s29gl032n90
Abstract: MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11
Contextual Info: covPG00-00071e.fm 1 ページ ２００７年５月１０日 木曜日 午前１１時２９分 For further information please contact: Japan FUJITSU LIMITED Electronic Devices Business Unit Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,
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covpg00-00071epg00-00071-2es29gl032n90mb15h121+8s29gl064n90s29gl256p90s29gl01gp13s29gl128p90mb86a20s29al008j55s29al016j55s29gl128p11
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S29JL032H70
Contextual Info: FUJITSU MICROELECTRONICS PRODUCT GUIDE 2009.10 Product Guide [ ASSP•Memory•ASIC ] PG00-00091-3E Technical Documentation of Electronic Devices DATA BOOK PRODUCT GUIDE DVD (GENERAL) DATA SHEET MANUAL FUJITSU SEMICONDUCTOR DATA SHEET Semiconductor Data Book
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pg00-00091-3eacd-10131cd-10131ds04-27211-5e+2mb3789s29jl032h70
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3654P
Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Contextual Info: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable
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16m-bit64m-bit68-pin88-pin+14mb98c81013-10mb98c81123-10mb98c81233-10mb98c81333-103654pdram 4464jeida dram 88 pinmb8142604464 dram1024m-bit4464 64k drammb81g83222-008mb814400a-704464 ram
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ES29LV800DB-90TG
Abstract: ES29LV800 ES29LV800DB-12TG ES29LV800D ES29LV800DB-70WG ES29lv800dt-70 000000X ES29LV800DB-70WGI ES29LV800DB-70TG ES29LV800DB-70TC
Contextual Info: EE SS II Excel Semiconductor inc. ES29LV800D 8Mbit 1M x 8/512K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations
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es29lv800d8/512k125oc16kbyte+1532kbyte64kbyte15sectorses29lv800dtes29lv800db48-pines29lv800db-90tges29lv800es29lv800db-12tges29lv800db-70wges29lv800dt-70000000xes29lv800db-70wgies29lv800db-70tges29lv800db-70tc
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ES29LV800EB-70TG
Abstract: es29lv800et-70tg ES29LV800ET-70WC ES29LV800 ES29LV800E ES29LV800ET-70TGI ES29LV800EB-70TGI ES29LV800ET70TG ES29LV800EB
Contextual Info: EE SS II Excel Semiconductor inc. ES29LV800E 8Mbit 1M x 8/512K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations
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es29lv800e8/512k125oc16kbyte+1332kbyte64kbyte15sectorses29lv800etes29lv800eb48-pines29lv800eb-70tges29lv800et-70tges29lv800et-70wces29lv800es29lv800et-70tgies29lv800eb-70tgies29lv800et70tg
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