EXPORT U22 Search Results

IT8510E

Abstract: RTL8201CL IT8510 EXPORT U22 SiS 963
Contextual Info: Chapter2 Major Components UNIWILL COMPUTER SIP CO., LTD Export Processing Zone, No. 200, Central SuHong Road, SuZhou Industrial Park, JiangSu, P.R. China TEL: 86-512-62580801 FAX: 86-512-62588804 URL: http:// www.uniwill.com.tw/ 255KI5 Rev : A Page 1 - 37

P71EN0

Abstract: VTT18 AA27 op Component z1508 QT4532KL080HC Z2301 IT8510 SAMA5 SADQ42 U16H
Contextual Info: Chapter2 Major Components UNIWILL COMPUTER SIP CO., LTD Export Processing Zone, No. 200, Central SuHong Road, SuZhou Industrial Park, JiangSu, P.R. China TEL: 86-512-62580801 FAX: 86-512-62588804 URL: http:// www.uniwill.com.tw/ P71EN0 Rev : A Page 1 - 40

act4485

Contextual Info: Standard Products ACT4485 Dual RS485 Interface Transceiver Radiation Hardened Preliminary www.aeroflex.com/Avionics December 5, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation performance - Total dose ≥100 krads Si Designed for RS485 Interface Applications

Mini-Mold

Contextual Info: SURFACE MOUNT LED LAMPS Low Current Type IF≦10mA Mini-molded chip LEDs SML-211 Series Yellow Package Size （mm） Orange Red AlGaInP on GaAs 590nm 611nm 630nm SML-211YT SML-211DT SML-211UT 2012 (0805) 2.0x1.25 t=0.8 • Absolute Maximum Ratings（Ta=25℃）

AK9813BF

Contextual Info: Package Outline „ 24pin VSOP Unit: mm +0.20 1.25 −0.10 1.15 A *5.6 1 7.6±0.2 13 24 12 0.2 +0.03 0.17 −0.10 0.65 0.08 M Detail A 0.1 0.5±0.2 *7.8±0.1 0.08 NOTE: Dimension “*” does not include mold flash. ・Device DAC+EEPROM ：AK9813BF 0~10°

block diagram of energy saving system

Abstract: block diagram of energy saving AK93C12A DSA0013246
Contextual Info: ASAHI KASEI [AK93C12A] AK93C12A 128Kbit Serial CMOS EEPROM Features † ADVANCED CMOS EEPROM TECHNOLOGY Preliminary † LOW VCC OPERATION … Vcc = 1.8V ~ 5.5V † 131072 bits, 8192Õ16 organization † SERIAL INTERFACE - Interfaces with popular microcontrollers and standard microprocessors

Contextual Info: SIP5 LSI Assembly Units : mm • SIP5 2.4±0.2 1.2 4.9±0.2 3.5±0.5 9.6±0.5 11.8±0.2 5 1 2.54 0.6 0.6 0.8 1.3 ∗ The contents described herein are subject to change without notice. 0.3±0.1 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any

SSOP-A16

Contextual Info: SSOP-A16 LSI Assembly Units : mm • SSOP-A16 9 1 8 1.5±0.1 4.4±0.2 0.11 6.2±0.3 16 0.8 0.3Min. 6.6±0.2 0.15±0.1 0.1 0.36±0.1 ∗ The contents described herein are subject to change without notice. Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any

SQFP-T80C

Contextual Info: SQFP-T80C LSI Assembly Units : mm • SQFP-T80C 16.0±0.3 14.0±0.2 61 40 80 21 1 20 0.125±0.1 0.1±0.1 1.4±0.1 41 0.5 14.0±0.2 16.0±0.3 60 0.65 0.3±0.1 ∗ The contents described herein are subject to change without notice. 0.1 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any

Contextual Info: IrDA Modules Photo Link Modules zProduct Designation R P M ∗∗ ∗∗ − ∗∗ ∗∗ Packaging Specification E2A/E3A Embossed tape 1pin, sproket hool side, Side view type E4A Embossed tape (1pin, sproket hool side, Top view type) Shield case The main classifications

Contextual Info: MSOP8 LSI Assembly Units : mm • MSOP8 5 1 4 0.29±0.15 0.6±0.2 8 2.8±0.1 4.0±0.2 2.9±0.1 +0.05 0.145−0.03 0.9Max. 0.75±0.05 0.08±0.05 0.475 0.22+0.05 −0.04 0.65 0.08 S ∗ The contents described herein are subject to change without notice.

Contextual Info: March 2014 CCD Linear Image Sensor CCD Charge Coupled Device TCD1305DG 3648-elements, embedded electronic shutter function, for barcode scanner. The TCD1305DG is a high sensitive and low dark current 3648−elements linear image sensor. The sensor can be used

DIP18

Contextual Info: DIP18 LSI Assembly Units : mm • DIP18 22.9±0.3 10 1 9 0.51Min. 3.95±0.3 6.5±0.3 18 7.62 3.29±0.2 0.3±0.1 2.54 0.5±0.1 ∗ The contents described herein are subject to change without notice. 0° ~ 15° Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any

TCD1304

Abstract: TCD1304DG
Contextual Info: March 2014 CCD Linear Image Sensor CCD Charge Coupled Device TCD1304DG 3648-elements, embedded electronic shutter function, for barcode scanner. The TCD1304DG is a high sensitive and low dark current 3648−elements linear image sensor. The sensor can be used

verilog code for 128 bit AES encryption

Abstract: verilog code for 32 bit AES encryption verilog code for aes encryption vhdl code for aes decryption vhdl code for cbc vhdl code for AES algorithm TSMC 90nm FIPS-197 SP800-38A verilog code for AES algorithm
Contextual Info: AES-P Programmable AES Encrypt/Decrypt Core Conforms to the Advanced Encryption Standard AES standard (FIPS PUB 197) Single module efficiently integrates multiple AES functions and modes Run-time programmable for: − Encryption or Decryption − Cipher Key length:

Contextual Info: HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = −50 V, IC = −150 mA (max) z High hFE: hFE = 120 to 400

Contextual Info: 2SA1873 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1873 Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)

Contextual Info: DF3A6.8FV TOSHIBA Diodes for Protecting against ESD DF3A6.8FV Product for Use Only as Protection against Electrostatic Discharge ESD 0.22±0.05 Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55 to 150 °C Storage temperature range

Contextual Info: 2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3326 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)

Contextual Info: 2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1163 Audio Frequency General Purpose Amplifier Applications • • • • • • Unit: mm High voltage: VCEO = −120 V Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)

Contextual Info: 2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832 Audio Frequency General Purpose Amplifier Applications • • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA)

Contextual Info: JDH3D01FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01FV ○ For wave detection 0.22±0.05 Symbol Rating Unit Reverse voltage VR 4 V Forward current IF 25 mA Junction temperature Tj 125 °C Tstg −55 to 125 °C Storage temperature range Note: Using continuously under heavy loads e.g. the application of high

Contextual Info: 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: Unit: mm VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)

Contextual Info: DF3A6.2FV TOSHIBA Diodes For Protecting Against ESD DF3A6.2FV Product for Use Only as Protection against Electrostatic Discharge ESD 0.22±0.05 Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55 to 150 °C Storage temperature range