EQUIVALENT TRANSISTOR AN 243 Search Results

vhf linear amplifier mrf245

Abstract: amplifier mrf245 mrf247 OMRON lzn2 MRF240 2N6084 equivalent MRF245 DATA SPEC NF2-12 LZN2-UA-DC12 mrf245
Contextual Info: Order this document by AN791/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN791 A SIMPLIFIED APPROACH TO VHF POWER AMPLIFIER DESIGN Prepared by: Helge O. Granberg RF Circuits Engineering This note discusses the design of 35-W and 75-W VHF linear amplifiers. The construction technique

ED26 diode

Abstract: mos Turn-off Thyristor MOS Controlled Thyristor AN8602 ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
Contextual Info: Harris Semiconductor No. AN8602.1 Harris Power MOSFETs May 1992 The IGBTs - A New High Conductance MOS-Gated Device Author: J.P. Russell, A.M. Goodman, L.A. Goodman and J.M. Neilson Abstract ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to

SCHEMATIC WITH IGBTS

Abstract: AN8603 thyristor rca MOS-Gated Thyristor Abstract schematic power transistor
Contextual Info: Harris Semiconductor No. AN8603.2 Harris Power MOSFETs December 1993 Improved IGBTs with Fast Switching Speed And High-Current Capability Authors: A.M. Goodman, J.R. Russell, L.A. Goodman, C.J. Nuese and J.M. Neilson Abstract Conventional vertical power MOSFETs are limited at high

applications of mos controlled thyristor

Abstract: MOS Controlled Thyristor Semiconductor Power AN-7504 mosfet controlled thyristor mos Turn-off Thyristor P channel 600v 20a IGBT ED26 diode Pelly 10A fast Gate Turn-off Thyristor transistor Ia 15 rca
Contextual Info: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract Title N86 bt he BTs w gh ncce OSted vice utho eyrds terrpoon, minctor, er OCI O frk geode May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to

AN-7505

Abstract: fairchild low power transistor 1977
Contextual Info: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN-7505 Abstract Title N86 bt mpro d BTs h t itch eed d ghrt paty utho eyrds terrpoon, minctor, er ) OCI O frk Conventional vertical power MOSFETs are limited at high

Power Semiconductor Applications Philips Semiconductors

Abstract: "Power Semiconductor Applications" Philips philips schematic induction cookers stepper motor philips ID 27 connections wire diode S4 68a hef4752v application note HEF4752 single phase ac motor speed control HEF4752V hef4752v Three-Phase Inverters philips igbt induction cooker
Contextual Info: Motor Control Power Semiconductor Applications Philips Semiconductors CHAPTER 3 Motor Control 3.1 AC Motor Control 3.2 DC Motor Control 3.3 Stepper Motor Control 241 Motor Control Power Semiconductor Applications Philips Semiconductors AC Motor Control 243

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

1000w inverter PURE SINE WAVE schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW
Contextual Info: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design

Contextual Info: Aflkm*A w an A M P com pany RF MOSFET Power Transistor, 5W, 28V 100 - 500 MHz UF2805B V2.00 Features • N-Channel Enh ancem en t Mode Device • DMOS Structure • Lower Capacitances for Broadband O peration • C om m on Source Configuration • Lower Noise Floor

Contextual Info: December 1994 PRELIMINARY flfc. M icro Linear ^ ML4875 Low Voltage Boost Regulator with Shutdown GENERAL DESCRIPTION FEATURES The ML4875 is a boost regulator designed for DC to DC conversion in 1 to 3 cell battery powered systems. The combination of BiCMOS process technology, internal

IC 741 cn

Contextual Info: July 1996 Micro Linear ML4875 Low Voltage Boost Regulator with Shutdown GENERAL DESCRIPTION FEATURES The ML4875 is a boost regulator designed for DC to DC conversion in 1 to 3 cell battery powered systems. The combination of BiCMOS process technology, internal

Power Semiconductor Applications Philips Semiconductors

Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471
Contextual Info: Thermal Management Power Semiconductor Applications Philips Semiconductors CHAPTER 7 Thermal Management 7.1 Thermal Considerations 553 Thermal Management Power Semiconductor Applications Philips Semiconductors Thermal Considerations 555 Thermal Management

Snubber circuit Design

Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
Contextual Info: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac­ teristics are closely related each other and cannot be considered independently are further, very

