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    EPA680A Search Results

    EPA680A Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    EPA680A
    Excelics Semiconductor High Efficiency Heterojunction Power FET Original PDF 75.43KB 2
    EPA680A-180F
    Excelics Semiconductor 8-12V high efficiency heterojunction power FET Original PDF 24.92KB 2
    EPA680AV
    Excelics Semiconductor High Efficiency Heterojuction FETs Original PDF 68.41KB 3

    EPA680A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    EPA680A

    Contextual Info: Excelics EPA680A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +37.0dBm TYPICAL OUTPUT POWER 7.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 6800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION


    Original
    EPA680A 12GHz 180mA EPA680A PDF

    180MIL

    Contextual Info: EPA680AV-180F High Efficiency Heterojunction Power FET ISSUED 05/02/2006 FEATURES • • • • • • Non-Hermetic 180mil Metal Flange Package +36.5 dBm Typical Output Power 17.5 dB Typical Power Gain at 2GHz 0.4 x 6800 Micron Recessed “Mushroom” Gate


    Original
    EPA680AV-180F 180mil 175oC -65/175oC PDF

    EPA680A

    Abstract: EPA680AV
    Contextual Info: EPA680A/EPA680AV High Efficiency Heterojunction Power FET UPDATED 05/02/2006 1320 60 FEATURES • • • • • • D +36.5dBm TYPICAL OUTPUT POWER 6.5dB TYPICAL POWER GAIN FOR EPA680A AND 8.0dB FOR EPA680AV AT 12GHz 0.4 X 6800 MICRON RECESSED “MUSHROOM” GATE


    Original
    EPA680A/EPA680AV EPA680A EPA680AV 12GHz 160mA EPA680AV EPA680A PDF

    EPA680A-180F

    Contextual Info: Excelics EPA680A-180F PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET • • • • • • NON-HERMETIC 180MIL METAL FLANGE PACKAGE +37.5dBm TYPICAL OUTPUT POWER 17.5dB TYPICAL POWER GAIN AT 2GHz 0.4 X 6800 MICRON RECESSED “MUSHROOM” GATE


    Original
    EPA680A-180F 180MIL EPA680A-180F PDF

    EPA680A-180F

    Abstract: 180MIL DB-44
    Contextual Info: EPA680A-180F High Efficiency Heterojunction Power FET ISSUED 05/02/2006 FEATURES • • • • • • Non-Hermetic 180mil Metal Flange Package +36.5 dBm Typical Output Power 16.0 dB Typical Power Gain at 2GHz 0.4 x 6800 Micron Recessed “Mushroom” Gate


    Original
    EPA680A-180F 180mil 175oC -65/175oC EPA680A-180F DB-44 PDF

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original
    PDF