EQUIVALENT TRANSISTOR AN 243 Search Results

vhf linear amplifier mrf245

Abstract: amplifier mrf245 mrf247 OMRON lzn2 MRF240 2N6084 equivalent MRF245 DATA SPEC NF2-12 LZN2-UA-DC12 mrf245
Contextual Info: Order this document by AN791/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN791 A SIMPLIFIED APPROACH TO VHF POWER AMPLIFIER DESIGN Prepared by: Helge O. Granberg RF Circuits Engineering This note discusses the design of 35-W and 75-W VHF linear amplifiers. The construction technique

ED26 diode

Abstract: mos Turn-off Thyristor MOS Controlled Thyristor AN8602 ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
Contextual Info: Harris Semiconductor No. AN8602.1 Harris Power MOSFETs May 1992 The IGBTs - A New High Conductance MOS-Gated Device Author: J.P. Russell, A.M. Goodman, L.A. Goodman and J.M. Neilson Abstract ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to

equivalent transistor rf "30 mhz"

Abstract: MRF392 NPN TRANSISTOR Z4 lx125 motorola rf Power Transistor mrf392 motorola
Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

SCHEMATIC WITH IGBTS

Abstract: AN8603 thyristor rca MOS-Gated Thyristor Abstract schematic power transistor
Contextual Info: Harris Semiconductor No. AN8603.2 Harris Power MOSFETs December 1993 Improved IGBTs with Fast Switching Speed And High-Current Capability Authors: A.M. Goodman, J.R. Russell, L.A. Goodman, C.J. Nuese and J.M. Neilson Abstract Conventional vertical power MOSFETs are limited at high

MOS Controlled Thyristor

Abstract: GTO thyristor 5A, 400V ED-26 diode Pelly AN75 AN-7504 MOS-Gated Transistors MOS-Gated Thyristor ED26 diode
Contextual Info: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract /Title AN75 4 Subect The GBTs A ew i h onucance OSated evice Autho ) Keyords Fairhild orpoation, emionuctor, Cretor () DOCI FO dfark Page- May 1992 AN-7504 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to

applications of mos controlled thyristor

Abstract: MOS Controlled Thyristor Semiconductor Power AN-7504 mosfet controlled thyristor mos Turn-off Thyristor P channel 600v 20a IGBT ED26 diode Pelly 10A fast Gate Turn-off Thyristor transistor Ia 15 rca
Contextual Info: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract Title N86 bt he BTs w gh ncce OSted vice utho eyrds terrpoon, minctor, er OCI O frk geode May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to

AN-7505

Abstract: fairchild low power transistor 1977
Contextual Info: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN-7505 Abstract Title N86 bt mpro d BTs h t itch eed d ghrt paty utho eyrds terrpoon, minctor, er ) OCI O frk Conventional vertical power MOSFETs are limited at high

Power Semiconductor Applications Philips Semiconductors

Abstract: "Power Semiconductor Applications" Philips philips schematic induction cookers stepper motor philips ID 27 connections wire diode S4 68a hef4752v application note HEF4752 single phase ac motor speed control HEF4752V hef4752v Three-Phase Inverters philips igbt induction cooker
Contextual Info: Motor Control Power Semiconductor Applications Philips Semiconductors CHAPTER 3 Motor Control 3.1 AC Motor Control 3.2 DC Motor Control 3.3 Stepper Motor Control 241 Motor Control Power Semiconductor Applications Philips Semiconductors AC Motor Control 243

AN-7505

Abstract: AN75 circuit diagram of thyristor controlled rectifier SCHEMATIC WITH IGBTS MOS-Gated Thyristor semiconductor power devices
Contextual Info: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN-7505 Abstract /Title AN75 5 Subect Impro ed GBTs ith ast witch ng peed nd ighurent apaility) Autho ) Keyords Interil orpoation, emionuctor, Cretor () DOCI

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

15J 6KV

Abstract: speed control of induction motor by using scr "The Magic of I2t" SCR C106D equivalent circuit slip ring motor characteristics curve VARISTOR 275 LA 20A 5 hp DC motor speed control using scr transformer with 20kVA rating 20kVA transformer scr C106D
Contextual Info: APPLICATION NOTES Littelfuse Varistor Design Examples APPLICATIONS: 3000 1500 It is desired to prevent failure of the power supply shown in Figure 1b to be used on residential 117VAC lines. A representative transient generator is to be used for testing as shown in Figure 1a.

