F 0552 Search Results

2SJ153

Contextual Info: M O S Field Effect Pow er Transistor 2SJ153 P f^ ;U / N ° 7 - M O S FET I i f f l 2SJ153 i, MOS FET T, 5 V H i * IC (c J; è Æ æ œ S O T t ë f r i S i i t X ' f * < , y w / 'i # K, y x ' f •/ f - > 7 f > X f t W B 0 ( T O : mm „ i , f f i - i x T ^ S fc * > ,

2SC2331

Abstract: SIRBA TC5344A if4g 2SA1008 PBT GF 20 PBT GF 10 fr 2SC2331 Y
Contextual Info: T -5 > • S / - h s < r> — Silicon Power Transistor 2SC2331 N R N x t ^ + '> 7 ; H * > 'J U > h =7 I i f f l 2 S C 2 3 3 1 ia iS fê x ^ ^ 7 > /X n -, v - f > rm t U K ? n f c 7 - f > 7'- w t - ^ ( f - f i ¿*<7 K ÿ ^ f '< £ i r M M x - t o iff : m m )

2SK872

Abstract: IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717
Contextual Info: M O S Field Effect Pow er Transistor 2SK872 N f t ^ ' ° 7 -M O S i 2 S K 8 7 2 i, N T '* > X ^ <, X >f -y f- > / ?• > /''.iii1 !?. # f f l — MOS F E T ( - ¥ - f Ì ! mm *s'i*^ lT J3 tj , ¡ÉfJSlìSEX / D C - D C 3 > ^ '- ^ i:iilt t „ m ° V d ss

L0565

Abstract: L0988 2SJ178 IR TK 19 544 ScansUX882
Contextual Info: NEC i i f / V 7 s— ? • S/— h mos 7 T MOS Field E ffe c t T r a n s is to r 2 S J1 7 8 MOS F E T ¡6 3 LJ$X<1V 51 2SJ178 Ü, P f t * / U f i MOS F E T T", 5 V b Ü i f ê B b 4* X ^ -y f- > y " • f " > < i - y , y i / / ^ K, # AX IC T - ’t 'o w F 7 > f7 i:ilt* to

RM4T

Abstract: r460 FET 2SK800 lg lx 221 TC6142 b0992 tt 22
Contextual Info: M O S Field Effect P ow er Transistor N ^ ^ ^ < 7 -M O S x 2S K 800ÌÌ, <, N - f - -y T x 4 ' > ' N> X/ > h m m s-ty — M OS > , Ü 5 J i & - v i - > X FET F E T T '^ ~ > 'f v ^ - fì : mm) f -> 7 ' * , D C -D C n > /< — # Î t ° V dss~ 450 V, o f i ^ > f f i Î Æ

2SK1149

Abstract: transistor sb 772
Contextual Info: Mos M O S Field Effect Pow er Transistor 2SK1149 N — l ' / ' r7 X 'f -y 9 - T . m 2SK1149 i, N - f - r * iz X & M O F E T > m MOS F E T T”, 5 V « i l * IC ¿Diti ¡ t S f g g j ^ - S T t È ^ it a x : mm 7 l f f t o i ' S i ^ ' i 7 f >J î ! * W D C - D C

TC-6201

Abstract: 2SK787 T460 L083S1213T AMC1085-3.3T
Contextual Info: MOS M O S Field Effect Pow er Transistor — MOS F E T x > r " s * > 7 ' m x i f f l 2 S K 787 Ü , + M O S F E T T* ^ > ÎS fiï*s'fS < , X -1* •/ -f- > ¥ i ì : mm & f) , rgjloJiSX 'f >yf <t> 3.2 + 0.2 4.7 MAX. 15.7 MAX. y o rn ili, m 1. 5 3 D c -D c

TRANSISTOR PNP B1443

Abstract: B1565 transistor B1274 transistor 13001 s 6d B1273 transistor B0615 DIODE Transistor B1203 transistor b1274 transistor b1134 transistor B1204
Contextual Info: Version 1.7 Produced in June 1998 Sharp Programmable Controller New Satellite JW20H Programming Manual * Ladder instruction version 04000 F — 44 O I F — 08 1 O C T 100 09000 0000 09000 F — 00 X F E R □ F — 05 D M P X F — 63 IN C 09000 09000 09000

