F 20MT Search Results

Contextual Info: DASH NO M CODE REVISIONS o CM \ 9 Z 6 0 C. PAS i 3 APR S I V t NOTES! 1.m a t e r ia l s ; B NC 20MTACTP- BEKYLUüK q o f f z k ,QQ-c-sao. LOCK WASHER-PHOSFHOÍ? BRONZE,QQ-S'750 N 5U LA70R -T£FLO N 1L -p -4 C > 3 , ALLO TH ER METAL PA R T S ' BRASS, Q Q -B -Í2 6 -

PNP transistor A705

Abstract: 2N1620 2sc768 2N1619 UD3008 BD264 BD265A MHT6414 SOT1156 MHT6311
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

TRM401

Abstract: BC140C ST6512 181T2 mt102 MD14 7G13 ST7200 81T2 A298
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

BD107

Abstract: BD106 m06g MT20a D7G2 SDT9903 2N2306 MT27 BLY86 m06b
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

sharp1

Contextual Info: Hall 1C LT230A LT230A • GaAs Hall IC for Noncontact Switch Unidirestional magnetic field-type Features • Same temperature coefficient o f magnetic flux density as Outline Dimentions (Unit : Fmm) a magnet • O peration by sm all m agnet due to high se n s itiv ity

SQUARE WAVE GENERATOR

Abstract: 4 mhz oscillator Manufacturer Logos 14MT
Contextual Info: ENG INEERED COMPONENTS CO. 7 3 DE§ 33335Ö 3 DODOS f i l & | D T -5 0 -2 3 Iwprßfile o t 2l COMFATIBLE Thinny DIP T SQUARE WAVE GENERATOR MODULE j Full Military temperature range T 2 l input and output Output wavetrain can be started in sync with random events

Contextual Info: ENG INEERED COMPONENTS CO. 7 3 DE§ 33335Ö 3 DODOS f i l & | D T -5 0 -2 3 Iwprßfile t 2l COMFATIBLE Thinny DIP T SQUARE WAVE GENERATOR MODULE j Full Military temperature range T 2 l input and output Output wavetrain can be started in sync with random events

ST7-STICK

Abstract: ST7232X ST7MDT20-EVC ST72321J7 ST72321J9 ST72321R6 ST72321R7 ST72321R9 ST72324J6 ST72324K4
Contextual Info: ST7232x family A full range of compatible ROM and Flash 8-bit MCUs 8-bit core ALU Reset VPP TLI VSS VDD EVD OSC1 Program memory 8K-60KB Control RAM (384-2048B) LVD AVD Watchdog OSC OSC2 Port F PF7:0 (8 bits) The new series of ST7232x general purpose microcontrollers is ideal for applications requiring

N203

Contextual Info: F-199-1 samTëc P S S -0 8 -0 1 -T -S P S S -1 3 -0 1 -T -S 5,08mm .200' SP E C IFIC A T IO N S M a te s w ith : FWS. HFWS. SW Materials: Insu lator Material: Black LCP Max Processing Temp: 230°C for 60 sec. C ontact Material: Phosphor Bronze Plating: Sn over 50ji" (1,27|am) Nl

A1000-REV00k9040-IE

Abstract: AX-REM01K9050-IE a1000-fia3071-re A1000-FIV3005-RE A1000-REV00k6050-IE A1000FIA3105RE AX-FIM1024-RE
Contextual Info: Listino prezzi Validità 1° GENNAIO 2014 industrial.omron.it /67/23
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S124

Contextual Info: m MS S E R I E S POWER INDUCTOR • F E ATUR E S % fe;^ High s a tu r a t i o n curren t S u i t a b l e for r e fl ow soldering. Wi th m a g n e t i c a l l y s h ie l d e d « s i * • SMT type APPLICATION LCD fell DC /D C 4#H # OA e q u i p m e n t Note book Co mp ut e r

SMPS CIRCUIT DIAGRAM 5V 20A

Abstract: 400v 20A ultra fast recovery diode 20MT120UF diode 10a 400v
Contextual Info: I27124 rev. D 02/03 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery

Contextual Info: 5/13/02 5/ Bulletin I27124 rev. A 05/02 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

ultrafast diode 10a 400v

Abstract: X 0238 CE
Contextual Info: 5/13/02 Bulletin I27124 rev. B 10/02 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

ir igbt 1200V 40A

Abstract: 20MT120UF E78996 bridge
Contextual Info: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery

Contextual Info: 20MT120UFP Vishay High Power Products "Full-Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient RoHS • 10 µs short circuit capability COMPLIANT • HEXFRED antiparallel diodes with ultrasoft reverse

full bridge driver 600v

Abstract: 20MT120UFP ultrafast igbt S610A
Contextual Info: 20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

20MT120UFP

Contextual Info: 20MT120UFP Vishay High Power Products "Full-Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient RoHS • 10 µs short circuit capability COMPLIANT • HEXFRED antiparallel diodes with ultrasoft reverse

20MT120UF

Abstract: 20MT120UFP E78996 full bridge t
Contextual Info: 20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

Contextual Info: 20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

Contextual Info: VS-20MT120UFP www.vishay.com Vishay Semiconductors “Full Bridge” IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft

20mt120ufapbf

Contextual Info: 20MT120UFAPbF Vishay High Power Products "Full-Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient RoHS • 10 µs short circuit capability COMPLIANT • HEXFRED antiparallel diodes with ultrasoft reverse

Contextual Info: 20MT120UFAPbF Vishay High Power Products "Full-Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient RoHS • 10 µs short circuit capability COMPLIANT • HEXFRED antiparallel diodes with ultrasoft reverse

Contextual Info: VS-20MT120UFP www.vishay.com Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft