EY TRANSISTOR Search Results

BLS2731-10

Contextual Info: Philips Semiconductors Product specification Microwave Transistors General conditions. A characteristic may also be a set of related values, usually shown in graphical form. PRO ELECTRON TYPE NUMBERING FOR BLS-TYPES Basic type number Bo g ey This type designation code applies to discrete

transistor ey

Abstract: smd transistor EY SG3081 Sense Diode Array cd
Contextual Info: D evice T ype CD CD -j Un OJ NO D evice T ype D evice T ype CD CD -j Un CO NO en CD CD Ln Ui OJ ro D escriptio n s* o« CD CD Cn U ”i GO ro Cn D escriptio n D escriptio n is I” Ià s o SË 3 o p «£ » 7 3 5 o O ^ m S S K ey F e a t u r e s K ey F e a t u r e s

Contextual Info: STANLEY ELECTRIC CO LT]> S5E ]> • 4b?fllSfi 0G0E027 SflT « I i s r ^BT w ey . 7W /-6 3 PHOTODARLINGTON TRANSISTOR PD401 ■ FEATURES • • Package Dimensions HIGH DIRECTIVITY MOLDED EPOXY TYPE ■ APPLICATION • • • OPTIC FIBER OPTICAL SWITCH PHOTOSENSOR

transformer inrush

Abstract: EYRC500F511
Contextual Info: Product data sheet 94.108 EY-RC 500: Room automation station, ecos500 How energy efficiency is improved Powerful function modules in the ecos500 allow energy-optimised room control and the control of lights and blinds, and guarantee minimum energy consumption

Contextual Info: Product data sheet 94.185 EY-RC 208, 209: Room automation stations, ecos208, 209 How energy efficiency is improved Powerful function modules in the ecos allow energy-optimised room control and the control of lights and blinds and guarantee minimum energy consumption

ITE15F12

Contextual Info: 5Ü GEC PLESS EY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4315-1.2 ITE15F12/ITE15C12 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE The ITE15X12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

HCC4529B

Abstract: HCC4529BF HCF4529B HCF4529BC1 HCF4529BEY HCF4529BM1
Contextual Info: HCC4529B HCF4529B DUAL 4-CHANNEL OR SINGLE 8-CHANNEL ANALOG DATA SELECTOR . . . DATA PATHS ARE BIDIRECTIONAL 10 MHz OPERATION typical 3-STATE OUTPUTS ”ON” RESISTANCE 125 W TYPICAL @ 15V SUPPLY VOLTAGE RANGE = 3Vdc TO 18Vdc EY (Plastic Package) F (Ceramic Package)

A 4606

Abstract: transistor 718 4606 transistor sockets 4609
Contextual Info: TO-3 POWER TRANSISTOR SOCKETS k ey elc o.co m SOCKETS FOR TO-3 CASE VARIOUS MOLDED BOSS HEIGHTS The socket is held underneath the chassis and the semiconductor is inserted into the contacts of the socket holding the assembly in position. To complete the mounting, use 6-20 screws to engage the

Contextual Info: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT690 ISSUE 1 - NOVEMBER 1995 Ci L L —I—I Bi c ,n = =□ c? I r Z D b2 I I Ey Cîl I Ei PAFtTMARKING DETAIL- T690 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT V V C BO 45

transistor IRF520

Abstract: IRF520 mos die 312c IRF52
Contextual Info: 3QE D 7 T 2 C 237 0D30130 5 • Q S-THOMSON SGS-THOMSON IRF520 CHIP Ey N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 9 5 x9 5 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION:

EY transistor

Abstract: G3VM-601BY G3VM-601EY transistor ey G3VM Relay UL relay omron 5 pin omron 5v 6 pin relay 601by
Contextual Info: MOS FET Relay G3VM-601BY/EY MOS FET Relay for Switching Analog Signals, with an I/O Dielectric Strength of 5 kVAC Using Optical Isolation • Switches minute analog signals. ■ Switches AC and DC. ■ Load voltage: 600 V. ■ I/O dielectric strength: 5 kVAC.

