EQUIVALENT TRANSISTOR CMS Search Results

R2632

Abstract: I-ETS-300-220 S M R2632 transistor substitution chart saw resonator r2632 R2632 resonator 433.92 Mhz two-port saw resonator RF pcb antenna 434 HiSeC saw Colpitts circuit design
Contextual Info: Fairchild Application Note 1021 March 1997 INTRODUCTION In the recent years short range unlicensed RF links have become very popular for a wide variety of applications in the field of remote control, data exchange, keyless entry systems, and others. The most popular frequency in Europe for

Widlar

Abstract: AN009301-11 AN-446B 800W TRANSISTOR npn 446B LM12 150w darlington transistor to3 package 600W TRANSISTOR AUDIO AMPLIFIER
Contextual Info: Robert J. Widlar Apartado Postal 541 steady-state conditions increases guaranteed power ratings by several times when compared to older techniques. At the same time, it dramatically lowers the peak junction temperature with worst-case fault conditions. Still

2N2222 die

Abstract: light activated switch 2N2222 application note emitter follower AN-110 LM105 LM195 2N2222 NPN Transistor features 12v bulb national 2n2222 equivalent component of transistor 2N2222
Contextual Info: INTRODUCTION Overload protection is perhaps most necessary in power circuitry. This is shown by recent trends in power transistor technology. Safe-area, voltage and current handling capability have been increased to limits far in excess of package power dissipation. In RF transistors, devices are now available and able to withstand badly mismatched loads without

S78DM12Q

Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
Contextual Info: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power

CMSD4448

Abstract: Coiltronics CTX03 2n2907 SOT23 91A SOT23 SOT23 npn 91A EMK325BJ106MN IRF620S LMK432BJ226MM MAX5003 MAX5003EVKIT
Contextual Info: 19-1914; Rev 1; 1/01 MAX5003 Evaluation Kit Features ♦ 5V at 1A Output The MAX5003 EV kit is a fully assembled and tested surface-mount printed circuit PC board. It comes with the output voltage set to 5V. This EV kit is configured as a flyback converter, and can easily be configured for

pin diagram for IC cd 1619 fm receiver

Abstract: ml 1136 triac Transistor 337 DIODE 2216 yagi-uda Antenna bistable multivibrator using ic 555 NEC plasma tv schematic diagram Digital Panel Meter PM 428 555 solar wind hybrid charge controller CLOVER-2000
Contextual Info: Index Editor’s Note: Except for commonly used phrases and abbreviations, topics are indexed by their noun names. Many topics are also cross-indexed. The letters “ff” after a page number indicate coverage of the indexed topic on succeeding pages. A separate Projects index follows the main index.

Coiltronics CTX03

Abstract: CMSD4448 CTX03 LVL MAXIM Motorola MBRS130L capacitor .1m 100v npn high voltage transistor 500v sot23 isolated feedback flyback converter n1 sot23 optocoupler pnp
Contextual Info: 19-1591; Rev 0; 11/99 MAX5003 Evaluation Kit Features ♦ 5V at 1A Output The MAX5003 EV kit is a fully assembled and tested surface-mount printed circuit PC board. It comes with the output voltage set to 5V. This EV kit is configured as a flyback converter, and can easily be configured for

diode SD3

Abstract: NEC-TOKIN America
Contextual Info: MF1531-03 Power Supply IC S1F81100F0R/S1F81100F5R Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

BP 109 transistor

Abstract: transistor BP 109 CHK015A-SMA CHK015A HEMT Amplifier transistor GaN transistor 04 N 70 BP Gan transistor CHK-01
Contextual Info: Advance Information: AI1010 15W Power Packaged Transistor GaN HEMT on SiC UMS’s CHK015A is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers a general purpose and broadband solution for a variety of RF power applications.

PE-64287

Abstract: 1N5819 AB-30 LM1578A
Contextual Info: INTRODUCTION A large segment of today’s systems comply with the Electronic Industries Association EIA RS-232 specification for the interface between data processing and data communications equipment. Because this specification calls for the use of positive and negative signal levels, the designer quite often needs to add a dual supply to a board which can otherwise operate from a single 5V supply. The LM1578A Switching Regulator can be used to convert the already existing

CHK040A-SOA

Abstract: CHK-04
Contextual Info: Advance Information: AI1011 40W Power Packaged Transistor GaN HEMT on SiC UMS’s CHK040A is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers a general purpose and broadband solution for a variety of RF power applications.