2SK830

Abstract: je 243 26-JS STB-26 JE 170 B0952 JEX9 4h4 1 JE 33 TL08 015
Contextual Info: M N f t ^ l " / < 7 j i m - M O S O S F > 7 W -H ft ^ k ìlX f f iii h 'O , E E f f e c t P o w e r T r a n s is t o r T m 2SK830li, N f - t - T ' ^ - x y ^ x / y l - i ^ - M O S F E T T * F ie ld ¡t jJlìÈ X fl-M ¥ i i : ram -i DC-DC 3 m m ° V DSS=500 V, ID(DC)= ± 1 5 A

t1c8

Abstract: 2sk459 2SK45 JE 33 T460
Contextual Info: NEC m MOS Field E ffe c t P o w e r T r a n s is t o r + T f x r x 2SK459 FET I t f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK459ii, FET ^ • ^ E I/ P A C K A G E DIMENSIONS Unit '•mm T, S JS S D C -D C ^ v a -^, K y - f ^*4: ¿ f w a i i j f f l t L T f

TYA 0298

Abstract: PD17015 91IJ regulator KL SN 102 lcd SKE 1G DISPLAY 7NY PC10 uPD17015 757P 75tti
Contextual Info: 1— S • 5/ “ h Y N E C Mosmm\B\s& M O S In te g ra te d C ircu it ^ / ¿ P D 1 7 1 5 4 t ' - y h ' » ' <? \s?~ "s~7 • •7^T^nzi > h n - 7 juPD17015[i, 220MHz i T'SilfFT %~f') 7.^ —7 , PLL > > ir +f- -f +f, f c it/L C D =l> h n - ? / 1 7=^ ÿ ÿ ; i / • f a - - > ^ ' f f l Î Ê a : / ± 4 kf-y h •

2SK831

Abstract: T108 T460 2SK83
Contextual Info: M o s h = 7 > > ^ M O S Field E ffe c t P o w e r T ra n s is to r N f - t ^ /N° 7 - M O S FET i i f f l 2SK831 ü , t ì s t a f f i < , N - f -v x X / > h -i •/ - f > ¿ 'I i t t i - « B ' ' OT7 — M O S F E T T ' + > 1 , r H I T O m : mm) «5 3.2 + 0.2

2SK470

Abstract: 2sk47 btt4
Contextual Info: SEC j i i r / W Z M O S Field E ffe ct P o w e r T ra n sisto r J _ 2SK470 v ^ — MOS F E T X f m I i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2 S K 4 7 0 ii, F E T t\ X f y f > d c > ;< — i 7 • - t — • 'J 1 / —

transistor w bh 212

Abstract: SK FN 521 sol 4011 be 2SD1779 TN-6014 TN60 hia 51
Contextual Info: •7 s— "S7 • S ' — h - NEC ^ Silicon T ran sisto r 2SD1779 & m M M o « h FE -0 L * ' i f& V CE, „ t) f t w ^ - f i ^ mm) t - f - ' l $1 t L T f t i S T 'i - o hKE= 8 0 0 ~ 3 2 0 0 (a t V CE = 5 .0 V, Ic = 1 .0 A ) V CE(sat) = o / J '^ T * f F

2SK1132

Abstract: TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B
Contextual Info: MO M O S Field Effect Transistor MOS F E T 2SJ165 {i P • mm F E T T & 9, Ü X >f -y f - > ^ " r 'X ^ f X h L T H i t T - t c # tc , ± 0 :2 J V T R ^ ^ - f 'V F7 > y X ^ => 6‘ • x - i17 f £ - H i â ' C i '0 4-*•■■ < £> & o m 0.42 z s o & A ti4

FZ 300 R 06 KL

Abstract: PA1603 Transistor NP 3773 TRANSISTOR PHL 641 PA1603CX uPA1603 L0734 IS352 l 0734
Contextual Info: ^ • J Ê S Ù * ^ 0 ,7 - Com pound Field Effect P o w e r Transistor " ^ y /¿PA1603 à, i y A 1 6 3 \ or7“ - MO S F E T 'Z U H ' MOS F E T h m iÜ M tfifr & & Ô 4 / g -> -y ? '*7 - MOS F E T 7 W T - , ïü f f ln i^ .y ÿ W f f l ; ÿ > 7 ° 9° O

