EUDYNA MMIC Search Results

Eudyna Devices

Abstract: EMM5206LP microwave sensor RO4003C k band oscillator 2329500 JESD22-A114-C EUDYNA Eudyna high power Canton AS 100 SC
Contextual Info: EMM5206LP K Band Oscillator MMIC FEATURES ・ High Output Power : Pout =5 dBm @ Vdd = 4 V typ. ・ Low Power Consumption : Idd = 20 mA @ Vdd = 4 V (typ.) ・ Low Phase Noise : n = -100 dBc/Hz @ 100 kHz offset, fosc = 24 GHz ・ Low Spurious Level : RJ2nd < -40 dBc

mmic n1

Contextual Info: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the

Contextual Info: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the

Eudyna Devices

Abstract: Doppler Sensor K-band DOPPLER 24ghz k band oscillator doppler sensor mmic case styles EMM5206LP EUDYNA Canton AS 100 SC RM1101
Contextual Info: EMM5206LP K Band Oscillator MMIC FEATURES ・High Output Power : Pout=5dBm @Vdd=4V typ. ・Low Power Consumption : Idd=20mA @Vdd=4V (typ.) ・Low Phase Noise : Φn=-100dBc/Hz @100KHz offset, fosc=24GHz ・Low Spurious Level : RJ2nd<-40dBc ・High Reliability, High Breakdown Voltage : Vgdo=20V, Igdo=160uA

EUDYNA

Abstract: ka-band mixer fmm5117 A114 es JESD22-A114-C RO4003
Contextual Info: ES/FMM5117YE K,Ka-Band Down-Converter MMIC FEATURES •High Conversion Gain, Gc = -11 dB Typ. •High Linearity •Broad RF Frequency Band ; 20 - 30 GHz •SMT Laminate Package (YE Package) •Impedance Matched Zin/Zout = 50 DESCRIPTION The FMM5117YE is a double, single balanced diode mixer downconverter MMIC. The device consists of a low noise mixer, LO

FMM5048

Abstract: FMM5048GJ EUDYNA 1425GHz Eudyna Devices power amplifiers ku vsat amplifier Eudyna Devices Fmm5048GJ
Contextual Info: FMM5048GJ VSAT MMIC FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION

ka-band mixer

Abstract: A114 es FMM5116YE JESD22-A114-C RO4003 Ka-band
Contextual Info: ES/FMM5116YE K,Ka-Band Up-Converter MMIC FEATURES •High Conversion Gain, Gc = -11 dB Typ. •High Linearity •Broad RF Frequency Band ; 20 - 30 GHz •SMT Laminate Package (YE Package) •Impedance Matched Zin/Zout = 50 DESCRIPTION The FMM5116YE is a double, single balanced diode mixer upconverter MMIC. The device consists of a low noise mixer, LO

FMM5701X

Abstract: EUDYNA eudyna an
Contextual Info: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the

Eudyna Devices

Abstract: fmm106
Contextual Info: FMM1061VJ GaAs MMIC FEATURES • Operation to 6.0 GHz • Input Frequency divide by 4, OUT and OUT • -5V or+5V DC Single Power Supply • External 50 ohm Load Driving Capability • Small 10 pin Hermetic SMT-10 Package (VJ) • Tape and Reel available

Contextual Info: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm Typ. High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC

Contextual Info: FMM5051VF 13.75-14.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: 31.5dBm typ. High Linear Gain: 31.5dB (typ.) Low Input VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF)

Eudyna Devices

Abstract: ml marking FMM1062ML eudyna an
Contextual Info: FMM1062ML GaAs MMIC FEATURES • Low Power Consumption: 60mW Typ. • Operation to 6.0 GHz • Input Frequency divide by 4, OUT and OUT • -3V (or+3V) DC Single Power Supply • External 50 ohm Load Driving Capability • Small 6-pin Plastic Package for SMT applications (ML)

