EXCEL SEMICONDUCTOR INC Search Results

Teradyne

Abstract: teradyne tester test system ziatech
Contextual Info: ISP Cost-of-Ownership Click on one of the following choices: • • • • ISP Cost-of-Ownership Excel v.5 Worksheet Excel v.4 Worksheet Go to Main Menu 1996 Lattice Semiconductor Corporation. All rights reserved. TM ISP Cost-of-Ownership Analysis ISP Cost-of-Ownership

irf44z

Abstract: 3525 PWM 5n03 IRFZ44 parallel 5bp transistor making AN1520 MTP75N03HDL two transistor forward 2p02 IRFZ44 equivalent
Contextual Info: MOTOROLA Order this document by AN1520/D SEMICONDUCTOR APPLICATION NOTE AN1520 HDTMOS Power MOSFETs Excel in Synchronous Rectifier Applications Prepared by: Scott Deuty, Applications Engineer Motorola Inc. A new technology, HDTMOS, was recently introduced

ES25P40

Contextual Info: EE SS II ADVANCED INFORMATION Excel Semiconductor inc. ES25P40 4Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS • Single power supply operation - 2.7V -3.6V for read and program operations

ES25P16

Abstract: SA28 SA29 SA30 208mil
Contextual Info: EE SS II ADVANCED INFORMATION Excel Semiconductor inc. ES25P16 16Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS • Single power supply operation - 2.7V -3.6V for read and program operations

12 volt dc to 220 volt ac inverter 1000 watts

Abstract: 220 ac INVERTER without transformer 12 VOLTS INVERTER CIRCUIT USING MOSFET osram transistor Electronic ballast AR181 FULL WAVE RECTIFIER CIRCUITS 220 AC motorola AR181 Motorola Bipolar Transistor BOOK osram ballast circuit 12 volt ac to dc bridge rectifier circuit
Contextual Info: BIPOLAR TRANSISTORS EXCEL IN OFF-LINE RESONANT CONVERTERS Prepared by Jim Spangler, Applications Engineer Motorola Semiconductor Products Inc Phoenix, Az. Reprinted with permission of POWERTECHNICS, March, 1986 issue. 1986 Darnell Research Inc. All rights reserved.

E0000

Abstract: ES25P80 SA10 SA11 SA12 SA13 SA14 SA15
Contextual Info: EE SS II ADVANCED INFORMATION Excel Semiconductor inc. ES25P80 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS • Single power supply operation - 2.7V -3.6V for read and program operations

ES29LV160DB-90TG

Abstract: si 462 laser diode ES29LV160D 12wg ES29LV160DT
Contextual Info: EE SS II - Preliminary - Excel Semiconductor inc. ES29LV160D 16Mbit 2M x 8/1M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory - Preliminary Draft - GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC

ES29DL320

Abstract: 3FE00
Contextual Info: EE SS II ADVANCED INFORMATION Excel Semiconductor inc. ES29DL320 32Mbit 4M x 8/2M x 16 CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory GENERAL FEATURES • Power consumption (typical values) - 15uA in standby or automatic sleep mode - 10mA active read current at 5MHz

ES29LV400D

Abstract: ES29LV400DT-70RTG ES29LV400DB-70RTG
Contextual Info: EE SS II Excel Semiconductor inc. ES29LV400D 4Mbit 512Kx 8/256K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations

ES29LV160D

Abstract: es29lv160dt-70rtci ES29LV160DT-70RTG ES29LV160DT-70RTC
Contextual Info: EE SS II Excel Semiconductor inc. ES29LV160D 16Mbit 2M x 8/1M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations

ES29LV400EB-70TGI

Abstract: ES29LV400EB-70TG ES29LV400E BB 555 ES29LV400EB
Contextual Info: EE SS II Excel Semiconductor inc. ES29LV400E 4Mbit 512Kx 8/256K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations

MT48LC2M32B2-5

Abstract: timing analysis example MSC8122 MT48LC2M32B2 AN3014 MSC8122MP8000 MSC8122TMP4800V MSC8122TMP6400 MSC8122TVT4800V MSC8122TVT6400
Contextual Info: Freescale Semiconductor Application Note AN3014 Rev. 1, 8/2007 AC Timing Analysis Between SDRAM and the StarCore -Based MSC8122 DSP By Boaz Kfir This application note and the associated Excel spreadsheet assist in the analysis of AC timing for the interface between an

ES29LV160EB-70TGI

Abstract: es29lv160eb-70tg ES29LV160EB-70WGI ES29LV160E ES29LV160EB-70TCI EXCEL SEMICONDUCTOR INC
Contextual Info: EE SS II Excel Semiconductor inc. ES29LV160E 16Mbit 2M x 8/1M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations

ES29LV320EB-70TG

Abstract: es29lv320eb-70tgi ES29LV320E si 462 laser diode ES29LV320 ES29LV320ET-70WGI ES29LV320ET-70TGI
Contextual Info: EE SS II Excel Semiconductor inc. ES29LV320E 32Mbit 4M x 8/2M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V ~ 3.6V for read, program and erase operations

Contextual Info: ” Semiconductor, Inc. TC500EV EVALUATION SYSTEM FOR TC5XX A/D CONVERTERS FEATURES GENERAL DESCRIPTION • TC500EV is an evaluation and development system for TelCom's TC5xx family of dual slope integrating converters.

Contextual Info: SMA5913B~SMA5942B Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value

Contextual Info: 1N5913B~1N5940B Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit

DIODE 920B

Abstract: diode 918b 931b diode DIODE 926B 932B diode diode 913b
Contextual Info: SMA5913B~SMA5940B Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value

DIODE 920B

Contextual Info: SMB5913B~SMB5940B Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value

Contextual Info: SMB5913B~SMB5942B Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value

Contextual Info: SMA5913B~SMA5940B Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value

Contextual Info: SMB5913B3~SMB5942B3 Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value

Contextual Info: BZX84C Series Zener diode Features 1. High reliability 2. Wide voltage range available 3. Low reverse current level 4. Small outline package for space savings 5. Surface mount package Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter

4730A diode

Abstract: 4737a+zener
Contextual Info: SMA4728A~SMA4764A Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value