2SA1156

Abstract: TC-5548A T108 im0552
Contextual Info: — ~t NEC l Ï T / \ . • S ' — H T ' > i j 3 > ' r7 < S ilic o n 7 f S * à — Y P o w e r =7 > ' > * 9 T r a n s is t o r 2SA1156 P N P = * i Æ i f r f l 2 '> IJ □ > h ^ I i f f l 2SA115 6iiÜ 5igJtÜ5Ü Îi±x> f-yf V - ^ ^ y X ^ t , X ^ - y f- > ? " • I ^ ' j l U

Z623

Abstract: IRF 5350 2SK698 IRF 544 IRF 544 km Z62-3 irf 846 45661 kivs tt 22
Contextual Info: NEC m + T t v M O S Field E ffe c t P o w e r T ra n s is to r r x 2SK698 MOS F E T j i m 2S K 698Ü , N •f'-v ffiirC;0?iS; < , X 'i / > F ^ < x7 ~ I T i î ' , "/i~ > m Unit : mm) MOS F E T f ^ > X -f 'y -f- > 3.2 + 0.2 D C - D C n v ^ '- i 't t l f t o

Contextual Info: # a 2j J f c ' ' r 7 — M O S F E T M O S Field E ffect P o w e r Transistors 2S K19 5 4 ,2SK 19 54-Z N f ^ ; k N 0 ,7 - M O S F E T jim m 2SK1954 l ì N f- ^ * s u m ? '* '7 - MOS F E T T * is 0 Si JW]' X -i -y f- > DC-D C a V ^ - i ' C i l T ' t o # m

PM7540

Abstract: 2sc2275 2SA985 NEC TEA 7540 IC 2SA985 2SC2275A TEA-509 MEB-504 1444A 7824 5A
Contextual Info: zr—5?•zS—h x < 7 — ► ^f SiliconPowerTransistors 2SA985,985A/2SC2275,2275A PNP/NPNXkf h=7>i>7.9 NEC 1# £ f7 fé É 2 it o ^ ^ d i^ 6 o - i2 o w / U '« « 7 - 7 > r * > / < ia ^ u ¥ - fâ • mm f t i , { T / / ê iV '0 o h F E . f T * > * M E * > ffl« l/ W j!lV '.

2SJ154

Abstract: TC-7702 nec 2sJ154 pt 4115 Diode CVJ
Contextual Info: M O S Field E ffe c t P o w e r T ra n s is to r 2SJ154 MOS F E T i i f 2SJ154Ü , P f - ^ T 'A 'I Ë P '^ - M O S <r> a \ j j c i è & k æ x j f l F E T T% 5 V B i g J U C 7 f > ^ ^ x ¥ 4 Ï : mm t - t . 4.7 MAX. :* V ÎK Æ V W # / ' f tW K , S < ,

lO552

Abstract: 1T108 T460 0766125 2AV9
Contextual Info: NEC I ï f / \ f C o m p o u n d T ra n sisto r 7 CE1A3Q î& Î/ t r t S U M CE1A3Q ' i t — K, 1 L t n u ? ? 3 w ÿ 9 • ^ $ -y 9 F^ ic y > # F '7 ^ i £ I T * e n m m t - Ÿ ' Z f t M L f z , • -<— H igh h FE Î Ê t / i l ^ Ü F 7 > y ' X ^ T",

PA1501

Abstract: s 452-2 lt0246 NEC TRANSISTOR 8882 uPA1501 3TAE1 ssg diode fta 501 diode sg 5 ts
Contextual Info: ^ — 5 7 .= / — SEC ï ï t h Compound Field Effect Power Transistor / v t x ¿ N ^ ^ U x n ^ -M O S FET ¿ P A 5 I 1 7W I i f f l //PA1501 ±, 4 V . f g g j N f - ^ ^ 'V - M O S F E T £ 4 M OS F E T T “1 - C 0 T iJlffln ^ - y ^ IC K £ l * l / L T ^ Î - f W Ü - / 1 V ^ J^ ' 7 - - 7 Bn ^

2sk991

Abstract: 2SK9 ASGA 2sk99
Contextual Info: MOS M O S Field Effect P ow er Transistor N - ^ * ; i " N or7— M O S FET I i f f l mm 2SK991 ii, Nf-^*;w^i?'"o,7- M 0 S FET T*. 5 V * « * I C <nf t * tw J : & i £ K ï f t * * » T f é ì ' M x ^ y f > ^ x T O : mm t t . 4.8 MAX. -1.3±0.2 y t '/ ' f