FMM5522GJ

Abstract: EUDYNA ku vsat amplifier 14.5ghz Eudyna Devices power amplifiers mmic case styles
Contextual Info: FMM5522GJ VSAT MMIC FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION

Contextual Info: FMM5118X 20-32GHz Doubler MMIC FEATURES • Integrated Monolithic Doubler • High Harmonic Rejection • Single Supply Voltage • High Reliability DESCRIPTION The FMM5118X is a doubler, consisting of an X2 multiplier followed by a buffer amplifier for applications with an output

Contextual Info: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω

17800

Abstract: FMM5805GJ-1
Contextual Info: FMM5805GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES • High Output Power: P1dB = 31.0dBm Typ. • High Gain: G1dB = 20.0dB(Typ.) • High PAE: ηadd = 27% (Typ.) • Low In/Out VSWR • Broad Band: 17.7 ~ 19.7GHz • Impedance Matched Zin/Zout = 50Ω

Contextual Info: FMM5017VF GaAs MMIC FEATURES • • • • • • High Output Power: 29dBm typ. High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5017VF is a MMIC amplifier designed for VSAT applications

048 J50

Abstract: Eudyna Devices power amplifiers mmic case styles FMM5010VF
Contextual Info: FMM5010VF GaAs MMIC FEATURES • • • • • High Output Power: 21.0dBm typ. High Linear Gain: 25dB (typ.) Low In/Out VSWR Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5010VF is a power amplifier designed for VSAT applications

Eudyna Devices

Abstract: EUDYNA "Frequency Divider" ghz FMM106HG mmic frequency divider by 11 eudyna an
Contextual Info: FMM106HG GaAs MMIC FEATURES • Operation to 6.5 GHz • Divided by 8, OUT and OUT Outputs • External 50 ohm Load Driving Capability • -5V DC or +5V DC Single Power Supply • Metal/Ceramic 14-pin Hermetic Flat Package • Wide Operation Temperature -55°C to +85°C

Contextual Info: FMM5803X 27.5-31.5GHz Power Amplifier MMIC FEATURES • High Output Power: P1dB = 30dBm Typ. • High Gain: G1dB = 14dB (Typ.) • High PAE: ηadd = 20% (Typ.) • Wide Frequency Band: 27.5-31.5 GHz • Impedance Matched Zin/Zout = 50Ω • 0.25µm PHEMT Technology

EMM5135ZB

Abstract: RO4003 1305G eudyna an
Contextual Info: EMM5135ZB Ku-Band Up-Converter MMIC FEATURES ・ Integrated Monolithic Up-Converter（LOAMP,MIXER, RFAMP） ・ Conversion Gain = 8dB typ. ・ LO Leakage Power @RF Port = -16dBm (typ.) ・ Single Supply Voltage Operation ・ QFN 20pin Plastic Mold Package(ZB)

FMM5049

Abstract: S-Band Power Amplifier S-Band high Power Amplifier S-band mmic MMIC POWER AMPLIFIER S-BAND FMM5049VT MMIC s-band amplifier
Contextual Info: FMM5049VT L,S-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=41.0dBm typ. ・High Linear Gain: GL=33.0dB (typ.) ・Broad Band: 1.8~2.3GHz ・Hermetically sealed Package DESCRIPTION The FMM5049VT is a high-gain wide-band three-stage MMIC amplifier

Contextual Info: FMM5007VF GaAs MMIC FEATURES • • • • • • High Output Power: 31.0dBm typ. High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5007VF is a MMIC amplifier designed for VSAT applications

Contextual Info: FMM5052ZE MMIC Power Amplifier FEATURES • Wide Frequency Band: 0.8 to 2.7GHz • Medium Power: P1dB=26dBm Typ. @ f=0.8 - 2.7GHz • High Linear Gain: GL=19dB (Typ.) @ f=0.8 - 2.7GHz • Impedance Matched Zin/Zout = 50Ω • Wide Operating Temperature Range