ES MARKING, DIODE Search Results

ZP33A

Abstract: TZP33A zp 33a 1n9638 zp 278 1N52438 TZP10A MTZJ 188 MTZJ 248 1N6233
Contextual Info: Part Marking <Switching Diodes <Rectifier Diodes> <SchoHky Barrier Diodes) 00-4KQ SR) Part No. Part No. Marking Marking ;«tn Marking < Z en er D io d es> Marking DO-34 MSO) RB441Q Marking DO-35<a8D) I; U RB721Q Black = t¿ n > = M M8R DO-340USD] li ,=tftl>=

SAB-C167CR-16FM

Abstract: C166 C167 C167CR-16FM
Contextual Info: Microcomputer Components Technical Support Group Munich HL MC AT 1 Errata Sheet November 28, 1997 / Release 1.1 Device : Stepping Code / Marking : SAB-C167CR-16FM ES-AC, ES1-AC, ES1*-AC This errata sheet describes the functional problems known in this step. Problem

diode sot-89 marking code

Abstract: sot-89 Marking LB marking QE diode marking gg 2a BH SOT-89 Q62702-A77 marking gg sot-89
Contextual Info: • Silicon Switching Diodes SIEMEN S/ SPCL-, ÔS3L.320 OOlbSSÔ fl W Ê Z I P BAW 79 A SEMICONDS 32E D -B AW 79 D r-eS 'U • • • For high-speed switching High breakdown voltage Common cathode Typo Marking Ordering code for versions In bulk Ordering code for

marking K2 diode

Abstract: MARKING 5D DIODE schottky diode marking A7
Contextual Info: DIODE wffife SOT-23/TO-236AB ‘TM PD ’ GENERAL-PURPOSE a n d LOW-LEAKAGE D IO D ES ELECTRICAL CHARACTERISTICS a t T . = 25°C vF Description *rr Max. Max. nA (ns) <PF) 1 ,2 ,3 10 25 4.0 6.0 ANCK VBR Min. Max. Marking (mA) (V) (V) @IF (mA) 1.0 Device Type

ACT46

Abstract: ACT351 C167 instruction set C16x Instruction Set Manual siemens C166 instruction set C166 C167 C167CR-16FM SAB-C167CR-16FM injection
Contextual Info: Microcontroller Components Errata Sheet October 9, 1998 / Release 1.2 Device: Stepping Code / Marking: Package: SAB-C167CR-16FM ES-AC, ES1-AC, ES1*-AC MQFP-144 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence

TRANSISTOR SMD MARKING CODE kd

Contextual Info: BSP 123 Infineon t echnologi es SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •W = a8 -2 0V Type Vbs b f lDS on) Package Marking 0.38 A 6n SOT-223 BSP 123 BSP 123 100 V Type Ordering Code Tape and Reel Information

Marking 3D TO-236AB

Abstract: T3D 87 pro-electron T3D zener ZENER A12 T3D 91 t3d 96 T3D 77
Contextual Info: SPRAGUE/SENICOND 8514019 GROUP TBD SPRAG UE. D • SS13Û5D □003t.3D S E M IC O N D S / IC S 93D 5 03630 T ^ { \ r ^ f O SMALL-OUTLINE D IO D ES Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C vf Device Type Description Marking BAR18 Schottky

yg801c

Contextual Info: 1. SCOPE T h is s p e c if ic a t io n p rovid es the ra tin g s and the t e s t requirement fo r FUJI SILICON DIODE YG801C06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown is shown It is marked to type name or abbreviated type name, p o la r it y and Lot Na

SI 1050 GH

Abstract: GH-1E GU-1C GU-1Z GU-3C MARKING GU ES01 ES01A ES01F ES01Z
Contextual Info: SANKEN ELECTRIC U S A H E Fast Recovery Diodes D I ? 741 ODDDI ET fi | • Io : 0 .3 -1 .2 A IVrm: 100—1500V " 0 I- O I T RH/ES/RS/RH/GU/RU/GH/EU Io A V rm (V) V rsm (V) Type N o \ ^ RH 1Z RH 1 RH 1A RH 1B RH 1C ES01Z ES01 ES01A ES01F ES 1Z ES 1 ES 1A

GH-3S

Contextual Info: SANKEN ELECTRI C U S A HE Fast Recovery Diodes IV r m : 1 0 0 — D I ? 741 ODDDI ET fi | • I o : 0 .3 - 1 5 0 0 V T RH/ES/RS/RH/GU/RU/GH/EU V rsm V V rm (V) Io (A) Type N o \ ^ RH 1Z RH 1 RH 1A RH 1B RH 1C ES01Z ES01 ES01A ES01F ES 1Z ES 1 ES 1A ES 1F

ru 52 8 pin

Abstract: diodes ru 4c fmqg5g
Contextual Info: Fast Recovery Rectifier Diodes 4-2 4-2-1 Part No. 1 Chip VRM IF IFSM trrq trrw V (A) (A) (µS) (µS) Package Fig. No. Part No. EU 2YX 1.2 25 0.2 0.08 Axial(E1) 3 RS 1A RU 2YX 1.5 30 0.2 0.08 Axial(R1) 4 AU02A RU 3YX 2.0 50 0.2 0.08 Axial(R2) 5 EU02A 70 0.4

