EY 85 RECTIFIER Search Results

STK 1000 watt power amp circuit diagram

Abstract: STK 439 Stereo amplifier STK 025 power amplifier STK 441 Stereo amplifier 1000 watt RMS professional audio power amplifier schematic Circuit stk 025 audio amplifier ic audio power amp stk 025 AD8015 Circuits STK power amplifier Dc 12v transistor stk 630 replacement
Contextual Info: NEW PR O D U CT APPLICATIONS - 1995 +5V n : 100Q v out “ I v .n I -5 V FULL-WAVE RECTIFIER + 2.5V +5V A | I A REF REF IN - IN(+) A V dd D V dd A • AIN1 (+) A D 7714 • AIN1 (-) I L \ AGND • DGND • i ANALOG DEVICES DATA CONNECTOR 3V jitC A D SP-2103

OM100L60CMIS

Abstract: OM75L60CMIB OM75L60CMIS
Contextual Info: Patent Pending OM100L60CMIS, OM75L60CMIS, OM75L60CMIB CERMOD HERMETIC HIGH POWER MODULES, THREE PHASE BRIDGE, IGBT’S 75 & 100 A, 600V Three Phase Bridge Configuration in Ceramic to Metal Sealed Modules FEATURES • • • • • • • Rugged, Lightweight Hermetic Ceramic Package

Contextual Info: Bulletin 127502 08/97 International IS R Rectifier m t . .KB THREE PHASE BRIDGE SERIES Power Modules Features • 130 A 160 A Package fully compatible with the Industry standard INT-A-pak power modules series ■ High thermal conductivity package, electrically insulated case

Contextual Info: Bulletin 12086/A International M Rectifier SD1500C.L SERIES STANDARD RECOVERY DIODES Hockey Puk Version Features 1600A • W id e cu rrent range ■ H igh vo ltag e ratin gs up to 3 0 0 0 V ■ H igh su rg e cu rrent ca p a b ilitie s ■ D iffu sed junction

Contextual Info: lO t4ÔS545S OOlGfllM IN T E R N A T IO N A L R E C T IF IE R R 1 64 R34B SERI ES 3000-2400 VOLTS RANGE 820 AMP AVG HO CK EY PUK DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS PART NUHGER INTERNATIONAL VflRH. V„ - VI Hax. rap . paak ravaraa and d t r a c t voltaga

K1530

Abstract: VSK1540 VSK1530 VSK1520
Contextual Info: MICRO OUALITY / 15 Amp Schottky Rectifiers S E M IC O N D U C T O R , IN C . 150°C MAX Tj 20 Volt, 30 Volt and 40 Volt VRRM .600 Volt VF AT lF = 15.0 Amps Very Fast Switching Speed Standard DO 203AA Formerly DO-4 Case JED EC P ackage LTR. INCHE S M ILL IM E T E R S

3PHA 20

Abstract: 3pha diode 3PHA IPHX36021 MHPM7B15A60A cms IGBT application
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document bv MHPM7B15A60WD DATA — Hybrid Power Modu[e Integrated Power Stage for 1.0 hp Motor Drives This module integrates a 3-phase input rectifier bridge, 3-phase output invetier and brake transistor/diode in a single convenient package. The output

Contextual Info: Data Sheet No. PD-9.884 INTERNATIONAL RECTIFIER | I « R | AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN7054 IRHN8054 N-CHANNEL MEGA RAD HARD s 60 Volt, 0.0250, MEGA RAD HARD HEXFET Product Summary International Rectifier’s M EG A R AD H A R D Technology HEXFETs

Contextual Info: OM9007SC OM9008SC OM9009SC OM9010SC POWER MOSFETS & FAST RECOVERY RECTIFIER IN HERMETIC ISOLATED JEDEC M0-078 PACKAGE 100V Thru 500V, Up To 14 Amp, N-Channel MOSFET And Fast Recovery Power Rectifier FEATURES • • • • • Uncommitted M O S F E T And Rectifier In One Package

MIG20J

Contextual Info: TOSHIBA MIG20J906H TOSHIBA INTEGRATED 1GBT MODULE SILICONE N CHANNEL 1GBT MIG20J906H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ● Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package ● Output Inverter Stage :

HFA16TB60

Abstract: HFA20TB120 FA08TB60 hfa16tb60c HFA15TB60 Telex-95219
Contextual Info: International [ « ] Rectifier i r ylPPUCKTION NOTES PUBLISHED BY INTERNATIONAL RECTIFIER. 233 KANSAS STREET. EL SEGUNDO. CA 90245 310 322-3331 AN-993 Utilizing HEXFRED Ultra-Fast Recovery Diode Die In Assembly (HEXFRED is a trademark of International Rectifier)