Contextual Info: IN T R O D U C T IO N T O C E R A M IC FILTERS m xtfta ta For more than two decades, ceramic filter technology has been instrumental in the proliferation of solid state electronics. A view of the future reveals that even greater expectations will be placed on piezoelectric material in the

ML4851-5

Contextual Info: ING e e Rang TUl R A peratur m e E T F ia c r e m ed Com °C to 70°C ent –20 Equipm ndheld a H le tab for Por Extend April 1997 ML4851 Low Current, Voltage Boost Regulator GENERAL DESCRIPTION FEATURES The ML4851 is a low power boost regulator designed for

CD75

Abstract: ML4875 ML4875CS-3 ML4875CS-T DS4875
Contextual Info: July 2000 ML4875* Low Voltage Boost Regulator with Shutdown GENERAL DESCRIPTION FEATURES The ML4875 is a boost regulator designed for DC to DC conversion in 1 to 3 cell battery powered systems. The combination of BiCMOS process technology, internal synchronous rectification, variable frequency operation,

Contextual Info: July 2000 ML4875 Low Voltage Boost Regulator with Shutdown GENERAL DESCRIPTION FEATURES The ML4875 is a boost regulator designed for DC to DC conversion in 1 to 3 cell battery powered systems. The combination of BiCMOS process technology, internal synchronous rectification, variable frequency operation,

ML4875

Contextual Info: July 1996 ML4875 Low Voltage Boost Regulator with Shutdown GENERAL DESCRIPTION FEATURES The ML4875 is a boost regulator designed for DC to DC conversion in 1 to 3 cell battery powered systems. The combination of BiCMOS process technology, internal synchronous rectification, variable frequency operation,

CQM1H-CPU51 DIP SWITCH setting omron

Abstract: CQM1H-CPU21 CQM1-PA216 CQM1-PA203 CQM1-ID212 CQM1-OD212 Omron CQM1H-CPU21 CQM1H-CPU51 DIP SWITCH configuration CQM1-OC222 CQM1-PA206
Contextual Info: Programmable Controller CQM1H The CQM1H’s rack-less modular design lets you customize your control system by adding “inner boards” for advanced functions, as well as specialized I/O and communications modules. CQM1H offers the most flexibility of all PLC systems in its class.

in9148

Abstract: MOC301 proximity sensor interfacing with 8051 MOC3021 APPLICATION CIRCUITS K1953 coto 8051 ADT14 ADT14GS N-16 OP295
Contextual Info: a Quad Setpoint, Programmable Temperature Monitor and Controller ADT14 FEATURES Four Programmable Temperature Setpoints Programmable Thermal Hysteresis Accuracy ؎3؇C Typ from –40؇C to +125؇C Temperature Output Scale Factor = 5 mV/K Resistor Programmable Temperature Setpoints

op2976

Abstract: A7812 AD202 4-20ma SSM-2143 c3067 coto 8051 op177 ADT14 ADT14GP N-16
Contextual Info: a Quad Setpoint, Programmable Temperature Monitor and Controller ADT14 FEATURES Four Programmable Temperature Setpoints Programmable Thermal Hysteresis Accuracy ؎3؇C Typ from –40؇C to +125؇C Temperature Output Scale Factor = 5 mV/K Resistor Programmable Temperature Setpoints

Contextual Info: October 1996 PRELIMINARY MÉLMicro Linear ML4851 Low Current, Voltage Boost Regulator GENERAL DESCRIPTION FEATURES The ML4851 is a low power boost regulator designed for DC to DC conversion in 1 to 3 cell battery powered systems. The maximum switching frequency can exceed

cost of Inductor

Abstract: CD75 ML4851 ML4851-3 ML4851CS-3 ML4851CS-5 ML4851ES-3 ML4861 fairchild 923 fLIPFLOP
Contextual Info: FEATURING Extended Commercial Temperature Range -20˚C to 70˚C for Portable Handheld Equipment ML4851 Low Current, Voltage Boost Regulator GENERAL DESCRIPTION FEATURES The ML4851 is a low power boost regulator designed for DC to DC conversion in 1 to 3 cell battery powered

Contextual Info: April 1997 MgLMicro Linear ML4851 Low Current, Voltage Boost Regulator GENERAL DESCRIPTION FEATURES The ML4851 is a low power boost regulator designed for D C to DC conversion in 1 to 3 cell battery powered systems. The maximum switching frequency can exceed