EP 55 TRANSISTOR DATA SHEET Search Results

uster

Abstract: 1001-7R 140 Watt 110 Vdc square wave generator 2660-7R
Contextual Info: P Series Extended Data Sheet 100 - 195 Watt DC-DC Converters Input to output isolation 1, 2, 3 or 4 outputs Many combinations of the following output voltages are available: 3.3 V, 5.1 V, 12 V, 15 V and 24 V. Class I equipment • Extremely high efficiency

EP-603 power supply

Abstract: EP-613 power supply EP-613 EP 603 TR 505 tr 611 TR 610 tr 614 VS-507 EP-613 DC POWER SUPPLY
Contextual Info: Digital Deflection Controller SDA 9064-5 Preliminary Data NMOS IC Features ● Pipeline processor structure controls deflection stages ● Raster alignment by keyboard or automatically ● Adaptable beam current compensation for picture height and width ● Protection input stops the exceeding

wiring VDG 13 relay

Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
Contextual Info: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface

Contextual Info: 19-0657; Rev 6; 3/12 KIT ATION EVALU LE B A IL A AV Automotive Micropower Linear Regulators with Supervisor ♦ ♦ ♦ ♦ ♦ ♦ ♦ Ordering Information TEMP RANGE PART -40°C to +125°C 6 TDFN-EP* MAX6765TT_D_/V+ -40°C to +125°C 6 TDFN-EP* Ordering Information continued at end of data sheet.

MAX15006BASA

Abstract: MAX15006BATT MAX15007 T633-2
Contextual Info: 19-0663; Rev 0; 10/06 40V, Ultra-Low Quiescent-Current Linear Regulators in 6-Pin TDFN/8-Pin SO The MAX15006/MAX15007 ultra-low quiescent-current linear regulators are ideal for use in automotive and battery-operated systems. These devices operate from an input voltage of 4V to 40V, deliver up to 50mA of output current, and consume only 10µA of quiescent current at no load. The internal p-channel pass device

IC 290 8pin

Abstract: max15006batt 8-pin soic pcb footprint
Contextual Info: 19-0663; Rev 0; 10/06 40V, Ultra-Low Quiescent-Current Linear Regulators in 6-Pin TDFN/8-Pin SO The MAX15006/MAX15007 ultra-low quiescent-current linear regulators are ideal for use in automotive and battery-operated systems. These devices operate from an input voltage of 4V to 40V, deliver up to 50mA of output current, and consume only 10µA of quiescent current at no load. The internal p-channel pass device

AAT2430

Contextual Info: DATA SHEET AAT2491 Dual N-Channel HV Cascode-Clamp, Lateral TrenchDMOS Array Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT2491 is a monolithically integrated dual N-channel high-voltage cascode-clamp lateral TrenchDMOS array. The dual-channel AAT2491 monolithically integrates

vtc 365

Abstract: MAX3286 MAX3287 MAX3289 MAX3296 MAX3299 vmd 185 020 at
Contextual Info: 19-1550; Rev 6; 11/04 3.0V to 5.5V, 1.25Gbps/2.5Gbps LAN Laser Drivers PIN-PACKAGE MAX3286CTI+ 0°C to +70°C 28 Thin QFN 5mm x 5mm * MAX3286CGI 0°C to +70°C 28 QFN (5mm x 5mm)* MAX3286CHJ 0°C to +70°C 32 TQFP (5mm x 5mm) Ordering Information continued at end of data sheet.

MAX3286

Abstract: MAX3287 MAX3289 MAX3296 MAX3299
Contextual Info: 19-1550; Rev 6; 11/04 3.0V to 5.5V, 1.25Gbps/2.5Gbps LAN Laser Drivers PIN-PACKAGE MAX3286CTI+ 0°C to +70°C 28 Thin QFN 5mm x 5mm * MAX3286CGI 0°C to +70°C 28 QFN (5mm x 5mm)* MAX3286CHJ 0°C to +70°C 32 TQFP (5mm x 5mm) Ordering Information continued at end of data sheet.

