ESD PROTECT MOSFET Search Results

u79 dc motor drive

Abstract: hall ic u79 u79 hall sensor ic 79xx 79xx voltage regulator circuit diagram RFI filter schematic diagram 12v US79 US79KUA sumitomo eme 1100 schematic diagram motor control dc 12v
Contextual Info: US79 Series CMOS Power Hall IC Features and Benefits ESD Tolerance IC>7,000V ESD Tolerance of Fan >15,000V Built-in Reverse Voltage Protection Built-in RFI Filter Power Efficient CMOS and Power MOSFET Drivers allow 400mA without overheating Built-in Zener Diodes Protect Outputs

Contextual Info: AN10910 Protecting charger interfaces and typical battery charging topologies with external bypass transistors Rev. 2 — 23 June 2011 Application note Document information Info Content Keywords BISS, MOSFET-Schottky, low VCEsat, battery charger, Li-Ion battery

MAX1924

Abstract: MAX1924X MAX1924XEEE MAX1894 MAX1894XEEE MAX1924VEEE specifications dso ic212 12v battery protection from deep discharge
Contextual Info: 19-2278; Rev 0; 4/02 Advanced Li+ Battery-Pack Protectors In case of a fault condition, on-board drivers control external P-channel MOSFETs, which disconnect the cells from the pack external terminals. The external protection MOSFETs are connected in a common-source configuration that does not require external pullup resistors. The

B3P diode

Abstract: diode B4P b1p 100 35v
Contextual Info: 19-2278; Rev 0; 4/02 Advanced Li+ Battery-Pack Protectors In case of a fault condition, on-board drivers control external P-channel MOSFETs, which disconnect the cells from the pack external terminals. The external protection MOSFETs are connected in a common-source configuration that does not require external pullup resistors. The

CG0805MLA-18KE

Abstract: B0609
Contextual Info: NT IA PL M CO S oH *R Features Applications • RoHS compliant* ■ IC supply line protection ■ ESD protection >25 kV ■ MOSFET gate protection ■ Surge protection ■ Control line protection ■ Low capacitance ■ Low frequency I/O line protection ChipGuard CG0805MLA Series - ESD Protector Array

Contextual Info: TPS1100, TPS1100Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS078C – DECEMBER 1993 – REVISED AUGUST 1995 D D D D D D D Low rDS on . . . 0.18 Ω Typ at VGS = – 10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = – 1.5 V Max

mosfet 4800

Abstract: Dual N-Channel MOSFET dual mosfet 3X3 package esd protect mosfet 4800 mosfet n-channel mosfet transistor TSM7900D tdFN PACKAGE thermal resistance
Contextual Info: TSM7900D 20V Dual N-Channel MOSFET w/ESD Protected TDFN 3x3 Pin Definition: 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 5, 6, 7, 8. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) 20 Features ID (A) 32 @ VGS = 4.5V 6.5 40 @ VGS = 2.5V 5.0 Block Diagram ● Advance Trench Process Technology

esd protect mosfet

Abstract: FULLY PROTECTED MOSFET ultra low igss pA mosfet TSM3464CX6
Contextual Info: TSM3464 20V N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 21 @ VGS = 4.5V 8 25 @ VGS = 2.5V 7 33 @ VGS = 1.8V 6 Block Diagram ● Advance Trench Process Technology

Dual N-Channel MOSFET

Abstract: mosfet 4800 4800 mosfet MOSFET TSSOP-8 dual n-channel MOSFET TSSOP-8 4800 N-channel mosfet n-channel mosfet transistor FULLY PROTECTED MOSFET
Contextual Info: Preliminary TSM6970D 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 20 Features ID (A) 21 @ VGS = 4.5V 8 25 @ VGS = 2.5V

FULLY PROTECTED MOSFET

Abstract: MOSFET TSSOP-8 dual n-channel 4800 power mosfet mosfet 4800 TSM6968SD TSM6968SDCA Dual N-Channel MOSFET 4800 mosfet
Contextual Info: TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 20 Features ID (A) 22 @ VGS = 4.5V 6.5 29 @ VGS = 2.5V

SOP8 marking A10

Contextual Info: TSM9426D 20V Dual N-Channel MOSFET w/ESD Protected SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY VDS V RDS(on)(mΩ) 20 Features ID (A) 14 @ VGS = 10V 9.4 16 @ VGS = 4.5V 8 22 @ VGS = 2.5V