Contextual Info: -INTERNATIONAL RECTIFI ER IOR D5 DE INTERNATIONAL RECTIFIER f I 4055455 □□D774T L m u iiiL ^ e B e s^ œ B E ^ ^ 7-'- 3. ¿T- P # Data Sheet No. PD-3.094 S30E & S30EH S E R IE S 800-200 VOLTS RANGE 1220 AMP RMS, RING AM PLIFYING GATE PHASE CO N TRO L T Y P E H O C K EY PUK S C R s

452 thyristor

Abstract: IRK E78996
Contextual Info: Bulletin 127132 rev. D 09/97 International IS R Rectifier IRK.71, .91 SERIES THYRISTOR/ DIODE and THYRISTOR/THYRISTOR NEWADD-A-pak Power Modules Features • Electrically isolated: DBC base plate ■ ■ 3500 VRUS isolating voltage Standard JE D EC package

v105

Abstract: 16S90 tsr 002
Contextual Info: Bulletin 127136 rev. B 09/97 International Rectifier I S R i THYRISTOR/THYRISTOR r k u / Features Electrically Isolated: DBC base plate • ■ ■ ■ 350 0 V RMS Isolating voltage Standard JED E C package Simplified mechanical designs, rapid assembly Auxiliary cathode terminals or wiring convenience

1B50

Abstract: THC-1500 lrk9 20as15
Contextual Info: Bulletin 127132 rev. D 09/97 International ISR Rectifier IRK.71, .91 SERIES THYRISTOR/ DIODE and THYRISTOR/THYRISTOR NEWADD-A-pak Power Modules Features • Electrically isolated: DBC base plate ■ 3500 VRMS isolating voltage ■ Standard JED EC package

H188

Contextual Info: Data Sheet No. PD-9.887 I«R INTERNATIONAL RECTIFIER AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTORS IRHM7054 IRHM8054 Z N-CHANNEL MEGA RAD HARO Product Summary 60 Volt, 0.027», MEGA RAD HARD HEXFET International Rectifier's M E G A RAD H A R D Technology HEXFETs

Contextual Info: IÇ2R I N T E RÌDATI O N A L R E C T I F I E R • 4055452 0010T31 5 ■ T 1Ö/''Ä3 R77R SERIES 34 0 0 -2 80 0 VOLTS RANGE 3740 AMP AV6 H O CK EY PUK D I F F U S E D JU NC TI ON R E C T I F I E R D I OD ES VOLTAGE RA TI NG S i PART NUMBER j J » Vr r h . V r -

P channel 600v 20a IGBT

Abstract: mig20j
Contextual Info: TOSHIBA MIG20J906H TOSHIBA INTEGRATED 1GBT MODULE SILICONE N CHANNEL 1GBT MIG20J906H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package • Output Inverter Stage :

452 s90

Abstract: HALL 95A irkt92 IRK 92 DEVICE CODE N
Contextual Info: Bulletin 127132 rev. D 09/97 International IS R Rectifier IRK.71, .91 SERIES THYRISTOR/ DIODE and THYRISTOR/THYRISTOR NEWADD-A-pak Power Modules Features • Electrically isolated: DBC base plate ■ ■ 3500 VRUS isolating voltage Standard JE D EC package

ifr220

Contextual Info: IRFR220, IR FU220 Semiconductor July 1999 Data Sheet 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

BU 103t transistor

Abstract: IC LM234 134H-6 diode cross reference 1N457 lm3341 lm 234 diode
Contextual Info: Semiconductor May 1998 LM134/LM234/LM334 3-Terminal Adjustable Current Sources General Description LM 234-3 and LM 134-6/LM 234-6 are specified as true te m ­ perature sensors with guaranteed initial accuracy of ±3°C and ±6°C , respectively. These devices are ideal in rem ote

Contextual Info: M X -CDM, INC. MiXed Signal ICs DATA BULLETIN MX469 1200 2400 4800bps MSK Modem Features Applications • Selectable Data Rates 1200/2400/4800bps • Radio and General Applications • Full-Duplex MSK • PMR/Cellular Signaling • RX and TX Bandpass Filters

vacuum tube bendix

Abstract: vacuum tube bendix 6754 AN 6754 reactance tube Bendix tubes Rectifier Tubes
Contextual Info: _ File Catalog: Electron Tube Products Section: Receiving Tubes 6754 Je m / if Type TE-36 Generic Type 4 1 2 A RELIABLE HARD GLASS MINIATURE FULL-WAVE RECTIFIER DESCRIPTION ELECTRICAL RATINGS* Heater v o lt a g e * * . . Heater current .

1SS90

Contextual Info: Bulletin 127135 rev.C 09/97 International iORRectifier irk u /V 71 ,91 s e rie s THYRISTOR/ THYRISTOR NEWADD-A-pak Power Modules Features 75 A 95 A • Electrically Isolated: DBC b a s e p la te ■ 3 5 0 0 V RMS is o la tin g v o lta g e ■ S ta n d a rd JE D E C p a c k a g e