max6627mka#tg16

Abstract: 2N3904 CMPT3904 MAX6627 MAX6628 MMBT3904 TG16 MAX6627MKA digital UPS circuit diagram
Contextual Info: 19-2032; Rev 5; 6/11 Remote ±1°C Accurate Digital Temperature Sensors with SPI-Compatible Serial Interface Features The MAX6627/MAX6628 precise digital temperature sensors report the temperature of a remote sensor. The remote sensor is a diode-connected transistor, typically

Contextual Info: 19-2032; Rev 5; 6/11 Remote ±1°C Accurate Digital Temperature Sensors with SPI-Compatible Serial Interface Features The MAX6627/MAX6628 precise digital temperature sensors report the temperature of a remote sensor. The remote sensor is a diode-connected transistor, typically

T491C

Abstract: AGR19030XF 100B100JCA500X AGR19030EF JESD22-C101A j598 SEMICONDUCTOR J598 W1235
Contextual Info: Preliminary Data Sheet June 2004 AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

AGR19030XF

Abstract: 100B100JCA500X AGR19030E AGR19030EF AGR19030EU JESD22-C101A
Contextual Info: Preliminary Data Sheet March 2004 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19030E is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

THERMISTORS SCK

Contextual Info: MAX6627/MAX6628 Remote ±1ºC Accurate Digital Temperature Sensors with SPI-Compatible Serial Interface General Description The MAX6627/MAX6628 precise digital temperature sensors report the temperature of a remote sensor. The remote sensor is a diode-connected transistor, typically

j561

Abstract: T491C AGR19030XF 100B100JCA500X AGR19030E AGR19030EF AGR19030EU JESD22-C101A 100B100 DSA0020680
Contextual Info: Preliminary Data Sheet April 2004 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19030E is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

transistor 7350

Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor z14 L
Contextual Info: Preliminary Data Sheet March 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

b93 02 diode

Abstract: 02 b93 diode ABG TRANSISTOR ACB SOT23-6 MAXIM AMP DIODE B93 DUAL NPN SOT23-6 MAX6471 MAX6474 MAX6477 MAX6479
Contextual Info: 19-2532; Rev 6; 2/11 KIT ATION EVALU E L B AVAILA 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit The MAX6469–MAX6484 are low-dropout linear regulators with a fully integrated microprocessor reset circuit. Each is available with preset output voltages from +1.5V

Contextual Info: 19-2532; Rev 6; 2/11 KIT ATION EVALU E L B AVAILA 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit Features The MAX6469–MAX6484 are low-dropout linear regulators with a fully integrated microprocessor reset circuit. Each is available with preset output voltages from +1.5V

AGR19045XF

Contextual Info: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

vmd 185 020 at

Abstract: MAX3286CTI T
Contextual Info: 19-1550; Rev 6; 11/04 3.0V to 5.5V, 1.25Gbps/2.5Gbps LAN Laser Drivers PIN-PACKAGE MAX3286CTI+ 0°C to +70°C 28 Thin QFN 5mm x 5mm * MAX3286CGI 0°C to +70°C 28 QFN (5mm x 5mm)* MAX3286CHJ 0°C to +70°C 32 TQFP (5mm x 5mm) Ordering Information continued at end of data sheet.

DUAL NPN SOT23-6

Abstract: MAX6469 MAX6471 MAX6474 MAX6476 MAX6477 MAX6479 MAX6482 MAX6484
Contextual Info: 19-2532; Rev 5; 12/07 KIT ATION EVALU LE B A IL A AV 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit Features The MAX6469–MAX6484 are low-dropout linear regulators with a fully integrated microprocessor reset circuit. Each is available with preset output voltages from +1.5V

transistor 7350

Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
Contextual Info: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

MB2141A

Abstract: MB89P485 MB90370 MBM27C256A X03427 t21c
Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM25-10151-2E F2MC-8L 8-BIT MICROCONTROLLER MB89480/480L Series HARDWARE MANUAL F2MC-8L 8-BIT MICROCONTROLLER MB89480/480L Series HARDWARE MANUAL Be sure to refer to the “Check Sheet” for the latest cautions on development.

6603 Shenzhen

Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor
Contextual Info: Preliminary Data Sheet April 2004 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for