Contextual Info: Sources K EY SPECIFICATIONS AND DEFINITIONS Narda DROs operate in the 3 to 18 GHz frequency range and typically use bipolar and FET active devices, de­ pending on the requirement. These units are designed for MIL-E-5400 and MIL-E-16400 environments. Perti­

Contextual Info: S i GEC PLESS EY ADVANCE INFORMATION S E M I C O N D U C T O R S SL3245 3GHz NPN TRANSISTOR ARRAY The SL3245 is a monolithic array of live high frequency low current NPN transistors. The SL3245 consists of 3 isolated transistors and a differential pair in a 14 lead SO package. The

SP8601

Abstract: SP8601A
Contextual Info: A PSLemEicon SS EY du ctors i SP8601A & B 150MHz + 4 The SP8601 is an asynchronous ECL counter with a current steered output which can be used to drive TTL or CMOS. Biased externally, it may be directly driven from an ECL !J source. Vcc 0V> I CLOCK INPUT

half adder ttl

Abstract: MA914 MA92 non inverting buffer 8 volts via apollo vp GEC Marconi GEC Plessey m SHR8
Contextual Info: GEC PL ESS EY S I M I , O \ I I, I. T O MAMMA Sea of Gates Radiation Hard Advanced Gate Array Design System K -> S21600FDS Issue 1.2 Novem ber 1990 Features • Channelless array architecture • Typical gate delay 1 OnS - toggle rates of 100MHz achievable

Contextual Info: H OlM EYüJELL/SS ELEK-, M IL 03 D Ë| 4551Ö72 DDGG3].t □ T -9 2 -//-Û 7 Honeywell Radiation Hardened Bipolar Gate Array Family " Preliminary HM3500R, HVM10000R Family Features • Strategic Radiation Hardness Allows Spaced Based System Operations • Broad Performance Optimized Family Allows Flexible

Contextual Info: 3DE D a» • 7cîBc]237 00311b7 ü ■ ^p37' 5 SCS-THOM SON iUHETTBOHOeS 2N3250 2N3251 S G S-THOMSON AMPLIFIERS AND SWITCHES DESC RIPTIO N - T h e 2 N 3 2 5 0 and 2N 32 51 are silicon planar epitaxial P N P transistors in Jedec T O -1 8 m etal case. T h ey

transistor B 892

Abstract: ir transmitter receiver transistor 892 ir remote decoder IC S852T H 928G 3741B IC for IR receiver 48C892
Contextual Info: Tem ic S e m i c o n d u c t o r s Dedicated ICs and Transistors for Keyless Entry/ Remote Control Fun ctio n Package K ey Featu res ! IR Transmitter / Receiver B P V 23N F PIN diode IR p h o to detcctor, 875 to 9 5 0 nm, sensitivity typical 65 jtA Side v iew

AXS215SF122

Contextual Info: Product data sheet 94.200 EYE 200: DDC single-room controller, ecos200 How energy efficiency is improved Individual unitary control, fan coil units, chilled-beam control system, etc. Features • Part of the SAUTER EY-modulo 2 system family • Individual unitary control, fan coil units, chilled-beam control system, etc.

Contextual Info: MOS FET Relays G3VM-601BY/EY Analog-switching MOS FET Relays with a Dielectric Strength of 5 kVAC between I/O Using Optical Isolation. • Switches minute analog signals. • Switching AC and DC. • Peak load voltage of 600 V. • Dielectric strength of 5 kVAC between I/O.

Contextual Info: K EY SPECIFICA TIONS AND DEFINITIONS Narda DROs operate in the 3 to 18 GHz frequency range and typically use bipolar and FET active devices, de­ pending on the requirement. These units are designed for MIL-E-5400 and MIL-E-16400 environments. Perti­ nent specifications are discussed below.

SL6444

Contextual Info: Si 37bflS25 0D2GCIG5 MEL « P L S B GEC P L ES S EY SEMI CONDUCTORS NOVEMBER 1993 DS3224 2.3 SL6444 1GHz AMPLIFIER / MIXER The SL6444 Amplifier and Mixer is designed for use in Cordless Telephones, Cellular Radios, Pagers and Low Power receivers operating at frequencies up to 1GHz. It contains a

Contextual Info: APLE SS EY W S em ico n d u cto rs. ZN450 SINGLE CHIP 3% DIGIT DVM 1C The 2N450 is a complete digital voltmeter fabricated on a monolithic chip and requires only ten external, passive components for operation. A novel charge-balancing conversion technique ensures good linearity. The auto-zero

OV56

Abstract: sp5051
Contextual Info: P LE SS EY SEMICONDUCTORS 1SE D • 7220513 # PLESSEY Sem iconductors 0 0C HSS 1 ■ ■■ . . . — S ■ n T-SO-o°i SP5052 2.3GHz SINGLE CHIP FREQUENCY SYNTHESISER The SP5052, used w ith a voltage controlled oscillator form s a com plete phase locked loop capable of synthesising