UF2840G

Abstract: transistor C 245 b
Contextual Info: P i com pany RF MOSFET Power Transistor, 40W, 28V 100-500 MHZ UF2840G - A - B » Features f— H— j • N -Channel E n h an cem en t M ode D evice I I • DM OS Structure • Low er C ap acitan ces for B roadb an d O p eratio n

welding transformer SCR

Abstract: SCR C106D equivalent circuit scr tic 106 200mh inductor slip ring motor characteristics curve 5 hp DC motor speed control using scr scr C106 Fuse class CC 400V crowbar SCR C106D terminal and characteristic scr tic 106 ac
Contextual Info: Littelfuse Varistor Design Examples Application Note [ /Title AN97 72 /Subject (Harris Varistor Design Examples) /Autho r () /Keywords (TVS, Transient Suppression, Protection, ESD, IEC, EMC, Electromagne tic Compatibility, Harris Sup- This note is meant to be a guide for the user in selecting a

C04-013

Abstract: 74ls10 IC CMOS 4000B series rca 74 HC Series ICs C04013
Contextual Info: Application Notes Power Consumption in QMOS Logic Circuits by R. Funk and B. Heinze QMOS, RCA’s high-speed CMOS-logic technology, offers users the best features of both CMOS and TTL tech nolog ies: the low-power consumption of CMOS and the fast speeds associated with LSTTL. This Application Note focuses on

AN569 in Motorola Power Applications

Abstract: motorola mosfet BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS MTP15N06V equivalent dpak DIODE ANODE COMMON motorola ir 722c motorola Power Applications Manual mtv32 DV240 AN1083
Contextual Info: Thermal Compendium Table of Contents Abstracts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Basic Semiconductor Thermal Measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

1000w inverter PURE SINE WAVE schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW
Contextual Info: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design

Contextual Info: Aflkm*A w an A M P com pany RF MOSFET Power Transistor, 5W, 28V 100 - 500 MHz UF2805B V2.00 Features • N-Channel Enh ancem en t Mode Device • DMOS Structure • Lower Capacitances for Broadband O peration • C om m on Source Configuration • Lower Noise Floor

"Schottky Diode"

Abstract: 18ph diode
Contextual Info: ApHI 1997 Micro Linear ML4851 Low Current, Voltage Boost Regulator GENERAL DESCRIPTION FEATURES The ML4851 is a low power boost regulator designed for DC to DC conversion in 1 to 3 cell battery powered systems. The maximum switching frequency can exceed 100kHz, allowing the use of small, low cost inductors.

Contextual Info: m m an A M P com pany RF M O SFET Power Transistor, 10W, 28V 2 -175 MHz DU2810S Features • • • • • N-Channel E nhancem ent M ode Device DMOS Structure I.ower Capacitances for Broadband O peration C om m on Source Configuration Low N oise Floor Absolute Maximum Ratings at 25°C

Contextual Info: December 1994 PRELIMINARY flfc. M icro Linear ^ ML4875 Low Voltage Boost Regulator with Shutdown GENERAL DESCRIPTION FEATURES The ML4875 is a boost regulator designed for DC to DC conversion in 1 to 3 cell battery powered systems. The combination of BiCMOS process technology, internal

IC 741 cn

Contextual Info: July 1996 Micro Linear ML4875 Low Voltage Boost Regulator with Shutdown GENERAL DESCRIPTION FEATURES The ML4875 is a boost regulator designed for DC to DC conversion in 1 to 3 cell battery powered systems. The combination of BiCMOS process technology, internal

Power Semiconductor Applications Philips Semiconductors

Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471
Contextual Info: Thermal Management Power Semiconductor Applications Philips Semiconductors CHAPTER 7 Thermal Management 7.1 Thermal Considerations 553 Thermal Management Power Semiconductor Applications Philips Semiconductors Thermal Considerations 555 Thermal Management

Snubber circuit Design

Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
Contextual Info: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac­ teristics are closely related each other and cannot be considered independently are further, very

Contextual Info: IN T R O D U C T IO N T O C E R A M IC FILTERS m xtfta ta For more than two decades, ceramic filter technology has been instrumental in the proliferation of solid state electronics. A view of the future reveals that even greater expectations will be placed on piezoelectric material in the