EZ141 Search Results

semi rigid coax EZ-141-AL-TP-M17

Abstract: blf574 EZ-141-AL-TP-M17 rogers 5880 hf 224 capacitor BLF574 nxp AN9782 bridge rectifier ic
Contextual Info: BLF574 HF / VHF power LDMOS transistor Rev. 01 — 8 December 2008 Preliminary data sheet 1. Product profile 1.1 General description A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1.

BLF578 NXP

Contextual Info: BLF578XR; BLF578XRS Power LDMOS transistor Rev. 2 — 14 May 2012 Preliminary data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the

semi rigid coax EZ-141-AL-TP-M17

Abstract: blf574 TDK4532X7R1E475Mt020U EZ-141-AL-TP-M17 BLF574 nxp AN9782 rogers 5880 1800 ldmos BLF574,112 data sheet of multilayer pcb
Contextual Info: BLF574 HF / VHF power LDMOS transistor Rev. 02 — 24 February 2009 Product data sheet 1. Product profile 1.1 General description A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1.

blf578

Abstract: BLF578 NXP BLF578*2 semi rigid coax EZ-141-AL-TP-M17 EZ-141-AL-TP-M17 TRANSISTOR REPLACEMENT table for transistor TDK4532X7R1E475Mt020U
Contextual Info: BLF578 Power LDMOS transistor Rev. 02 — 4 February 2010 Product data sheet 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Application information

BLF578XR

Abstract: blf578xr_blf578xrs BLF578 BLF578 NXP EZ-141-AL-TP-M17 TDK4532X7R1E475Mt020U blf578xrblf578xrs 001aan207 semi rigid coax EZ-141-AL-TP-M17
Contextual Info: BLF578XR; BLF578XRS Power LDMOS transistor Rev. 3 — 25 June 2012 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the

Contextual Info: BLF578XR; BLF578XRS Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the

WZ-071

Abstract: wz-061 Zener c9v WZ 061 wz-040 eZ-081 WZ-046 WZ-075 Zener wz-192
Contextual Info: K ZEN ER VO LTAGE TYPE LOW NOISE V NOM. 500mW - 3.2 - 10 - 10 - WZ-061 WZ-065 BZ-061 BZ-065 BZ-071 WZ-075 6.1 6.5 7.1 BZ-075 BZ-081 WZ-081 7.5 8.1 - 10 30 10 30 0.5 10 30 0.5 10 30 10 - 100 4V,50MHz 1S2139-C 10-16® 4V 4~14® 10V - 100® 4V,50MHz - 40® 10V,50MHz

bz 148

Abstract: 1S2588 WZ-061 Zener wz-192 WZ-071 WZ-090 WZ 061 Zener c9v WZ090 wz-040
Contextual Info: 7954734 SAKATA U S A CORP IP ? JRC DE I 7T S 4734 K ZENER DIODES ZEN ER VO LTAGE TYPE V NOM. - BZ-050 5.0 WZ-054 BZ-054 5.4 10 - 10 - 1W - - 0.5 - 10 30 10 30 EZ-062 WZ-061 BZ-061 6.1 0.5 10 30 EZ-065 WZ-065 BZ-065 6.5 0.5 10 30 EZ-070 WZ-071 BZ-071 7.1

Contextual Info: BLF574XR; BLF574XRS Power LDMOS transistor Rev. 1 — 20 June 2013 Product data sheet 1. Product profile 1.1 General description A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the

str 2652

Contextual Info: 2 W 14 GHz INTERNALLY EZ1414_2E MATCHED POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES HIGH O U TPU T POW ER: 2 W MIN PACKAGE OUTLINE X-17 HIG H LINEAR GAIN: 7.0 dB MIN HIG H EFFICIENC Y: 30% TYP 8 .2 5 ± 0 .1 5 IN D U STR Y S T A N D A R D PACKAG ING IN TER N A LLY M ATCH ED FOR O PTIM UM

z1414

Contextual Info: 3 W 14 GHz INTERNALLY EZ1414.3E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS umtsm mm • HIGH OUTPUT POWER: 34.5 dBm TYP P A C K A G E O U TL IN E X -1 7 • HIGH LINEAR GAIN: 7.5 dB TYP • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGING

Contextual Info: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz under 1 msec - 10% • POUT = 200 W min. (250 W typ.) with 16 dB

M17/113-RG316

Abstract: RG214/U M17/75-RG214 crimp tools suhner M17/127 RG393 DATASHEET OF RG 188 A/U COAX CABLE GPS-X-02015-A RG 393 cable GPS-MS1E M17/74 RG213
Contextual Info: RF Design FOR GPS RECEIVERS APPLICATION NOTE u-blox ag • Zuercherstrasse 68 • CH-8800 Thalwil • Switzerland • Phone +41 1 722 74 44 • Fax +41 1 722 74 47 • www.u-blox.com RF Design for GPS receivers - Application Note PRELIMINARY Title RF Design for GPS receivers

Contextual Info: BLF578XR; BLF578XRS Power LDMOS transistor Rev. 3 — 25 June 2012 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the

BLF578

Abstract: EZ-141-AL-TP-M17 semi rigid coax EZ-141-AL-TP-M17 rogers 5880 BLF578 NXP murata CAPACITOR 4.7
Contextual Info: BLF578 Power LDMOS transistor Rev. 01 — 11 December 2008 Objective data sheet 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Production test information

NEZ1112-4A

Abstract: NEZ1414-4A NEZ1414-2A NEZ1011-2A NEZ1011-4A NEZ0909-6A NEZ1011-6A CASE X17 NEZ1011 2A NEZ0910-4A
Contextual Info: 6427414 N E C/ CALIFORNIA bM C/ CALIFORNIA 64C 01052 D T—39—11 DE § b M E 7 M m DOOIDSE □ J ~ MICROWAVE GaAs POWER FET NEZ SERIES-2A,4A,6A DATA SHEET PHYSICAL DIMENSIONS Units in m m . FEATURES • IN T E R N A L L Y M ATCHED 50i2 INPUT/O U TPU T IMPEDANCE