BSP75NTA

Abstract: D8154
Contextual Info: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 500m⍀ Maximum nominal load current a 1.1A (VIN = 5V) Minimum nominal load current(c) 0.7A (VIN = 5V) Clamping energy 550mJ

MS-012AA

Abstract: SC2041 SC5205 SR05 SRDA05-4
Contextual Info: SC2041 HotSwitch™ USB Power Distribution Switch With Shutdown POWER MANAGEMENT Description Features u Designed to meet USB specification revisions 1.1 USB power distribution switches are high-side N-channel MOSFET switches with built-in overcurrent protection and low on-state resistance. The SC2041

"USB Controller"

Abstract: SC5205 SR05 SRDA05-4 MS-012AA SC2041
Contextual Info: HotSwitch USB Power Distribution Switch With Shutdown SC2041 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com July 18, 2000 DESCRIPTION USB power distribution switches are high-side N-channel MOSFET switches with built-in overcurrent protection and low on-state resistance. The SC2041

C-MAC MicroTechnology

Abstract: C-MAC
Contextual Info: PRELIMINARY SPECIFICATION CM2002-1900 Product Description High Linearity MOSFET Quad Mixer For PCS & 3G BTS The CM2002-1900 is a high linearity, passive MOSFET Quad Mixer Features for PCS & 3G Base Station Receivers, exhibiting high dynamic • Integrated, Single-ended RF & LO

24V 20A mosfet switch

Abstract: Y90H RL335 Y90L AS60A
Contextual Info: YB1901 2.0A High-Side Power Switch with Flag Description Features The YB1901 is a low operation voltage, single N-channel MOSFET high-side power switch, optimized for low power consumption system. A small internal charge-pump circuitry is built in the YB1901 to drive the internal MOSFET

TSM3460CX6

Abstract: 4300 MOSFET s54 mo TSM3460
Contextual Info: E TAIWAN TSM3460 S E M IC O N D U C T O R 20V N-Channel MOSFET w/ESD Protected pb RoHS CO M PLIANCE PRODUCT SUMMARY Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate V DS (V) 4. Source 20 1 23 Features R osanna) Id ( A ) 22 @ Vos = 4 .5 V 6 40 @ V g* = 2.5V

TOPFET

Abstract: BUK113-50DL buk113
Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as a general purpose switch for automotive systems and other

siemens automotive relay dc 12v

Abstract: Bsp78
Contextual Info: June 2010 Know How Guide IntelliFET - low side self-protected MOSFET Features Benefits • Load dump protection • Designed for harsh operating environments without the need for extra clamps. • Thermal shutdown non-latching auto restart • Self-protecting when in high

H6968CTS

Contextual Info: HI-SINCERITY Spec. No. : MOS200610 Issued Date : 2006.06.01 Revised Date : 2006.06.28 Page No. : 1/4 MICROELECTRONICS CORP. H6968CTS Dual N-Channel Enhancement-Mode MOSFET 20V, 6.5A (Battery Switch, ESD Protected) 8-Lead Plastic TSSOP-8 Package Code: TS

Contextual Info: T A IW A N S E M IC O N D U C T O R s TSM3460 20V N-Channel MOSFET w/ESD Protected b RoHS CO M PLIANCE SOT-26 PRODUCT SUM M ARY Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 654 3. Gate V DS V) 4. Source 20 1 23 Features R o s iW m O ) Id ( A ) 22 @ Vos = 4 .5 V

US79

Abstract: B102 CECC00802 J-STD-020A US79KUA
Contextual Info: CMOS Power Hall IC Features and Benefits Built-in Reverse Voltage Protection Built-in RFI Filter Power Efficient CMOS and Power MOSFET Drivers allow 400mA without overheating Built-in Zener Diodes Protect Outputs Eliminates all Fan Components Eliminate PC Board

NTE2995

Contextual Info: NTE2995 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D RDS on = 0.65Ω Typical D Extremely High dv/dt Capability D Gate Charge Minimized D Gate−to−Source Zener Diode Protected Applications: D High Current, High Speed Switching D Ideal for Off−Line Power Supplies, Adaptor and PFC

ZXMS6001

Abstract: TS16949 ZXMS6001N3 ZXMS6001N3TA
Contextual Info: ZXMS6001N3 60V N-channel self protected enhancement mode INTELLIFETTM MOSFET Summary Continuous drain source voltage VDS = 60V On-state resistance 675mΩ Max nominal load current a 1.1A (VIN = 5V) Min nominal load current (c) 0.7A (VIN = 5V) Clamping Energy