EMI Filter and ESD Protection for Secure Digital Card Interfaces

Abstract: ECLAMP2357N
Contextual Info: EClamp2357N EMI Filter and ESD Protection for Secure Digital Card Interfaces PRELIMINARY PROTECTION PRODUCTS - EMIClampTM Description Features TM The EClamp 2357N is a low pass filter array with integrated TVS diodes. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic

Contextual Info: Not Recommended for New Design A Product Line of Diodes Incorporated Use DMP10H400SK3 ZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C

FMLG12

Abstract: rb60 RECTIFIER RB40 EU2A SANKEN EU2 RH2F CTB34 sanken s-100 78/rb60 RECTIFIER
Contextual Info: 7^0741 3SE » SA NK EN E L E C T R I C CO LTD QOOGflOS ü E S A K J 7 2 0 3 -OI eVrm: 100~ 1500V E lo:0.5~ l . 2A Fast Recovery Diodes RH/ES/RS/RH/RU/EU io A V rm (V) Ti CC) 5 0 H z H a lf S in e W ave S in g l e P uts T yp e N o \ 250 RH 1 450 400 RH 1A

entrelec diode

Abstract: Diode BFM diode 4007 DATASHEET din 4007 in 4007 diode 1SNA010134R1700 1SNA020021R1300 diode N 4007 diode 4007 diode in 4007
Contextual Info: Diode logic modules Di od M eL od og ule ic s 15 Index Logical signal conditioners . 15.1 - 15.8 Series 10 000. 15.2

MUR7040

Abstract: MUR7005 MUR7010 MUR7020 MUR7060
Contextual Info: DACO SEMICONDUCTOR CO., LTD. MUR7005 R THRU MUR7060(R) SUPER FAST RECOVERY DIODES STUD TYPE 70A Features 70Amp Rectifier 50-60 Volts High Surge Capability Types Up to 600V V RRM DO-5 Maximum Ratings B Operating Temperature: -65 C to +175 Storage Temperature: -65 C to +175

MUR5040

Abstract: MUR5040R MUR5005 MUR5010 MUR5020 MUR5060
Contextual Info: DACO SEMICONDUCTOR CO., LTD. MUR5005 R THRU MUR5060(R) SUPER FAST RECOVERY DIODES STUD TYPE 50A Features High Surge Capability Types Up to 600V V 50Amp Rectifier 50-100 Volts RRM DO-5 Maximum Ratings B Operating Temperature: -65 C to +175 Storage Temperature: -65 C to +175

mc 4011

Abstract: working of 4011 IC 220L3 cd 4011 be ic 4016 military part marking symbols jan 1n251 mc 4016 B ic
Contextual Info: NIL SPECS IC|0DDD125 0002204 T | MIL-S-19500/188A AMENDMENT 1 20 September 1979 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE JAN-1N251 This amendment forms a part o f M ilita r y S p e c ific a tio n MIL-S-19500/188A, dated 9 October 1963, and i s approved fo r use by a ll Departments and

Contextual Info: Property http://semicon.sanyo. com/en/search/property.php?clcd=149&prod=DBA250G SANYO Semiconductor Co., Ltd. S A \Y O Rectifying Diodes—Single-Phase Bridge Rectifying Diodes □ sp lay a list Discret e Devices Prod uct Information Type No. DBA250G Category

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZSxxxG Series Silicon planar type M Di ain sc te on na tin nc ue e/ d For constant voltage, constant current, waveform clipper and surge absorption circuit • Package ■ Features

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Zener Diodes MAZ8xxxG Series Silicon planar type For stabilization of power supply • Package  Extremely low noise voltage caused from the diode (2.4 V to 39V, 1/3 to 1/10 of our conventional MAZ3xxx series)

MAZS2000L

Abstract: MAZS200
Contextual Info: Zener Diodes MAZSxxx Series Silicon planar type Unit: mm For constant voltage, constant current, waveform clipper and surge absorption circuit 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 Total power dissipation * Ptot Junction temperature Tj Storage temperature

Contextual Info: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 3 — 14 November 2014 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZDxxx Series Silicon planar type For constant voltage, constant current, waveform clipper and surge absorption circuit • Package  Low noise type  Code SSSMini2-F2  Pin Name