-600 F011 transistor	PDF
Contextual Info: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very	Original	Si4532DY	PDF
MOSFET 830 63 ng Abstract: nds9410a diode marking code RJ Contextual Info: NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain	Original	NDS9410A MOSFET 830 63 ng nds9410a diode marking code RJ	PDF
Contextual Info: Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very	Original	Si4532DY	PDF
9936A Abstract: F852 FDS9936A L86Z SOIC-16 F011 F63TNR Contextual Info: May 1998 FDS9936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	FDS9936A OT-23 9936A F852 FDS9936A L86Z SOIC-16 F011 F63TNR	PDF
Contextual Info: FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain	Original	FDS9412	PDF
CBVK741B019 Abstract: F011 F63TNR F852 FDS9953A L86Z NDS9410S Contextual Info: February 1997 NDS9410S Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is	Original	NDS9410S CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS9410S	PDF
Contextual Info: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior	Original	NDS9933A	PDF

CBVK741B019 Abstract: F011 F63TNR F852 L86Z NDS9405 Contextual Info: February 1996 NDS9405 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is	Original	NDS9405 CBVK741B019 F011 F63TNR F852 L86Z NDS9405	PDF
Contextual Info: Si6953DQ Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate	Original	Si6953DQ	PDF
BUY69 Abstract: bu137 transistor t03 BU108 BC326 BU500 bu137a F011 transistor bcy79 equivalent 2s026 Contextual Info: Metal Can Power H igh V o lta g e 200-1500 V o lts Vce Case Outlines «- 4 •* + r] •U i -0 - 2 3 - “ 6-6-4- — 38 05 min - D im ensions in mm TO-5 9 1 Constn. V C B O V Outline IC Pk A IC d.c. A PTO T 200 6 250 300 400 6 4 4 4 4 50 50 50 50 10 100	OCR Scan	0-400I BD253 BD253A BD253B BFX84 BFX85 BFX86 BCY78 BCY79 BCY58 BUY69 bu137 transistor t03 BU108 BC326 BU500 bu137a F011 transistor bcy79 equivalent 2s026	PDF
2N3053 equivalent Abstract: bf258 equivalent 2N2219 2N2905 BC107 equivalent transistors bc109 equivalent BF178 BC107 pnp equivalent BC177 equivalent bc303 f-002 Contextual Info: Metal Can Complementary Pairs Maximum ratin ps BV Case \| Device Type Polarity Core Drivers BV BV CBO CEO EBO ICM V V V mA hFE1 Ic mA min. max. Ic mA HFE2 fT min. min. max. MHz VCE sat IC mA V 2N3724A NPN 2N3725A NPN T039 T039 50 80 30 50 6 6 1200 1200 100	OCR Scan	2N3724A 2N3725A 2N3244 BF257 BS9365 2N4036 2N4037 BS3365 2N3053 equivalent bf258 equivalent 2N2219 2N2905 BC107 equivalent transistors bc109 equivalent BF178 BC107 pnp equivalent BC177 equivalent bc303 f-002	PDF
F011 Abstract: F63TNR F852 L86Z NDS9435A Contextual Info: May 1996 NDS9435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	NDS9435A F011 F63TNR F852 L86Z NDS9435A	PDF
CBVK741B019 Abstract: F011 F63TNR F852 FDS8958A L86Z Contextual Info: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize	Original	FDS8958A CBVK741B019 F011 F63TNR F852 FDS8958A L86Z	PDF
2N290 Abstract: bc143 2N3570 2N3571 2N3572 2N4252 2N4253 2N918 BFT79 T018 Contextual Info: Metal Can Device Type 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0-48 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T 072 T 072 T 072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200	OCR Scan	4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 High59 BS9365 2N290 bc143 BFT79 T018	PDF
BC107 equivalent transistors Abstract: EQUIVALENT TRANSISTOR bc108 bc109 equivalent transistor t05 bc108 equivalent BC107 equivalent equivalent transistor bc107 2N2484 equivalent transistors equivalent of transistor bc108 BC177 equivalent Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Amplifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra	OCR Scan	BCW35GP. BS9365 2N4036 2N4037 BS3365 2N4030 BC107 equivalent transistors EQUIVALENT TRANSISTOR bc108 bc109 equivalent transistor t05 bc108 equivalent BC107 equivalent equivalent transistor bc107 2N2484 equivalent transistors equivalent of transistor bc108 BC177 equivalent	PDF
2N4260 Abstract: F012 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50 Contextual Info: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type ¡5 o £L BV BV BV Case hFEI CBO CEO EBO ICM mA V V V hFE2 1C Ic mA min. max. mA BFT39 BFT40 BFT41 NPN NPN NPN T039 T039 T039 90 70 60 80 60 50 5 5 5 1000 1000 1000 100 50 100 75	OCR Scan	BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 2N4260 F012	PDF
Contextual Info: June 1998 FDS8958A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very	Original	FDS8958A	PDF

F011 TRANSISTOR Search Results

F011 TRANSISTOR Result Highlights (5)

F011 TRANSISTOR Datasheets Context Search

bcy59 equivalent

2N3053 equivalent

BU105

SI4532DY

CBVK741B019

gs 9412

CBVK741B019

MOSFET 830 63 ng

9936A

CBVK741B019

CBVK741B019

BUY69

2N3053 equivalent

F011

CBVK741B019

2N290

BC107 equivalent transistors

2N4260