EPA120AV Search Results

EPA120AV Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
EPA120AV		Excelics Semiconductor	High Efficiency Heterojunction Power FET	Original	PDF	29.62KB	2
EPA120AV		Excelics Semiconductor	High Efficiency Heterojunction Power FET	Original	PDF	52.71KB	2

EPA120AV Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: EPA120A/EPA120AV High Efficiency Heterojunction Power FET • • • • • • +29.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN FOR EPA120A AND 10.5dB FOR EPA120AV AT 18GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE	Original	EPA120A/EPA120AV EPA120A EPA120AV 18GHz EPA120A	PDF
EPA120A Abstract: EPA120AV Contextual Info: Excelics EPA120A/EPA120AV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • +29.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN FOR EPA120A AND 10.5dB FOR EPA120AV AT 18GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION	Original	EPA120A/EPA120AV EPA120A EPA120AV 18GHz EPA120A 12GHz EPA120AV.	PDF
EPA080A-100P Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.	Original		PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: EPA120A/EPA120AV High Efficiency Heterojunction Power FET • • • • • • +29.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN FOR EPA120A AND 10.5dB FOR EPA120AV AT 18GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE

Original

EPA120A/EPA120AV EPA120A EPA120AV 18GHz EPA120A

PDF

EPA120A

Abstract: EPA120AV
Contextual Info: Excelics EPA120A/EPA120AV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • +29.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN FOR EPA120A AND 10.5dB FOR EPA120AV AT 18GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION

Original

EPA120A/EPA120AV EPA120A EPA120AV 18GHz EPA120A 12GHz EPA120AV.

PDF

EPA080A-100P

Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.

Original

PDF