ERC20 Search Results

ERC20

Contextual Info: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ

Contextual Info: ERC20M04 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current5.0 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time400n @I(F) (A) (Test Condition)100m @I(R) (A) (Test Condition)100m V(FM) Max.(V) Forward Voltage1.3

Contextual Info: ERC20M02 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current5.0 V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time400n @I(F) (A) (Test Condition)100m @I(R) (A) (Test Condition)100m V(FM) Max.(V) Forward Voltage1.3

power Diode 800V 5A

Abstract: diode 5A 800V
Contextual Info: ERC20M 5A ( 200V to 800V / 5A ) Outline drawings, mm FAST RECOVERY DIODE 4.5MAX. Ø3.2+0.2 -0.1 10.5MAX. 2.0 17.0±0.3 4.7 6.0 3 3.7 1 13.0MAX. 1.2 0.8 5.08 Features Insulated package fully molding High voltage by mesa design 2.7 0.4 JEDEC EIAJ High reliability

ERC20

Contextual Info: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ

power Diode 800V 5A

Contextual Info: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ

ERC20M

Contextual Info: ERC20M 5A ( 200V to 800V / 5A ) Outline drawings, mm FAST RECOVERY DIODE 4.5MAX. Ø3.2+0.2 -0.1 10.5MAX. 2.0 17.0±0.3 4.7 6.0 3 3.7 1 13.0MAX. 1.2 0.8 5.08 Features Insulated package fully molding High voltage by mesa design 2.7 0.4 JEDEC EIAJ High reliability

d400 e

Abstract: power Diode 800V 5A
Contextual Info: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ

Contextual Info: ERC20M 5A t a n t u m — K FAST RECOVERY DIODE Features Insulated package by fully m o ld in g . High voltage by mesa design. • ¡ftifs fitt Connection Diagram High reliability : Applications High speed switching. M axim um Ratings and Characteristics

ERC20-08

Abstract: ERC20M erc20
Contextual Info: ERC20MI5A FAST RECOVERY DIODE Features In su la te d p a ckag e by fu lly m o ld in g . H ig h vo lta g e by m esa d e s ig n . Connection Diagram H ig h re lia b ility • ffliis : Applications H ig h speed s w itc h in g . Maximum Ratings and Characteristics

Contextual Info: ERC20-02-ERC20-08 Fast Recovery Rectifiers VOLTAGE RANGE: 200 - 800 V CURRENT: 5.0 A TO-220AC 2.8± 0.1 Features Low cos t 4.5± 0.2 10.2± 0.2 1.4± 0.2 φ 3.8± 0.15 Diffus ed junction 19.0± 0.5 Low forward voltage drop High current capability Eas ily cleaned with Freon Alcohol,Is opropanol and

power Diode 800V 5A

Abstract: ERC20M
Contextual Info: ERC20M 5A ( 200V to 800V / 5A ) Outline drawings, mm FAST RECOVERY DIODE 4.5MAX. Ø3.2+0.2 -0.1 10.5MAX. 2.0 17.0±0.3 4.7 6.0 3 3.7 1 13.0MAX. 1.2 0.8 5.08 Features Insulated package fully molding High voltage by mesa design 2.7 0.4 JEDEC EIAJ High reliability

Contextual Info: ERC20M08 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current5.0 V(RRM)(V) Rep.Pk.Rev. Voltage800 t(rr) Max.(s) Rev.Rec. Time400n @I(F) (A) (Test Condition)100m @I(R) (A) (Test Condition)100m V(FM) Max.(V) Forward Voltage1.5

Contextual Info: ERC20M06 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current5.0 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time400n @I(F) (A) (Test Condition)100m @I(R) (A) (Test Condition)100m V(FM) Max.(V) Forward Voltage1.5

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

erc24-06

Abstract: ERA21-06 ERC30-02 ERB29-04 ERC48 ERD07-15 ERC24 ERC35-02 ERC38-06 ERD32-01
Contextual Info: COLLMER SEMICONDUCTOR INC 5SE D • HHañTTS Ü0Ü13S3 T ■ very “Quick Reference” Selection Guide 50-100 VOLT Part Number ERA32-01 ERB32-01 ERC30-01 ERD32-01 - 0 3 -O I 200VOLT trr/ns Pkg. Part Number lo A trr/ns Pkg. lo(A) trr/ns Pkg. 1.0 15 1.5 3.0

Contextual Info: E R C 2 5 A FAST RECOVERY DIODE • 4 # ^ : Features High voltage by mesa design. • A f f f llt e High reliability C onnection Diagram : A pplications High speed switching. M axim um Ratings and C haracteristics : Absolute Maximum Ratings Items Repetitive Peak Reverse Voltage

ERC24-06

Abstract: ERA21-06 ERA18 era-84 ERA15-04 ESAD75-02 ERC24-04
Contextual Info: V -V F U J I M IN I AXIAI. DIODI? S E R IE S T PLAN General purpose D iode T Y P lì -~ FRD FRD SOD Low loss FRD FRD FRD ZENER n FRA15-01 ERA15-02 ERA15-04 MM 15-06 ERA15-08 ERA15-10 BRA-18-02 ERA48-04 100 V 200 200 400 EIÏA22-02 ERA22-04 ERA22-0G ERA22-08

ERD29-08

Abstract: esc023 ERA22-02 ERA22-04 ERA22-06 ERA22-08 ERA22-10 ERA34-10 ERD37-08 ERB43-02
Contextual Info: 整流ダイオード / Rectifier Diodes • 高速整流ダイオード Fast Recovery Diodes（FRD） シングル リードタイプ 1 in one-package, lead type 形 式 Device type SMD 絶対最大定格 対応品 Maximum rating VRRM IF AV ＊1 Volts Amps.

TC106A

Contextual Info: Fast Recovery Diodes Single package Ratings and characteristics Maximum rating Type Vrrm Volts Amps. °C Max. Volts VS -40 to +150 0.95 If=5A 0.1 0.035 *4 10.0 0.6 Fig. 1 -40 t o +150 0.95 (If=5A) 0.1 0.035 *4 3.0 2.0 Fig. 3 200 5 (Tc=134°C) 50 -40 to +150

ERC20

Abstract: ERC20-02 erc20 08 diode 08MFT
Contextual Info: E R C 2 5 A FAST RECOVERY DIODE • 4 # ^ : Features High voltage by mesa design. • A fffllte High reliability Connection Diagram : Applications High speed switching. M axim um Ratings and Characteristics : Absolute Maximum Ratings Items Symbols Conditions

ERG81-004

Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Contextual Info: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

ERC20M-06

Abstract: YG911S2 ERC20M-04 ERD74-02 ERD74-04 ERC20-02 ERC20-04 ERC20-06 ERC20-08 ERC20M-02
Contextual Info: Fast Recovery Diodes Single package Ratings and characteristics Mass Dim ensions G ram s Fig. No. Fig. 1 Fig. 3 °C KS926S2 200 5 Tc=106°C 70 -40 to +150 0.95 (I f=5A) 0.1 0.035 * 4 10.0 0.6 ERC90-02 200 5 (Tc=125°C) 50 -40 t o +150 0.95 (I f=5A) 0.1 0.035 * 4