BRIDGE-RECTIFIER 10v ,1A

Abstract: BRIDGE-RECTIFIER 1A 800w power amplifier circuit diagram BRIDGE-RECTIFIER 800w audio amplifier circuit diagram APPLICATION OF BRIDGE-RECTIFIER IC 8112-AG7 K04A LM12 800w audio Amplifier
Contextual Info: General Description The LM12 is a power op amp capable of driving ± 25V at ± 10A while operating from ± 30V supplies. The monolithic IC can deliver 80W of sine wave power into a 4Ω load with 0.01% distortion. Power bandwidth is 60 kHz. Further, a peak dissipation capability of 800W allows it to handle reactive loads such as transducers, actuators or small motors

MOSFET Application Hints

Abstract: AVALANCHE TRANSISTOR Mosfet application
Contextual Info: The Ruggedness of Paralleled Power MOSFETs Abstract The behavior of power MOSFETs under avalanche conditions has been described in a number of papers. However, only single devices were examined. This paper investigates the avalanche action of power MOSFETs connected in parallel. A disadvantage of this

Contextual Info: • DESCRIPTION The FUJITSU MB3782 is a PWM-type switching regulator controller, designed with open-collector output for connection to external drive transistors and coils, providing a selection of three types of output voltage: stepup, step-down or inverting inverting output is available on one circuit only .

Contextual Info: CHK015A-SMA 15W Power Packaged Transistor GaN HEMT on SiC Description The CHK015A-SMA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and

5 pin voltage comparator IC

Abstract: FPT-16P-M05 MB3789 MB3789PFV
Contextual Info: ASSP For Power Supply Applications BIPOLAR Switching Regulator Controller Supporting External Synchronization MB3789 • DESCRIPTION The MB3789 is a PWM (pulse width modulation) switching regulator controller supporting an external sync signal. The MB3789 incorporates two error amplifiers which can be used respectively for voltage control and current

Contextual Info: CHK080A-SRA 80W Power Packaged Transistor GaN HEMT on SiC Description The CHK080A-SRA is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and

CMSH3-40

Contextual Info: LT3507A Triple Monolithic Step-Down Regulator with LDO DESCRIPTION FEATURES n n n n n n n n n Wide Input Range: 4V to 36V One 2.7A and Two 1.8A Output Switching Regulators with Internal Power Switches Low Dropout Linear Regulator with External Transistor Antiphase Switching Reduces Ripple

LT3507AFE

Abstract: LDO regulator 51A CMSH3-40 smb340 13507a SMB34 LT3507 LT3507AIUHF LT3507AEFE Signal Souces Switch
Contextual Info: FEATURES Wide Input Range: 4V to 36V n One 2.7A and Two 1.8A Output Switching Regulators with Internal Power Switches n Low Dropout Linear Regulator with External Transistor n Antiphase Switching Reduces Ripple n Independent Run, Tracking/Soft-Start, and Power

ba9u

Abstract: JM34R8
Contextual Info: 2 D I7 5 M -1 2 0 7 6 'in — 9 ^ a > 3- - >i : Outline l£f Drawings POWER TRANSISTOR MODULE : Features • • • • 3511(81^4*'' ^' High Arm Short Circuit Capability hFE*x'S '- ' High DC Current Gain 7 U —jfc'f U V W - i =t —K l*JM Including Free Wheeling Diode

Contextual Info: CHK040A-SOA 40W Power Packaged Transistor GaN HEMT on SiC Description The CHK040A-SOA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and

Contextual Info: CHK025A-SOA 25W Power Packaged Transistor GaN HEMT on SiC Description The CHK025A-SOA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and

Radar Antenna

Abstract: working principle of ac servo motor lm12 op amp AN-446 LM12 fast op LM318 radar position control servo motor
Contextual Info: Robert J. Widlar Apartado Postal 541 Puerto Vallarta, Jalisco, Mexico sistor array. The turn-on characteristics are controlled by keeping the output open-circuited until the total supply voltage reaches 15V. The output is also opened should the case temperature exceed 150˚C or as the supply voltage approaches the BVCEOof the output transistors. The IC withstands overvoltages to 100V.

Contextual Info: Micropower 5 Volt Regulator D escription The CS-8101 is a precision 5V m icropower voltage regulator w ith very low quiescent current 70pA typical at IOOjiA load . The 5V out­ p u t is accurate w ithin ±2% and sup­ plies 100mA of load current w ith a typical dropout voltage of only